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Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2 Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2 Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2 Sb. First-principles calculations reveal that the formation of SnP3 on Cu2 Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.
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On-site diagnostic tests that accurately identify disease biomarkers lay the foundation for self-healthcare applications. However, these tests routinely rely on single-mode signals and suffer from insufficient accuracy, especially for multiplexed point-of-care tests (POCTs) within a few minutes. Here, this work develops a dual-mode multiclassification diagnostic platform that integrates an electrochemiluminescence sensor and a field-effect transistor sensor in a microfluidic chip. The microfluidic channel guides the testing samples to flow across electro-optical sensor units, which produce dual-mode readouts by detecting infectious biomarkers of tuberculosis (TB), human rhinovirus (HRV), and group B streptococcus (GBS). Then, machine-learning classifiers generate three-dimensional (3D) hyperplanes to diagnose different diseases. Dual-mode readouts derived from distinct mechanisms enhance the anti-interference ability physically, and machine-learning-aided diagnosis in high-dimensional space reduces the occasional inaccuracy mathematically. Clinical validation studies with 501 unprocessed samples indicate that the platform has an accuracy approaching 99%, higher than the 77%-93% accuracy of rapid point-of-care testing technologies at 100% statistical power (>150 clinical tests). Moreover, the diagnosis time is 5 min without a trade-off of accuracy. This work solves the occasional inaccuracy issue of rapid on-site diagnosis, endowing POCT systems with the same accuracy as laboratory tests and holding unique prospects for complicated scenes of personalized healthcare.
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Sistemas de Atención de Punto , Pruebas en el Punto de Atención , Humanos , Microfluídica , BiomarcadoresRESUMEN
"Test-and-go" single-nucleotide variation (SNV) detection within several minutes remains challenging, especially in low-abundance samples, since existing methods face a trade-off between sensitivity and testing speed. Sensitive detection usually relies on complex and time-consuming nucleic acid amplification or sequencing. Here, a graphene field-effect transistor (GFET) platform mediated by Argonaute protein that enables rapid, sensitive, and specific SNV detection is developed. The Argonaute protein provides a nanoscale binding channel to preorganize the DNA probe, accelerating target binding and rapidly recognizing SNVs with single-nucleotide resolution in unamplified tumor-associated microRNA, circulating tumor DNA, virus RNA, and reverse transcribed cDNA when a mismatch occurs in the seed region. An integrated microchip simultaneously detects multiple SNVs in agreement with sequencing results within 5 min, achieving the fastest SNV detection in a "test-and-go" manner without the requirement of nucleic acid extraction, reverse transcription, and amplification.
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Técnicas Biosensibles , MicroARNs , Nucleótidos , Proteínas Argonautas , ADN/genética , MicroARNs/genética , Sondas de ADNRESUMEN
Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.
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Precision chemistry demands miniaturized catalytic systems for sophisticated reactions with well-defined pathways. An ideal solution is to construct a nanoreactor system functioning as a chemistry laboratory to execute a full chemical process with molecular precision. However, existing nanoscale catalytic systems fail to in situ control reaction kinetics in a closed-loop manner, lacking the precision toward ultimate reaction efficiency. We find an inter-electrochemical gating effect when operating DNA framework-constructed enzyme cascade nanoreactors on a transistor, enabling in situ closed-loop reaction monitoring and modulation electrically. Therefore, a comprehensive system is developed, encapsulating nanoreactors, analyzers, and modulators, where the gate potential modulates enzyme activity and switches cascade reaction "ON" or "OFF." Such electric field-effect property enhances catalytic efficiency of enzyme by 343.4-fold and enables sensitive sarcosine assay for prostate cancer diagnoses, with a limit of detection five orders of magnitude lower than methodologies in clinical laboratory. By coupling with solid-state electronics, this work provides a perspective to construct intelligent nano-systems for precision chemistry.
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Bioensayo , Electricidad , Masculino , Humanos , Catálisis , Inteligencia , NanotecnologíaRESUMEN
The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry. Employing the so-called "golden rule of three", here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where the twist angles between graphene and top/bottom hBN are both close to zero. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~ 0.2°. Finally, we extend our technique to low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.
