Superconducting Field-Effect Transistors with PdxTe-Te Intimate Contacts.

Superconducting-based electronic devices have shown great potential for future quantum computing applications. One key building block device is a superconducting field-effect transistor based on a superconductor-semiconductor-superconductor Josephson-junction (JJ) with a gate-tunable semiconducting channel. However, the performance of such devices is highly dependent on the quality of the superconductor to semiconductor interface. In this study, we present an alternative method to obtain a high-quality interface by using intimate contact. We investigate the proximity-induced superconductivity in chiral crystal tellurium (Te) and fabricate a PdxTe-Te-PdxTe JJ with an ambipolar supercurrent that is gate-tunable and exhibits multiple Andreev reflections. The semiconducting two-dimensional Te single crystal is grown hydrothermally and partially converted to superconducting PdxTe by controlled annealing. Our work demonstrates a promising path for realizing controllable superconducting electronic devices with high-quality superconducting interfaces; thus, we can continue to advance the field of quantum computing and other interface-based technologies.

Review-Extremely Thin Amorphous Indium Oxide Transistors.

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back-end-of-line compatible channel materials for monolithic 3D applications. However, achieving high-mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long-standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement-mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, the history leading to the re-emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state-of-the-art indium oxide device research, and the bias stability of the devices are reviewed.

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analogue applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current in planar FET, exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A high transconductance reaches 4 S/mm, recorded among all transistors with a planar structure. Planar FETs working ballistically or quasi-ballistically are exploited as one of the simplest platforms to investigate the intrinsic transport properties. It is found experimentally and theoretically that a high carrier density and high electron velocity both contribute to this high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V, and split C-V measurements at room temperature confirm a high carrier density of up to 6-7 × 1013 /cm2 and a high velocity of about 107 cm/s, well-supported by density functional theory (DFT) calculations. The simultaneous demonstration of such high carrier concentration and average band velocity is enabled by the exploitation of the ultrafast pulse scheme and heat dissipation engineering.

A novel gelatin/carboxymethyl chitosan/nano-hydroxyapatite/ß-tricalcium phosphate biomimetic nanocomposite scaffold for bone tissue engineering applications.

Hydroxyapatite (HA) and tricalcium phosphate (TCP) constitute 60% of the content of the bone, and their combination has a better effect on bone tissue engineering than either single element. This study demonstrates a new degradable gelatin/carboxymethyl chitosan (CMC) bone scaffold loaded with both nano-HA and ß-TCP (hereinafter referred to as HCP), and freeze drying combined with stir foaming was used to obtain highly connected macropores. Only a few studies have used these components to synthesize a four-component osteogenic scaffold. The aim of this study was to comprehensively assess the biocompatibility and osteoinductivity of the nanocomposites. Three HCP/CMC/gelatin scaffolds were made with different HCP contents: group A (10 wt% HCP), group B (30 wt% HCP), and group C (50 wt% HCP) (the ratio of nano-HA and ß-TCP was fixed at 3:2). The scaffolds were macroporous with a high porosity and pore connectivity, as observed by morphological analysis by scanning electron microscopy. Additionally, the pore size of groups A and B was more homogeneous than that of group C. There were no significant differences in physicochemical characterization among the three groups. The Fourier-transform infrared (FTIR) spectroscopy test indicated that the scaffold contained active groups, such as hydroxyl, amino, or peptide bonds, corresponding to gelatin and CMC. The XRD results showed that the phase structures of HA and ß-TCP did not change in the nanocomposite. The scaffolds had biodegradation potential and an appreciable swelling ratio, as demonstrated with the in vitro test. The scaffolds were cultured in vitro with MC3T3-E1 cells, showing that osteoinduction and osteoconduction increased with the HCP content. None of the scaffolds showed cytotoxicity. However, cell adhesion and growth in group B were better than those in group A and group C. Therefore, freeze drying combined with a stir foaming method may have a solid component limit. This study demonstrates a novel four-component scaffold via a simple manufacturing process. Group B (30% HCP) had the best characteristics for bone scaffold materials.

Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction.

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In2Se3/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In2Se3 c-FSJ is achieved with a high on/off ratio > 104 at room temperature, on/off ratio > 103 at an elevated temperature of 140 °C, retention > 104 s, and endurance > 106 cycles. The on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >108 by introducing a metal/α-In2Se3/insulator/metal structure.

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene.

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly be observed through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable band gaps due to their accidental band-crossing origin. Here, we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the two-dimensional form of tellurium, possesses a chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial π Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

Bactericidal and antifouling electrospun PVA nanofibers modified with a quaternary ammonium salt and zwitterionic sulfopropylbetaine.

Bacterial adhesion and colonization on material surfaces have attracted great attention due to their potential threat to human health. Combining bactericidal and antifouling functions has been confirmed as an optimal strategy to prevent microbial infection. In this work, biodegradable electrospun polyvinyl alcohol (PVA) nanofibers were chosen due to its high specific area and abundant reactive hydroxyl groups. A quaternary ammonium salt (IQAS) and zwitterionic sulfopropylbetaine (ISB), both containing isocyanate (NCO) groups, were chemically bonded to the PVA nanofiber surface via a coupling reaction between the OH groups of the PVA nanofibers and the NCO groups of IQAS or ISB. The results indicated that the antimicrobial rates of PVA nanofibers modified by IQAS (0.5%) reached 99.9% against both gram-positive Staphylococcus aureus (S. aureus, ATCC 6538) and gram-negative Escherichia coli (E. coli, ATCC 25922). Additionally, the live/dead staining and cytotoxicity test indicated that the dual functional IQAS/ISB/PVA nanofibers exhibited excellent bactericidal and antifouling activities with low cytotoxicity. This work may provide practical guidelines to fabricate bactericidal and antifouling materials for healthcare applications, including but not limited to wound dressings, textile, food packaging and air filtration.

Oridonin inhibits the migration and epithelial-to-mesenchymal transition of small cell lung cancer cells by suppressing FAK-ERK1/2 signalling pathway.

Small cell lung cancer (SCLC) is a severe malignant with high morbidity; however, few effective and secure therapeutic strategy is used in current clinical practice. Oridonin is a small molecule from the traditional Chinese herb Rabdosia rubescens. This study mainly aimed to investigate the role of oridonin on inhibiting the process of H1688, a kind of small cell lung cancer cells from human. Oridonin could suppress H1688 cell proliferation and induce their apoptosis in a high dosage treatment (20 µmol/L). Meanwhile, cell migration was suppressed by oridonin (5 and 10 µmol/L) that did not affect cell proliferation and apoptosis. The expression level of E-cadherin was significantly increased, and the expression of vimentin, snail and slug was reduced after administration of oridonin. These expression changes were associated with the suppressed integrin ß1, phosphorylation of focal adhesion kinase (FAK) and ERK1/2. In addition, oridonin (5 and 10 mg/kg) inhibited tumour growth in a nude mouse model; however, HE staining revealed a certain degree of cytotoxicity in hepatic tissue after treatment oridonin (10 mg/kg). Furthermore, the concentration of alanine aminotransferase (ALP) was significantly increased and lactate dehydrogenase (LDH) was reduced after oridonin treatment (10 mg/kg). Immunohistochemical analysis further revealed that oridonin increased E-cadherin expression and reduced vimentin and phospho-FAK levels in vivo. These findings indicated that oridonin can inhibit the migration and epithelial-to-mesenchymal transition (EMT) of SCLC cells by suppressing the FAK-ERK1/2 signalling pathway. Thus, oridonin may be a new drug candidate to offer an effect of anti-SCLC with relative safety.