Chip-scale optical frequency combs enable the generation of highly-coherent pulsed light at gigahertz-level repetition rates, with potential technological impact ranging from telecommunications to sensing and spectroscopy. In combination with techniques such as dual-comb spectroscopy, their utilization would be particularly beneficial for sensing of molecular species in the mid-infrared spectrum, in an integrated fashion. However, few demonstrations of direct microcomb generation within this spectral region have been showcased so far. In this work, we report the generation of Kerr soliton microcombs in silicon nitride integrated photonics. Leveraging a high-Q silicon nitride microresonator, our device achieves soliton generation under milliwatt-level pumping at 1.97 µm, with a generated spectrum encompassing a 422 nm bandwidth and extending up to 2.25 µm. The use of a dual pumping scheme allows reliable access to several comb states, including primary combs, modulation instability combs, as well as multi- and single-soliton states, the latter exhibiting high stability and low phase noise. Our work extends the domain of silicon nitride based Kerr microcombs towards the mid-infrared using accessible factory-grade technology and lays the foundations for the realization of fully integrated mid-infrared comb sources.
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
Nonlinear optical signal processing (NOSP) has the potential to significantly improve the throughput, flexibility, and cost-efficiency of optical communication networks by exploiting the intrinsically ultrafast optical nonlinear wave mixing. It can support digital signal processing speeds of up to terabits per second, far exceeding the line rate of the electronic counterpart. In NOSP, high-intensity light fields are used to generate nonlinear optical responses, which can be used to process optical signals. Great efforts have been devoted to developing new materials and structures for NOSP. However, one of the challenges in implementing NOSP is the requirement of high-intensity light fields, which is difficult to generate and maintain. This has been a major roadblock to realize practical NOSP systems for high-speed, high-capacity optical communications. Here, we propose using a parity-time (PT) symmetric microresonator system to significantly enhance the light intensity and support high-speed operation by relieving the bandwidth-efficiency limit imposed on conventional single resonator systems. The design concept is the co-existence of a PT symmetry broken regime for a narrow-linewidth pump wave and near-exceptional point operation for broadband signal and idler waves. This enables us to achieve a new NOSP system with two orders of magnitude improvement in efficiency compared to a single resonator. With a highly nonlinear AlGaAs-on-Insulator platform, we demonstrate an NOSP at a data rate approaching 40 gigabits per second with a record low pump power of one milliwatt. These findings pave the way for the development of fully chip-scale NOSP devices with pump light sources integrated together, potentially leading to a wide range of applications in optical communication networks and classical or quantum computation. The combination of PT symmetry and NOSP may also open up opportunities for amplification, detection, and sensing, where response speed and efficiency are equally important. Supplementary Information: The online version contains supplementary material available at 10.1186/s43593-024-00062-w.
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80â µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
Microscopic single-mode lasers with low power consumption, large modulation bandwidth, and ultra-narrow linewidth are essential for numerous applications, such as on-chip photonic networks. A recently demonstrated microlaser using an optical Fano resonance between a discrete mode and a continuum of modes to form one of the mirrors, i.e., the so-called Fano laser, holds great promise for meeting these requirements. Here, we suggest and experimentally demonstrate what we believe is a new configuration of the Fano laser based on a nanobeam geometry. Compared to the conventional two-dimensional photonic crystal geometry, the nanobeam structure makes it easier to engineer the phase-matching condition that facilitates the realization of a bound-state-in-the-continuum (BIC). We investigate the laser threshold in two scenarios based on the new nanobeam geometry. In the first, classical case, the gain is spatially located in the part of the cavity that supports a continuum of modes. In the second case, instead, the gain is located in the region that supports a discrete mode. We find that the laser threshold for the second case can be significantly reduced compared to the conventional Fano laser. These results pave the way for the practical realization of high-performance microlasers.
