3D-printed optical probes for wafer-level testing of photonic integrated circuits.

Wafer-level probing of photonic integrated circuits is key to reliable process control and efficient performance assessment in advanced production workflows. In recent years, optical probing of surface-coupled devices such as vertical-cavity lasers, top-illuminated photodiodes, or silicon photonic circuits with surface-emitting grating couplers has seen great progress. In contrast to that, wafer-level probing of edge-emitting devices with hard-to-access vertical facets at the sidewalls of deep-etched dicing trenches still represents a major challenge. In this paper, we address this challenge by introducing a novel concept of optical probes based on 3D-printed freeform coupling elements that fit into deep-etched dicing trenches on the wafer surface. Exploiting the design freedom and the precision of two-photon laser lithography, the coupling elements can be adapted to a wide variety of mode-field sizes. We experimentally demonstrate the viability of the approach by coupling light to edge-emitting waveguides on different integration platforms such as silicon photonics (SiP), silicon nitride (TriPleX), and indium phosphide (InP). Achieving losses down to 1.9 dB per coupling interface, we believe that 3D-printed coupling elements represent a key step towards highly reproducible wafer-level testing of edge-coupled photonic integrated circuits.

Low-loss, broadband and high fabrication tolerant vertically tapered optical couplers for monolithic integration of Si3N4 and polymer waveguides.

A low-loss, broadband and high fabrication tolerant optical coupler for the monolithic integration of Si3N4 and polymer waveguides is designed and experimentally demonstrated. The coupler is based on the adiabatic vertical tapering of the Si3N4 waveguides. Low-loss operation is experimentally verified at both 976 and 1460-1635 nm wavelengths. Measured losses per coupler are as low as 0.12 and 0.14 dB at 976 and 1550 nm, respectively, and below 0.2 dB at both wavelengths for lateral misalignments between the Si3N4 and polymer waveguides up to 1.0 µm.

Chip based common-path optical coherence tomography system with an on-chip microlens and multi-reference suppression algorithm.

We demonstrate an integrated optical probe including an on-chip microlens for a common-path swept-source optical coherence tomography system. This common-path design uses the end facet of the silicon oxynitride waveguide as the reference plane, thus eliminating the need of a space-consuming and dispersive on-chip loop reference arm, thereby obviating the need for dispersion compensation. The on-chip micro-ball lens eliminates the need of external optical elements for coupling the light between the chip and the sample. The use of this lens leads to a signal enhancement up to 37 dB compared to the chip without a lens. The light source, the common-path arm and the detector are connected by a symmetric Y junction having a wavelength independent splitting ratio (50/50) over a much larger bandwidth than can be obtained with a directional coupler. The signal-to-noise ratio of the system was measured to be 71 dB with 2.6 mW of power on a mirror sample at a distance of 0.3 mm from the waveguide end facet. Cross-sectional OCT images of a layered optical phantom sample are demonstrated with our system. A method, based on an extended Fourier-domain OCT model, for suppressing ghost images caused by additional parasitic reference planes is experimentally demonstrated.

Waveguide-coupled micro-ball lens array suitable for mass fabrication.

We demonstrate a fabrication procedure for the direct integration of micro-ball lenses on planar integrated optical channel waveguide chips with the aim to reduce the divergence of light that arises from the waveguide in both horizontal and vertical directions. Fabrication of the lenses is based on photoresist reflow which is a procedure that allows for the use of photolithography for careful alignment of the lenses with respect to the waveguides and enables mass production. We present in detail the design and fabrication procedures. Optical characterization of the fabricated micro-ball lenses demonstrates a good performance in terms of beam-size reduction and beam shape. The beam half divergence angle of 1544 nm light is reduced from 12.4 ° to 1.85 °.

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

Two-photon quantum interference in integrated multi-mode interference devices.

Multi-mode interference (MMI) devices fabricated in silicon oxynitride (SiON) with a refractive index contrast of 2.4% provide a highly compact and stable platform for multi-photon non-classical interference. MMI devices can introduce which-path information for photons propagating in the multi-mode section which can result in degradation of this non-classical interference. We theoretically derive the visibility of quantum interference of two photons injected in a MMI device and predict near unity visibility for compact SiON devices. We complement the theoretical results by experimentally demonstrating visibilities of up to 97.7% in 2×2 MMI devices without the requirement of narrow-band photons.

Observing fermionic statistics with photons in arbitrary processes.

Quantum mechanics defines two classes of particles-bosons and fermions-whose exchange statistics fundamentally dictate quantum dynamics. Here we develop a scheme that uses entanglement to directly observe the correlated detection statistics of any number of fermions in any physical process. This approach relies on sending each of the entangled particles through identical copies of the process and by controlling a single phase parameter in the entangled state, the correlated detection statistics can be continuously tuned between bosonic and fermionic statistics. We implement this scheme via two entangled photons shared across the polarisation modes of a single photonic chip to directly mimic the fermion, boson and intermediate behaviour of two-particles undergoing a continuous time quantum walk. The ability to simulate fermions with photons is likely to have applications for verifying boson scattering and for observing particle correlations in analogue simulation using any physical platform that can prepare the entangled state prescribed here.

Flat-focal-field integrated spectrometer using a field-flattening lens.

We present a new flat-focal-field arrayed-waveguide grating (AWG) design that utilizes an integrated field-flattening lens placed in the second star coupler. The effective index difference between slab and lens region is obtained by introducing a thin silicon nitride (SiN) layer to a silicon oxynitride environment. Depending upon the SiN layer position, two different lens designs are implemented. As a proof of concept two 81-channel AWGs, one with and one without the lens, are designed, fabricated, and characterized for each lens design. The measurements show that the adjacent crosstalk at the peripheral channels is improved by 2 dB, an improvement which is predicted to become more pronounced for AWGs with higher number of output waveguides (e.g., ~16 dB for 200 output waveguides). Only 0.4 dB of extra excess loss is introduced by the lens.

