RESUMEN
Chip-scale optical devices operated at wavelengths shorter than communication wavelengths, such as LiDAR for autonomous driving, bio-sensing, and quantum computation, have been developed in the field of photonics. In data processing involving optical devices, modulators are indispensable for the conversion of electronic signals into optical signals. However, existing modulators have a high half-wave voltage-length product (VπL) which is not sufficient at wavelengths below 1000 nm. Herein, we developed a significantly efficient optical modulator which has low VπL of 0.52 V·cm at λ = 640 nm using an electro-optic (EO) polymer, with a high glass transition temperature (Tg = 164 °C) and low optical absorption loss (2.6 dB/cm) at λ = 640 nm. This modulator is not only more efficient than any EO-polymer modulator reported thus far, but can also enable ultra-high-speed data communication and light manipulation for optical platforms operating in the ranges of visible and below 1000 nm infrared.
RESUMEN
We analyzed two types of Mach-Zehnder plasmonic modulators on a silicon-on-insulator platform with a different furan-thiophene chromophore electro-optic polymer to compare to other reports. The metal-taper coupling structure and the metal-insulator-metal cross section in our design have been optimized based on the new material parameters. According to the simulation result, a modulator with a slot width of 50 nm and an on-off voltage of Vπ=20 V can be 21 µm long, leading to a total modulator loss of 15 dB, which is comparable to previously reported devices.