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g(2)(0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
Microelectromechanical system (MEMS) vertical cavity surface-emitting lasers (VCSELs) are the fastest coherently tunable lasers (nm/ns) due to their unique Doppler-assisted tuning mechanism. However, in standard electrostatic actuation, the response is highly nonlinear and large (>100 V) dynamic voltages are needed for MHz sweep rates. We present a bidirectional MEMS VCSEL as a solution to these challenges where static voltages can be used to enable substantially linear and amplified wavelength tuning with respect to the fast tuning (MEMS) voltage. Using an InP/SOI MEMS bonded structure, we show a tuning range of 54.5 nm (gain limited) centered around 1586 nm at an actuation frequency of 2.73 MHz.
We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.
Phase and frequency noise originating from thermal fluctuations is commonly a limiting factor in integrated photonic cavities. To reduce this noise, one may drive a secondary "servo/cooling" laser into the blue side of a cavity resonance. Temperature fluctuations which shift the resonance will then change the amount of servo/cooling laser power absorbed by the device as the laser moves relatively out of or into the resonance, and thereby effectively compensate for the fluctuation. In this paper, we use a low noise laser to demonstrate this principle for the first time in a frequency comb generated from a normal dispersion photonic molecule micro-resonator. Significantly, this configuration can be used with the servo/cooling laser power above the usual nonlinearity threshold since resonances with normal dispersion are available. We report a 50 % reduction in frequency noise of the comb lines in the frequency range of 10 kHz to 1 MHz and investigate the effect of the secondary servo/cooling noise on the comb.
We report on our study of optical losses due to sub-band-gap absorption in AlGaAs-on-Insulator photonic nano-waveguides. Via numerical simulations and optical pump-probe measurements, we find that there is significant free carrier capture and release by defect states. Our measurements of the absorption of these defects point to the prevalence of the well-studied EL2 defect, which forms near oxidized (Al)GaAs surfaces. We couple our experimental data with numerical and analytical models to extract important parameters related to surface states, namely the coefficients of absorption, surface trap density and free carrier lifetime.
Wavelength tunable lasers with narrow dynamic linewidths are essential in many applications, such as optical coherence tomography and LiDAR. In this letter, we present a 2D mirror design that provides large optical bandwidth and high reflection while being stiffer than 1D mirrors. Specifically, we investigate the effect of rounded corners of rectangles as they are transferred from the CAD to the wafer by lithography and etching.
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of â¼10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g (2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g (2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).
Today's optical communication systems are fast approaching their capacity limits in the conventional telecom bands. Opening up new wavelength bands is becoming an appealing solution to the capacity crunch. However, this ordinarily requires the development of optical transceivers for any new wavelength band, which is time-consuming and expensive. Here, we present an on-chip continuous spectral translation method that leverages existing commercial transceivers to unlock the vast and currently unused potential new wavelength bands. The spectral translators are continuous-wave laser pumped aluminum gallium arsenide on insulator (AlGaAsOI) nanowaveguides that provide a continuous conversion bandwidth over an octave. We demonstrate coherent transmission in the 2-µm band using well-developed conventional C-band transmitters and coherent receivers, as an example of the potential of the spectral translators that could also unlock communications at other wavelength bands. We demonstrate 318.25-Gbit s-1 Nyquist wavelength-division multiplexed coherent transmission over a 1.15-km hollow-core fibre using this approach. Our demonstration paves the way for transmitting, detecting, and processing signals at wavelength bands beyond the capability of today's devices.
We demonstrate all-optical switching using a multi-mode membranized photonic crystal nanocavity exploiting the free-carrier induced dispersion in InP and the sharp asymmetric lineshape of Fano resonances. A multi-mode cavity is designed to sustain two spatially overlapping modes with a spectral spacing of 18 nm. The measured transmission spectrum of the fabricated device shows multiple asymmetric Fano resonances as predicted by optical simulations. The capabilities of the device are benchmarked by comparing a wavelength conversion from 1538.2 nm to 1565.2 nm with a single-mode wavelength conversion at 1566.2 nm on the same device. The results show an improvement in signal quality with a 5.6 dB power penalty reduction at the receiver as well as in energy efficiency with a reduction of the pump power from 534 fJ/bit to 445 fJ/bit.
