Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering.

Magnetic tunnel junctions (MTJs) consisting of two-dimensional (2D) van der Waals heterostructures have no inter-layer chemical bonds; therefore, their spin tunneling is determined solely by the Brillouin zone (BZ) filtering effect. To obtain high tunnel magnetoresistance (TMR), they should possess transversal momentum-resolved conduction channels for the electrodes and transmission channels for the barriers. Here, we investigate 2D magnets as electrodes whose Curie temperatures approach room temperature and also hexagonal 2D insulators as the barrier. Iron-based compounds such as FexGeTe2 (x = 3 and 4) are calculated to have high transmission coefficients over the entire in-plane BZ for the majority spin channel, while this should only happen around Γ for the minority spin channel. Correspondingly, various 2H-type transition metal dichalcogenides (TMDs) are found to function effectively as spin barriers, where electrons are only allowed to tunnel through them around the K and M points. BZ spin filtering is confirmed to be the major mechanism of the TMR effect by the MTJ transport calculation using the non-equilibrium Green function method. Furthermore, the TMR is calculated to be nearly independent of the barrier layer thickness as the BZ filtering is an interfacial effect. This work sheds light on material selection procedures and designing ultra-thin and robust van der Waals MTJs.

Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation.

The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film's normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride.

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing an hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

Efficient Orbitronic Terahertz Emission Based on CoPt Alloy.

Orbitronic devices operate by manipulating orbitally polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in a ferromagnet such as Ni and converted into ultrafast charge currents via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitters based on Ni is still much weaker than that of the typical spintronic terahertz emitter. Here, this work reports a more efficient light-induced generation of orbital current from a CoPt alloy, and the terahertz emission from CoPt/Cu/MgO is comparable to that of benchmark spintronic terahertz emitters. By varying the composition of the CoPt alloy, the thickness of Cu, and the capping layer, this work confirms that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu, followed by subsequent orbital-to-charge conversion due to the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the efficient orbital current generation in CoPt alloy, paving the way for efficient orbital terahertz emitters.

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo.

Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξDL| = 0.015 ± 0.001 and field-like SOT efficiency |ξFL| = 0.050 ± 0.001 are found in amorphous Mo. The ξFL/ξDL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.

Universal scaling law for chiral antiferromagnetism.

The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity ( ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term, a s k and non-collinear spin-texture induced intrinsic anomalous Hall term, b i n . We found that a s k and b i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers.

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

A hybrid topological quantum state in an elemental solid.

Topology1-3 and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three important research directions: (1) the competition between distinct interactions, as in several intertwined phases, (2) the interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and (3) the coalescence of several topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, although the last example remains mostly unexplored, mainly because of the lack of a material platform for experimental studies. Here, using tunnelling microscopy, photoemission spectroscopy and a theoretical analysis, we unveil a 'hybrid' topological phase of matter in the simple elemental-solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology that stabilizes a hybrid topological phase. Although momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topologically induced step-edge conduction channels revealed on various natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step-edge states in arsenic relies on the simultaneous presence of both a non-trivial strong Z2 invariant and a non-trivial higher-order topological invariant, which provide experimental evidence for hybrid topology. Our study highlights pathways for exploring the interplay of different band topologies and harnessing the associated topological conduction channels in engineered quantum or nano-devices.

Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling.

Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field-free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.

Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments.

Orbitronics is based on the use of orbital currents as information carriers. Orbital currents can be generated from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbital currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such as Cu, we detect the orbital currents by their conversion into charge currents and the resulting terahertz emission. We show that the orbital currents extraordinarily predominate the light-induced spin currents in Ni-based systems, whereas only spin currents can be detected with CoFeB-based systems. In addition, the analysis of the time delays of the terahertz pulses leads to relevant information on the velocity and propagation length of orbital carriers. Our finding of light-induced orbital currents and our observation of their conversion into charge currents opens new avenues in orbitronics, including the development of orbitronic terahertz devices.

Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet.

Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

Spin-charge interconversion of two-dimensional electron gases at oxide interfaces.

Oxide two-dimensional electron gas (2DEG) is a low-dimensional carrier system formed at the interface of oxide heterojunctions with strong and tunable Rashba spin-orbit coupling which makes oxide 2DEG an ideal platform for converting spin current and charge current. This review provides a summary of the recent advances on the 2DEGs at oxide interfaces for spin-charge interconversion. On one hand, we analyze properties and the efficiency of the spin-to-charge conversion through different ways of spin current injection. On the other hand, the conversion of charge current to spin current under different experimental methods has been summarized. These research achievements provide perspectives and methods for understanding and regulating the spin-charge interconversion of the 2DEG at the oxide interface.

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators.

Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high heretointegrability. However, realizing magnetic switching with low power consumption at room temperature is challenging. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in an all-van der Waals (vdW) heterostructure using an optimized epitaxial growth approach. The topological insulator Bi2Te3 not only raises the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing the FGT to switch at a low current density of ~2.2×106 A/cm2. The SOT efficiency is ~2.69, measured at room temperature. The temperature and thickness-dependent SOT efficiency prove that the larger SOT in our system mainly originates from the nontrivial topological origin of the heterostructure. Our experiments enable an all-vdW SOT structure and provides a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.

Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current.

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii-Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼102 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.

Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets.

Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR in antiferromagnetic (AFM) systems has not been fully understood to date. In this work, we reported UMR in a YFeO3/Pt heterostructure where YFeO3 is a typical AFM insulator. Magnetic-field dependence and temperature dependence of transport measurements indicate that magnon dynamics and interfacial Rashba splitting are two individual origins for AFM UMR, which is consistent with the UMR theory in ferromagnetic systems. We further established a comprehensive theoretical model that incorporates micromagnetic simulation, density functional theory calculation, and the tight-binding model, which explain the observed AFM UMR phenomenon well. Our work sheds light on the intrinsic transport property of the AFM system and may facilitate the development of AFM spintronic devices.

An integrated ultra-high vacuum cluster for atomic-scale deposition, interface regulation, and characterization of spintronic multilayers.

The study of interface spin effects in spintronic multilayer films requires distinguishing the effects generated by different interfaces. However, testing in atmospheric conditions requires a capping layer to protect the films, which introduces new interfaces and limits the study of interface spin-dependent effects. To address this challenge, we have developed an integrated ultra-high vacuum cluster system that includes magnetron sputtering equipment, ion irradiation equipment, and time-resolved magneto-optical Kerr effect (TR-MOKE) equipment. Our sputtering system integrates 12 cathodes in a single chamber, allowing the co-sputtering of four targets. The ultimate vacuum can reach 1 × 10-10 mbar, and the deposition resolution of 0.1 nm can be achieved. Ion irradiation equipment can ionize to produce He+, and by screening and accelerating the implantation of He+ into multilayer films, ion scanning is realized, and up to 30 keV energy can be applied to the films. The TR-MOKE equipment can detect ultra-fast magnetic dynamics processes in vacuum conditions, and its external magnetic field can be rotated 360°. Our vacuum cluster system connects the three subsystems, allowing in situ film deposition, regulation, and characterization. By accurately detecting the effects of different layers, the system can distinguish the interface effects of multilayers. Experimental results demonstrate that the three subsystems can work independently or coordinate to observe the interface effects of multilayers.

Generation of a Focused THz Vortex Beam from a Spintronic THz Emitter with a Helical Fresnel Zone Plate.

Similar to optical vortex beams, terahertz (THz) vortex beams (TVBs) also carry orbital angular momentum (OAM). However, little research has been reported on the generation of TVBs. In this paper, based on the detour phase technique, we design a series of spintronic terahertz emitters with a helical Fresnel zone plate (STE-HFZP) to directly generate focused TVBs with topological charges (TCs) of l = ±1, ±2 and ±3, respectively. The STE-HFZP is a hybrid THz device composed of a terahertz emitter and a THz lens, and it has a high numerical aperture (NA), achieving subwavelength focal spots. Its focus properties are surveyed systemically through accurate simulations. This STE-HFZP can also generate focused TVBs with higher order TCs. More importantly, the components of the focused electric field with OAM make up the majority of the intensity and have potential applications in the field of THz communications, THz imaging and atom trapping.

Experimental demonstration of a skyrmion-enhanced strain-mediated physical reservoir computing system.

Physical reservoirs holding intrinsic nonlinearity, high dimensionality, and memory effects have attracted considerable interest regarding solving complex tasks efficiently. Particularly, spintronic and strain-mediated electronic physical reservoirs are appealing due to their high speed, multi-parameter fusion and low power consumption. Here, we experimentally realize a skyrmion-enhanced strain-mediated physical reservoir in a multiferroic heterostructure of Pt/Co/Gd multilayers on (001)-oriented 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT). The enhancement is coming from the fusion of magnetic skyrmions and electro resistivity tuned by strain simultaneously. The functionality of the strain-mediated RC system is successfully achieved via a sequential waveform classification task with the recognition rate of 99.3% for the last waveform, and a Mackey-Glass time series prediction task with normalized root mean square error (NRMSE) of 0.2 for a 20-step prediction. Our work lays the foundations for low-power neuromorphic computing systems with magneto-electro-ferroelastic tunability, representing a further step towards developing future strain-mediated spintronic applications.

Magneto-ionic Control of Ferrimagnetic Order by Oxygen Gating.

Ferrimagnets are considered an excellent spintronic material candidate which combines ultrafast magnetic dynamics and straightforward electrical detectability. However, efficient routes toward magneto-ionic control of ferrimagnetic order remain elusive. In this study, a solid-state oxygen gating device was designed to control the magnetic properties of the ferrimagnetic CoTb alloy. Experimental results show that applying a small voltage can irreversibly tune a Tb-dominant device to a stable Co-dominant state and decrease the magnetization compensation temperature by 130 K. In addition, a reversible voltage control of the magnetization axis between out-of-plane and in-plane states is observed, which indicates that the migrated oxygen ions can bond to both Tb and Co sublattices. First-principles calculations indicate that voltage can dynamically control the flow-in and flow-out of oxygen ions that bond to the Co sublattice. Our work provides an effective means to manipulate ferrimagnetic order and contributes to the development of ultra-low-power spintronic devices.