Improved arrayed-waveguide-grating layout avoiding systematic phase errors.

We present a detailed description of an improved arrayed-waveguide-grating (AWG) layout for both, low and high diffraction orders. The novel layout presents identical bends across the entire array; in this way systematic phase errors arising from different bends that are inherent to conventional AWG designs are completely eliminated. In addition, for high-order AWGs our design results in more than 50% reduction of the occupied area on the wafer. We present an experimental characterization of a low-order device fabricated according to this geometry. The device has a resolution of 5.5 nm, low intrinsic losses (< 2 dB) in the wavelength region of interest for the application, and is polarization insensitive over a wide spectral range of 215 nm.

Spectral domain optical coherence tomography imaging with an integrated optics spectrometer.

We designed and fabricated an arrayed-waveguide grating (AWG) in silicon oxynitride as a spectrometer for spectral domain optical coherence tomography (SD-OCT). The AWG has a footprint of only 3.0 cm × 2.5 cm, operates at a center wavelength of 1300 nm, and has 78 nm free spectral range. OCT measurements are performed that demonstrate imaging up to a maximum depth of 1 mm with an axial resolution of 19 µm, both in agreement with the AWG design parameters. Using the AWG spectrometer combined with a fiber-based SD-OCT system, we demonstrate cross-sectional OCT imaging of a multilayered scattering phantom.

Efficiency of integrated waveguide probes for the detection of light backscattered from weakly scattering media.

A semianalytical model for light collection by integrated waveguide probes is developed by extending previous models used to describe fiber probes. The efficiency of waveguide probes is compared to that of different types of fiber probes for different thicknesses of a weakly scattering sample. The simulation results show that integrated probes have a collection efficiency that is higher than that of small-core fiber probes, and, in the particular case of thin samples, also exceeds the collection efficiency of large-core highly multimode fiber probes. An integrated waveguide probe with one excitation and eight collector waveguides is fabricated and applied to excite and collect luminescence from a ruby rod. The experimental results are in good agreement with the simulation and validate the semianalytical model.

High-power, broadly tunable, and low-quantum-defect KGd(1-x)Lu(x)(WO(4))(2):Yb(3+) channel waveguide lasers.

In KGd(1-x)Lu(x)(WO(4))(2):Yb(3+) channel waveguides grown onto KY(WO(4))(2) substrates by liquid phase epitaxy and microstructured by Ar+ beam etching, we produced 418 mW of continuous-wave output power at 1023 nm with a slope efficiency of 71% and a threshold of 40 mW of launched pump power at 981 nm. The degree of output coupling was 70%. By grating tuning in an extended cavity and pumping at 930 nm, we demonstrated laser operation from 980 nm to 1045 nm. When pumping at 973 nm, lasing at 980 nm with a record-low quantum defect of 0.7% was achieved.

Quantum walks of correlated photons.

Quantum walks of correlated particles offer the possibility of studying large-scale quantum interference; simulating biological, chemical, and physical systems; and providing a route to universal quantum computation. We have demonstrated quantum walks of two identical photons in an array of 21 continuously evanescently coupled waveguides in a SiO(x)N(y) chip. We observed quantum correlations, violating a classical limit by 76 standard deviations, and found that the correlations depended critically on the input state of the quantum walk. These results present a powerful approach to achieving quantum walks with correlated particles to encode information in an exponentially larger state space.

Integrated approach to laser delivery and confocal signal detection.

We present an on-chip arrayed waveguide grating (AWG) sensor based on the confocal arrangement of two AWGs, one acting as focusing illuminator and one as signal collector. The chip can be close to, or in direct contact with, a sample, e.g., biological tissue, without the need of external optics. The collection efficiency of our device can be more than 1 order of magnitude higher than that of a standard AWG, in which light is collected by one input channel. Experimental results on the collection efficiency and volume are presented, together with a demonstration of multiwavelength imaging.

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon.

Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence.

Monocrystalline Yb(3+):(Gd,Lu)(2)O(3) channel waveguide laser at 976.8 nm.

We report on a Yb(3+)-doped sesquioxide waveguide laser based on a lattice-matched Yb(3+)(3%):(Gd,Lu)(2)O(3) film that has been epitaxially grown on Y(2)O(3) using pulsed laser deposition. Rib-channel waveguides have been structured by reactive ion etching. Laser emission at 976.8 nm was observed under pumping with a Ti(3+):Al(2)O(3) laser at 905 nm. A laser threshold of 17 mW and a slope efficiency of 6.7% have been achieved with respect to input power. For an incident pump power of 200 mW, a maximum output power of 12 mW could be realized.

Low threshold monocrystalline Nd:(Gd, Lu)2O3 channel waveguide laser.

We report the first waveguide laser based on a rare-earth-doped sesquioxide. A 2 microm thick lattice matched Nd(0.5%):(Gd, Lu)(2)O(3) film with a nearly atomically flat surface has been epitaxially grown on a Y(2)O(3) substrate, using pulsed laser deposition. The film has been structured with reactive ion etching and a rib channel waveguide laser has been realized. Laser radiation at 1075 nm and 1079 nm has been observed under 820-nm pumping. The laser possesses a threshold power of about 0.8 mW and a preliminary slope efficiency of 0.5% versus incident pump power. A maximum output power of 1.8 mW has been obtained for 370 mW incident pump power.