Ultra-Broad-Band-Excitable Cu-Based Halide (C4H10N)4Cu4I8 with High Stability for LED Applications.

Currently, organic-inorganic hybrid cuprous-based halides are receiving substantial attention for their eco-friendliness, distinctive structures, and outstanding photophysical properties. Nevertheless, most of the reported cuprous-based halides demand deep ultraviolet excitation with a narrow excitation range that can meet the commercial requirement. Herein, zero-dimensional (0D) cuprous-based halide (C4H10N)4Cu4I8 single crystals (SCs) were synthesized, with an ultrabroad band excitation ranging 260-450 nm and a greenish-yellow emission band peaking at 560 nm. Excitingly, (C4H10N)4Cu4I8 also features a large Stokes shift of 300 nm, a high photoluminescence quantum yield (PLQY) of up to 84.66%, and a long lifetime of 137 µs. Furthermore, density functional theory calculations were performed to explore the relationship between structure and photophysical properties, and the photoluminescence performance of (C4H10N)4Cu4I8 originates from the electron interactions in [Cu2I4]2- clusters. Taking advantage of broad band excitation and excellent photoluminescent performances, a high luminescence characteristic UV-pumped light-emitting diode (LED) device with remarkable color stability was fabricated by employing the as-synthesized (C4H10N)4Cu4I8 SCs, which present the promising applications of low-dimensional cuprous-based halides in solid-state lighting.

Temperature-Induced Reversible Photoluminescence Switching and Ultraviolet-Pumped Light-Emitting Diode Applications of a Perovskite (C6H10N2)2MnCl6·2H2O Crystal.

Zero-dimensional (0D) organic-inorganic hybrid halides present many fascinating photophysical properties for promising optoelectronic applications such as light-emitting diodes (LEDs), X-ray imaging, photodetectors, and anticounterfeiting. Herein, a centimeter-sized single crystal (C6H10N2)2MnCl6·2H2O with a 0D perovskite structure was obtained via a solvent evaporation method. A bright red emission at 618 nm with a larger Stokes shift of more than 300 nm and a long fluorescence lifetime of 6.21 ms were measured. Notably, a reversible PL switching from red emission to nonluminescence has been presented in the cycles of heating-cooling processes from RT to 100 °C. Furthermore, the temperature-induced luminescence shows a quick recovery after 20 conversion cycles, exhibiting excellent stability and temperature sensing. According to the structural and theoretical analyses, the temperature-induced luminescence is primarily due to hydrogen-bonding interactions between (MnCl6)4- and H2O molecules. Particularly, a temperature anticounterfeiting application has been designed based on its reversible temperature-dependent PL switching. Importantly, the ultraviolet-pumped LEDs fabricated by (C6H10N2)2MnCl6·2H2O single crystals are perfectly achieved. Anyway, this work clearly demonstrates that 0D Mn-based perovskite with temperature-dependent PL switching greatly extends its potential applications in electro-optical display, temperature sensing, and anticounterfeiting devices.

Examining the change of half-period voltage in longitudinal electro-optic modulation and residual stress of potassium dihydrogen phosphate crystal.

In this paper, the voltage-transmittance curvesKDP crystals were measured accurately between two crossed or parallel polarizers using longitudinal electro-optic effect. The end faces of rectangular KDP samples were coated with ring-shaped electrodes using conductive silver paint (CSP). The change of half period voltage U i has been investigated. A method for quantitative characterization of residual stress has been proposed, based on deviation voltage U d. The results demonstrate that loading voltage is close to the integration of electric field intensity in crystal along the optical path when the CSP ring electrodes have a large outer radius R, small inner radius r, and long-distance d. The half-period voltage U i is also close to longitudinal half-wave voltage U π in these circumstances. The unclamped electro-optic coefficient γ63σ of KDP crystal at room temperature was measured as 10.24±0.05p m/V at the wavelength of 632.8 nm.

Study on burgers vector of dislocations in KDP (010) faces and screw dislocation growth mechanism of (101) faces.

We modified the conventional etching-optical method to measure dislocation direction in a KDP crystal. As burgers vector of dislocation in the KDP crystal must match the minimum periodic vector of the crystal lattice, we suggest that dislocations with a burgers vector of [101], [102] and [103] exist. Atomic force microscopy was employed to characterize the morphology of growth spirals on the hillock of (101) faces. Multi-spirals consisting of more than two element steps with a height of 0.5 nm which is equal to (101) face interplanar distances were observed. We propose the multi-spiral structure is determined by the burgers vector of the corresponding dislocation, and constructed a geometric model of the crystal with screw dislocation to derive the relationship. Growth spirals on the (101) face present a particular triangular morphology and we proved that the triangle structure is formed by connected steps in the 1/2[111] and [010] direction. Micropipes form when the magnitude of the dislocation's burgers vector exceeds 1 nm, as predicted by BCF theory. Interaction between dislocations was observed also.

Study on the thermal stress evolution in large scale KDP crystals during the crystal extraction process.

Transient numerical calculations were carried out to predict the evolution of temperature and thermal stress in traditionally grown large-size KDP crystals during the removal process, considering two methods that are used to accomplish the crystal extraction. The influence of the crystal size and the difference of temperature between the crystal and environment on the stresses inside the KDP crystals were also investigated in detail. Results indicate that, in both processes of isolating crystals, the highest stress transfers from the crystal periphery to the internal part from the early to the later time stage. In the case of extracting the crystal from solution directly after crystallization and exposing to air, the maximum stress at the crystal periphery is larger than that inside the crystal, and the probability of failure from the outside surface of crystals is large. In the case of retaining the solution for a time after crystallization, the maximum stress in the crystal internal region is larger than that of the crystal surface, leading to a large possibility to originate cracks in the inner region. Both increased crystal sizes and increased temperature differences between the crystals and the environment at the end of crystal growth are factors which aggravate crystal cracking. The maximum stress in crystals in the case of retaining the solution is less than that in the case of extracting the solution, which brings about a decreased likelihood of cracking. Thus, retaining solution for a period of time after the growth is completed, such as 96 h, is suggested to be adopted to accomplish successful crystal extraction.