Capacitive immunosensor based on grafted Anodic Aluminum Oxide for the detection of matrix metalloproteinase 9 found in chronic wounds.

Chronic wounds impose a significant burden on healthcare resources, society and more specifically on patients. Preliminary research showed that as of today, there is not a system that can do a precise monitoring of these wounds so that healthcare systems can manage them with efficiency. The overall aim of our project is to produce a capacitive sensor able to detect a specific molecule in chronic wounds, thus giving information concerning its inflammation state. In this article, we present a system that uses nanoporous Anodic Aluminum Oxide (AAO) grafted with a commercially available anti-MMP9 antibody able to interact with Matrix Metalloproteinase 9, an enzyme that works as an indicator of inflammation. In order to produce a proof-of-concept we chose to compare two methods of functionalization followed by a thorough analysis with biological, electrical and optical testing. This study produced reproducible results for each functionalization method, chemisorption being the best choice for the immobilization of conventional antibodies on AAO-based sensors for a detection of MMP9 in pure and complex conditions. This proof-of-concept and its analysis allowed a better understanding of the needs of the overall project and will be helpful to produce a prototype of smart dressing in the near future.

CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications.

Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBRAM based memory cell to be used as an RF switch, and to demonstrate the feasibility of programming non-volatile RF CBRAM switches to achieve specific target resistances within a range of continuous values. The memory-RF technologic transition implies a drastic increase of the geometry in order to handle a much higher power, a decrease of the transition capacitance in order to operate at much higher frequencies, and a decrease of the LRS to a few ohms, which is critical for RF applications. These studies are initially performed on an in-house made RF CBRAM cell array at DC frequency, and then extended successfully to a co-planar waveguide (CPW) based shunt mode RF switch with an integrated CBRAM cell. Reliability of the proposed technique is validated through detailed analysis of factors like repeatability of the process, time stability of programmed states, and statistics of time taken to converge to a desired resistance value for an arbitrary RF CBRAM switch.