A trajectory tracking control system for paddle boat in intelligent aquaculture.

Trajectory tracking plays a notable role in unmanned surface vehicles (USV), especially for the emerging intelligent aquaculture, as the level of integration, high-efficiency, and low-labor-intensity of such USV is determined by trajectory tracking. Here, we report a generic trajectory tracking control system for a paddle boat by establishing a three-degree-of-freedom kinematics model, which could precisely characterize the relationship between velocities, forces and moments of the paddle boat. A Pixhawk 4 as the core controller of the hardware system could be integrated with the other hardware submodules and could complete the wireless data transmission, monitoring and remote control functions. Meanwhile, we establish a fuzzy rule table, consider the advantages of line-of-sight (LOS) guidance and fuzzy adaptive proportional-integral-differential (PID) algorithm, combine the two parts and apply them as the key algorithm in the trajectory tracking of the paddle boat. Demonstrations include trajectory tracking effect at different velocities, turning effect at left-turn moment, and trajectory tracking effect at different turning angles. The results show that the paddle boat is able to travel under the trajectory formed by following the planned waypoints within the error allowed, which is called effective trajectory tracking. And can offer an alternative pathway toward achieving effective trajectory tracking control in advanced intelligent aquaculture USV for smartly and wirelessly operated pond drug spraying.

Exploring the Effect of Selenidation Time on the Ni-Doped Cu2ZnSn(S,Se)4 Solar Cell.

The Cu2Ni0.05Zn0.95Sn(S,Se)4 (CNZTSSe) films were synthesized by sol-gel combined with selenidation treatment. To further enhance the crystal quality of the film, the selenidation conditions were optimized, and the effects of selenidation time on the properties of the CNZTSSe films and devices were systematically studied. The results show that the crystallinity of the films increased remarkably with the increase of selenidation time. Under the optimum selenidation time of 15 min, smooth and dense films were obtained. Through the analysis of EDS results, it is found that Se occupies more S positions with the increase of selenidation time, which decreases the band gap of the film from 1.14 eV to 1.0 eV. In addition, the formation of Zn-related defects is effectively suppressed by Ni doping to enhance the open circuit voltage (Voc) of the CNZTSSe solar cells. When the selenidation time is 15 min, the CNZTSSe film has the highest carrier concentration of 1.68 × 1016 cm-3, and the best efficiency of the device prepared based on the film as the absorption layer is 5.0%, and the Voc is 337 mV.

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells.

Cu2Ni0·05Zn0·95Sn(S,Se)4 (CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol-gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of SnZn and the defect cluster [2CuZn + SnZn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (Voc) of the prepared device reached 344 mV and the PCE reached 5.16%.

A novel amino acid site of N protein could affect the PRRSV-2 replication by regulating the viral RNA transcription.

BACKGROUND: Finding the key amino acid sites that could affect viral biological properties or protein functions has always been a topic of substantial interest in virology. The nucleocapsid (N) protein is one of the principal proteins of the porcine reproductive and respiratory syndrome virus (PRRSV) and plays a vital role in the virus life cycle. The N protein has only 123 or 128 amino acids, some of key amino acid sites which could affect the protein functions or impair the viral biological characteristics have been identified. In this research, our objective was to find out whether there are other novel amino acid sites of the N protein can affect N protein functions or PRRSV-2 replication. RESULTS: In this study, we found mutated the serine78 and serine 99of the nucleocapsid (N) protein can reduce the N-induced expression of IL-10 mRNA; Then, by using reverse genetics system, we constructed and rescued the mutant viruses, namely, A78 and A99.The IFA result proved that the mutations did not affect the rescue of the PRRSV-2. However, the results of the multistep growth kinetics and qPCR assays indicated that, compared with the viral replication ability, the titres and gRNA levels of A78 were significantly decreased compared with the wild-type. Further study showed that a single amino acid change from serine to alanine at position 78 of the N protein could abrogates the level of viral genomic and subgenomic RNAs. It means the mutation could significant decrease the viral replication efficiency in vitro. CONCLUSIONS: Our results suggest that the serine78 of N protein is a key site which could affect the N protein function and PRRSV replication ability.

Extensive genetic diversity and recombination events identified in goose circoviruses circulating in partial areas of Guangdong province, Southern China.