Kerr frequency comb generation in microresonators is enabled by notable developments in fabrication technology and novel nonlinear material platforms. However, even in a low loss and highly nonlinear microresonator, the avoided resonance crossing may hamper reliable frequency comb generation. We present a method to suppress the avoided resonance crossing induced by polarization mode coupling. Our approach employs a filter waveguide coupled to a microring resonator for selective filtering of the TM00 mode while keeping the operational TE00 mode with low loss. We experimentally demonstrate an avoided-crossing-suppressed microresonator in the AlGaAs-on-insulator platform.
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.
Exploring new frequency bands for optical transmission is essential to overcome the capacity crunch. The 2-µm band is becoming a research spotlight due to available broadband thulium-doped fiber amplifiers as well as low-latency, low-loss hollow-core fibers. Yet most of the 2-µm band devices designed for optical communication are still in their infancy. In this Letter, we propose wavelength conversion based on four-wave mixing in a highly nonlinear AlGaAsOI nanowaveguide to bridge the 2-µm band and the conventional bands. Due to the strong light confinement of the AlGaAsOI nanowaveguide, high-order phase match is enabled by dispersion engineering to achieve a large synergetic conversion bandwidth with high conversion efficiency. Simulation results show a possible conversion bandwidth over an octave. An AlGaAsOI nanowaveguide with 3-mm length and a nominal cross-section dimension of $ 320\;{\rm nm} \times 680\;{\rm nm} $320nm×680nm is used for the wavelength conversion of a 10 Gbit/s non-return-to-zero on-off keying signal and a 10 Gbit/s Nyquist-shaped four-level pulse-amplitude modulation signal. A conversion efficiency of $ - {28}\;{\rm dB}$-28dB is achieved using a 17.5-dBm continuous-wave pump in the C band, with 744 nm conversion from 1999.65 to 1255.35 nm.
We demonstrate supercontinuum generation over an octave spaning from 1055 to 2155 nm on the highly nonlinear aluminum gallium arsenide (AlGaAs)-on-insulator platform. This is enabled by the generation of two dispersive waves in a 3-mm-long dispersion-engineered nano-waveguide. The waveguide is pumped at telecom wavelengths (1555 nm) with 3.6 pJ femtosecond pulses. We experimentally validate the coherence of the generated supercontinuum around the pump wavelength (1450-1750 nm), and our numerical simulation shows a high degree of coherence over the full spectrum.
We demonstrate a highly effective nonlinearity of 7.3 W-1 m-1 in a high-confinement gallium nitride-on-sapphire waveguide by performing four-wave mixing characterization at telecom wavelengths. Benefitting from a high-index-contrast waveguide layout, we can engineer the device dispersion efficiently and achieve broadband four-wave mixing operation over more than 100 nm. The intrinsic material nonlinearity of gallium nitride is extracted. Furthermore, we fabricate microring resonators with quality factors above 100,000, which will be promising for various nonlinear applications.
We experimentally demonstrate the use of photonic crystal Fano resonances for reshaping optical data signals. We show that the combination of an asymmetric Fano resonance and carrier-induced nonlinear effects in a nanocavity can be used to realize a nonlinear power transfer function, which is a key functionality for optical signal regeneration, particularly for suppression of amplitude fluctuations of data signals. The experimental results are explained using simulations based on coupled-mode theory and also compared to the case of using conventional Lorentzian-shaped resonances. Using indium phosphide photonic crystal membrane structures, we demonstrate reshaping of 2 Gbit/s and 10 Gbit/s return-to-zero on-off keying (RZ-OOK) data signals at telecom wavelengths around 1550 nm. Eye diagrams of the reshaped signals show that amplitude noise fluctuations can be significantly suppressed. The reshaped signals are quantitatively analyzed using bit-error ratio (BER) measurements, which show up to 2 dB receiver sensitivity improvement at a BER of 10-9 compared to a degraded input noisy signal. Due to efficient light-matter interaction in the high-quality factor and small mode-volume photonic crystal nanocavity, low energy consumption, down to 104 fJ/bit and 41 fJ/bit for 2 Gbit/s and 10 Gbit/s, respectively, has been achieved. Device perspectives and limitations are discussed.