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Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching1,2. Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer3, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic sp orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.
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The chemical bond is of central interest in chemistry, and it is of significance to study the nature of intermolecular bonds in real-space. Herein, non-contact atomic force microscopy (nc-AFM) and low-temperature scanning tunneling microscopy (LT-STM) are employed to acquire real-space atomic information of molecular clusters, i.e., monomer, dimer, trimer, tetramer, formed on Au(111). The formation of the various molecular clusters is due to the diversity of halogen bonds. DFT calculation also suggests the formation of three distinct halogen bonds among the molecular clusters, which originates from the noncovalent interactions of Br-atoms with the positive potential H-atoms, neutral potential Br-atoms, and negative potential N-atoms, respectively. This work demonstrates the real-space investigation of the multiple halogen bonds by nc-AFM/LT-STM, indicating the potential use of this technique to study other intermolecular bonds and to understand complex supramolecular assemblies at the atomic/sub-molecular level.
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Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics, but is fundamentally limited by Coulomb's law. Achieving this objective is challenging, due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy. Here, using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations, we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi. We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior. Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors, and opens new opportunities for developing quantum devices with charge-based quantum states.
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Anisotropy in crystals usually has remarkable consequences in two-dimensional (2D) materials, for example, black phosphorus, PdSe2, and SnS, arising from different lattice periodicities along different crystallographic directions. Electrical anisotropy has been successfully demonstrated in 2D materials, but anisotropic magnetoresistance in 2D materials is rarely studied. Herein, we report anisotropic magnetoresistance in layered nonmagnetic semiconducting PdSe2 flakes. Anisotropic magnetoresistance along the two crystalline axes under a perpendicular magnetic field is demonstrated, and the magnetoresistance along the a-axis is apparently different from the magnetoresistance along the b-axis. The magnetoresistance can also be flexibly tuned by applying a gate voltage, leveraging the semiconductor properties of PdSe2. The computed anisotropic electronic density of states and electronic mobility with ab initio density functional calculations support the anisotropic and measured magnetoresistance. Our findings advance the understanding of magnetoresistance in anisotropic transition-metal dichalcogenides and pave the way for potential applications in anisotropic spintronic devices.
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Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-speed optical modulators due to its large Pockels effect. Another material, barium titanate, nominally has a 50 times stronger r-parameter and would ordinarily be a more attractive material choice for such modulators or other applications. In practice, barium titanate thin films for optical waveguide devices are usually grown on magnesium oxide due to its low refractive index, allowing vertical mode confinement. However, the crystal quality is normally degraded. Here, a group of scandate-based substrates with small lattice mismatch and low refractive index compared to that of barium titanate is identified, thus concurrently satisfying high crystal quality and vertical optical mode confinement. This work provides a platform for nonlinear on-chip optoelectronics and can be promising for waveguide-based optical devices such as Mach-Zehnder modulators, wavelength division multiplexing, and quantum optics-on-chip.
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Hybrid energy-harvesting systems that capture both wave and solar energy from the oceans using triboelectric nanogenerators and photovoltaic cells are promising renewable energy solutions. However, ubiquitous shadows cast from moving objects in these systems are undesirable as they degrade the performance of the photovoltaic cells. Here we report a shadow-tribo-effect nanogenerator that hybrids tribo-effect and shadow-effect together to overcome this issue. Several fiber-supercapacitors are integrated with the shadow-tribo-effect nanogenerator to form a self-charging power system. To capture and store wave/solar energy from oceans, an energy ball based on the self-charging power system is demonstrated. By harnessing the shadow-effect, i.e. the shadow of the moving object in the energy ball, the charging time shortens to 253.3 s to charge the fiber-supercapacitors to the same voltage (0.3 V) as using pure tribo-effect. This cost-effective method to harvest and store the wave/solar energy from the oceans in this work is expected to inspire next-generation large-scale blue energy harvesting.
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Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La0.66Sr0.33MnO3 (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.