Circoviruses represent a group of small viruses with circular single-strand DNA genome that infect a wide range of both domesticated and wild animals. Domesticated geese infected with circovirus have been confirmed in many parts of the world, and is considered to cause immunosuppression and facilitate the secondary infections caused by other pathogens. In the present study, extensive genetically diversified goose circoviruses (GoCVs) were identified in the liver samples of domesticated geese from Guangdong province, southern China. Genetic analysis revealed that the sequences generated in this study shared 81.5 to 99.7% genome-wide pairwise identity with previously identified GoCV genomes. More importantly, nine recombination events were identified among all known complete genomome sequences of GoCV including those obtained herein, and the majority was determined associate with the sequences identified from Guangdong province, suggesting that recombination is the primary driver for the diversification of GoCVs. Additionally, purifying selection was the dominant evolutionary pressure acting on the genomes of GoCVs, and the ORF C1 gene of GoCV showed a higher genetic variation than ORF V1 gene. These results expand the knowledge about the genetic diversity and evolution of GoCV, and also indicate extensive genetically divergent GoCV strains were co-circulating in goose population in partial areas of Guangdong province, southern China.

A Study on the Effects of Selenization Temperature on the Properties of Na-Doped Cu2ZnSn(S,Se)4 Thin Film and Its Correlation with the Performance of Solar Cells.

In this study, we prepared Na-doped Cu2ZnSn(S,Se)4 [noted as (Na0.1Cu0.9)2ZnSn(S,Se)4] films on the Mo substrate using a simple and cheap sol-gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped Cu2ZnSn(S,Se)4 were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10-1 cm2/Vs, and carrier concentration of 2.93 × 1017 cm-3. Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm2 and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.

Enhancing the Performance of Aqueous Solution-Processed Cu2ZnSn(S,Se)4 Photovoltaic Materials by Mn2+ Substitution.

In this work, the Cu2MnxZn1-xSn(S,Se)4 (0 ≤ x ≤ 1) (CMZTSSe) alloy films were fabricated by a sol-gel method. Meanwhile, the effects of Mn substitution on the structural, morphological, electrical, optical, and device performance were studied systematically. The clear phase transformation from Cu2ZnSn(S,Se)4 (CZTSSe) with kesterite structure to Cu2MnSn(S,Se)4 (CMTSSe) with stannite structure was observed as x = 0.4. The scanning electron microscope (SEM) results show that the Mn can facilitate the grain growth of CMZTSSe alloy films. Since the x was 0.1, the uniform, compact, and smooth film was obtained. The results show that the band gap of the CMZTSSe film with a kesterite structure was incessantly increased in a scope of 1.024-1.054 eV with the increase of x from 0 to 0.3, and the band gap of the CMZTSSe film with stannite structure was incessantly decreased in a scope of 1.047-1.013 eV with the increase of x from 0.4 to 1. Meanwhile, compared to the power conversion efficiency (PCE) of pure CZTSSe device, the PCE of CMZTSSe (x = 0.1) device is improved from 3.61% to 4.90%, and about a maximum enhanced the open-circuit voltage (VOC) of 30 mV is achieved. The improvement is concerned with the enhancement of the grain size and decrease of the Cu instead of Zn (CuZn) anti-site defects. Therefore, it is believed that the adjunction of a small amount of Mn may be an appropriate approach to improve the PCE of CZTSSe solar cells.

Substitution of Ag for Cu in Cu2ZnSn(S,Se)4: Toward Wide Band Gap Absorbers with Low Antisite Defects for Thin Film Solar Cells.

Cation substitution is a promising approach to reduce the antisite defects and further improve the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) cells. In this paper, silver (Ag) has been introduced into Cu2ZnSn(S,Se)4 (CZTSSe) thin film to replace Cu partially and form (Cu1-xAgx)2ZnSn(S,Se)4 (0 ≤ x ≤ 1) (CAZTSSe) alloy films by combination of solution method and a rapid annealing technique. The fundamental properties of the mixed Ag-Cu kesterite compound are systematically reported as a function of the Ag/(Ag+Cu) ratio. The results show that band gap of kesterite CAZTSSe is incessantly increased by adjusting the Ag doping content, indicating that the CAZTSSe alloy film is a potentially applicable bandgap grading absorption layers material to obtain higher CZTSSe device. Furthermore, CAZTSSe alloy films with better electrical performance were also obtained by adjusting the Ag content during film fabrication. Finally, we also observed an increment in open circuit voltage (Voc) by 160 mV and an accompanying rise in device efficiency from 4.24 to 5.95%. The improvement is correlated to the improved grain size and decreased antisite defects of Cu instead of Zn site (CuZn) in the lattice. The Voc enhancement evidences that the solution method is facile and viable to achieve proper cation substitution toward higher efficiency kesterite solar cells. In addition, the CAZTSSe cell also displays better charge collection performance because of the higher fill factor (FF) and power conversion efficiency (PCE). Therefore, it can be concluded that the doping of Ag is a potentially appropriate method to reduce the Cuzn antisite defects of CZTSSe and improve efficiency of CZTSSe device.