RESUMEN
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications wavelengths. Here, we report the first monolithically integrated avalanche photodetector (APD) for visible light. Our devices are based on a doped silicon rib waveguide with a novel end-fire input coupling to a silicon nitride waveguide. We demonstrate a high gain-bandwidth product of 234 ± 25 GHz at 20 V reverse bias measured for 685 nm input light, with a low dark current of 0.12 µA. We also observe open eye diagrams at up to 56 Gbps. This performance is very competitive when benchmarked against other integrated APDs operating in the infrared range. With CMOS-compatible fabrication and integrability with silicon photonic platforms, our devices are attractive for sensing, imaging, communications, and quantum applications at visible wavelengths.
RESUMEN
Coherent optical fiber networks are extremely sensitive to thermal, mechanical, and acoustic noise, which requires elaborate schemes of phase stabilization with dedicated auxiliary lasers, multiplexers, and photodetectors. This is particularly demanding in quantum networks operating at the single-photon level. Here, we propose a simple method of phase stabilization based on single-photon counting and apply it to quantum fiber networks implementing single-photon interference on a lossless beamsplitter and coherent perfect absorption on a metamaterial absorber. As a proof of principle, we show dissipative single-photon switching with visibility close to 80%. This method can be employed in quantum networks of greater complexity without classical stabilization rigs, potentially increasing efficiency of the quantum channels.
RESUMEN
Integrated photonics platforms are crucial to the development and implementation of scalable quantum information and networking schemes, but many such devices still rely on external bulk photodetectors. We report the design and simulation of a waveguide-based single-photon avalanche diode (SPAD) for visible wavelengths. The SPAD consists of a p-n junction implemented in a doped silicon waveguide, which is end-fire coupled to an input silicon nitride waveguide. We developed a 2D Monte Carlo model to simulate the avalanche multiplication process of charge carriers following the absorption of an input photon, and calculated the photon detection efficiency (PDE) and timing jitter of the SPAD. We investigated the SPAD performance at a wavelength of 640 nm and temperature of 243K for different device dimensions and device doping configurations. For our simulated parameters, we obtained a maximum PDE of 0.45 at a reverse bias voltage of ~20 V, and full-width-half-max (FWHM) timing jitter values <8 ps.