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Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, a room-temperature colossal MR of up to 5000% at 9 T is reported in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 -terminated SrTiO3 , a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈1012 cm-2 . Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.
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Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus-like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.
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Traditional methods to prepare two-dimensional (2D) B-C-N ternary materials (BCxN), such as chemical vapor deposition (CVD), require sophisticated experimental conditions such as high temperature, delicate control of precursors, and postgrowth transfer from catalytic substrates, and the products are generally thick or bulky films without the atomically mixed phase of B-C-N, hampering practical applications of these materials. Here, for the first time, we develop a temperature-dependent plasma-enhanced chemical vapor deposition (PECVD) method to grow 2D BCxN materials directly on noncatalytic dielectrics at low temperature with high controllability. The C, N, and B compositions can be tuned by simply changing the growth temperature. Thus, the properties of the as-made materials including band gap and conductivity are modulated, which is hardly achieved by other methods. A 2D hybridized BC2N film with a mixed BC2N phase is produced, for the first time, with a band gap of about 2.3 eV. The growth temperature is 580-620 °C, much lower than that of traditional catalytic CVD for growing BCxN. The product has a p-type conducting property and can be directly applied in field-effect transistors and sensors without postgrowth transfer, showing great promise for this method in future applications.
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The growing demand for tailored nonlinearity calls for a structure with unusual phase discontinuity that allows the realization of nonlinear optical chirality, holographic imaging, and nonlinear wavefront control. Transition-metal dichalcogenide (TMDC) monolayers offer giant optical nonlinearity within a few-angstrom thickness, but limitations in optical absorption and domain size impose restriction on wavefront control of nonlinear emissions using classical light sources. In contrast, noble metal-based plasmonic nanosieves support giant field enhancements and precise nonlinear phase control, with hundred-nanometer pixel-level resolution; however, they suffer from intrinsically weak nonlinear susceptibility. Here, we report a multifunctional nonlinear interface by integrating TMDC monolayers with plasmonic nanosieves, yielding drastically different nonlinear functionalities that cannot be accessed by either constituent. Such a hybrid nonlinear interface allows second-harmonic (SH) orbital angular momentum (OAM) generation, beam steering, versatile polarization control, and holograms, with an effective SH nonlinearity χ (2) of ~25 nm/V. This designer platform synergizes the TMDC monolayer and plasmonic nanosieves to empower tunable geometric phases and large field enhancement, paving the way toward multifunctional and ultracompact nonlinear optical devices.
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A controllable electronic manipulation in a frustrated magnetic system such as solution-based two-dimensional (2D) all-inorganic perovskites offers a possible route for their integrations with electronic and magnetic devices for their advanced applications. Here, we perform element-specific investigations of an emergent class of quasi-2D all-inorganic perovskites Cs2CuCl4-xBrx with (0 ≤ x ≤ 4) using a combination of synchrotron-radiation photoelectron techniques. Surface- and element-sensitive X-ray absorption spectroscopy spectra of Cu L2,3 edges indicate strong electronic transition that is largely influenced by their halogen content at room temperature. This implies that site-selective occupation largely dominates the electronic transition across the unoccupied states of these series since chlorine atoms possess a stronger electronegative character than bromine atoms. Moreover, the implication of halogen site is reflected in the valence band of Cl-rich copper perovskite in which the valence band edge is closer to Fermi energy (EF) than that of the Br-rich compound. Furthermore, X-ray magnetic circular dichroism spectra of mixed ratio and Br-rich compounds exhibit antiferromagnetism at room temperature. These site-specific magnetic-spectroscopic results are corroborated by density functional theory calculations. The strong electronic modulation and the local magnetic spectroscopy results in these solution-based and low-temperature-growth materials will pave the way toward energy- and cost-efficient perovskite devices.
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Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (T C) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their T C, particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-T C 2D FM Fe3GeTe2 (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS)n, where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that T C of 4-layer Fe3GeTe2 can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the T C enhancement of the Fe3GeTe2 films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, T C can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices.
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The metal-insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO3 ultrathin films is reported. Uniform and effective termination engineering at the SrRuO3 (001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO2 , a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO3 monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.