Tunable pyroelectric properties of barium strontium titanate thin films.

We studied the influence of the induced strain and applied electric field on the ground state of ferroelectric Ba0.7Sr0.3TiO3 thin films, deposited on the cubic (0 0 1) substrate. The dependence of the pyroelectric coefficient on the applied field is calculated for the different values of the induced strain. We found that tuning of the misfit strain in the film under the dielectric bolometer mode by the proper selection of substrate makes it possible to create the structures with very large values of the pyroelectric coefficient.

Phenomenological theory of uniaxial relaxor ferroelectrics.

A phenomenological thermodynamic theory of uniaxial relaxor strontium barium niobate [Formula: see text] is developed using the Landau-Devonshire approach with two order parameters. The fourth-order thermodynamic potential allowed to explain the shape of the polarization hysteresis loops experimentally observed at different temperatures. We show that the broad maximum of the dielectric permittivity is not related to the phase transition and arise due to the coupling between polarization and true order parameter which has antiferroelectric nature. We found that the phase transition temperature is much higher than the maximum of the dielectric permittivity and very likely corresponds to so-called Burn's temperature. True order parameter has no simple relation with polar modes.

Strain engineering of perovskite thin films using a single substrate.

Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba0.8Sr0.2)TiO3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs.

Experimental evidence of a mechanical coupling between layers in an individual double-walled carbon nanotube.

We perform transmission electron microscopy, electron diffraction, and Raman scattering experiments on an individual suspended double-walled carbon nanotube (DWCNT). The first two techniques allow the unambiguous determination of the DWCNT structure: (12,8)@(16,14). However, the low-frequency features in the Raman spectra cannot be connected to the derived layer diameters d by means of the 1/d power law, widely used for the diameter dependence of the radial-breathing mode of single-walled nanotubes. We discuss this disagreement in terms of mechanical coupling between the layers of the DWCNT, which results in collective vibrational modes. Theoretical predictions for the breathing-like modes of the DWCNT, originating from the radial-breathing modes of the layers, are in a very good agreement with the observed Raman spectra. Moreover, the mechanical coupling qualitatively explains the observation of Raman lines of breathing-like modes, whenever only one of the layers is in resonance with the laser energy.

Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate.

A Nd-doped BiFeO(3) thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45° with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism.