Angular-dependent magnetoresistance modulated by interfacial magnetic state in Pt/LSMO heterostructures.

The interfaces between heavy metals and antiferromagnetic materials have garnered significant attention due to their interesting physical properties. La0.35Sr0.65MnO3 (LSMO), as a typical manganite, exhibits an antiferromagnetic ground state that can be controlled through epitaxial strain and interfacial spin-orbit coupling. In this work, we reported the diverse magnetoresistance, influenced by the interfacial magnetic state, in Pt (3 nm)/LSMO (6-20 nm) heterostructures. The strong spin-orbit coupling of Pt and Dzyaloshinskii-Moriya interaction alter the spin structure and enhance the electron scattering at the Pt/LSMO interface, resulting in positive magnetoresistance. The interfacial angular-dependent magnetoresistance modulated by the interfacial magnetic states was also observed in the Pt/LSMO (20 nm) heterostructures. Our findings contribute to a broader understanding of interfacial properties between heavy metals and antiferromagnetic manganites.

Reconfigurable spin current transmission and magnon-magnon coupling in hybrid ferrimagnetic insulators.

Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon-magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial Gd3Fe5O12 and Y3Fe5O12 insulators. By adjusting the compensated moment in Gd3Fe5O12, magnon-magnon coupling was achieved and engineered with pronounced anticrossings between two Kittel modes, accompanied by divergent dissipative coupling approaching the magnetic compensation temperature of Gd3Fe5O12 (TM,GdIG), which were modeled by coherent spin pumping. Remarkably, we further identified, both experimentally and theoretically, a drastic variation in the coherent spin wave-mediated spin current across TM,GdIG, which manifested as a strong dependence on the relative alignment of magnetic moments. Our findings provide significant fundamental insight into the reconfiguration of coherent spin waves and offer a new route towards constructing artificial magnonic architectures.

Anisotropic Superconducting Nb2 CTx MXene Processed by Atomic Exchange at the Wafer Scale.

Superconductivty has recently been induced in MXenes through surface modification. However, the previous reports have mostly been based on powders or cold-pressed pellets, with no known reports on the intrinsic superconsucting properties of MXenes at the nanoale. Here, it is developed a high-temperature atomic exchange process in NH3 atmosphere which induces superconductivity in either singleflakes or thin films of Nb2 CTx MXene. The exchange process between nitrogen atoms and fluorine, carbon, and oxygen atoms in the MXene lattice and related structural adjustments are studied using both experiments and density functional theory. Using either single-flake or thin-film devices, an anisotropic magnetic response of the 2D superconducting transformation has been successfully revealed. The anisotropic superconductivity is further demonstrated using superconducting thin films uniformly deposited over a 4 in. wafers, which opens up the possibility of scalable MXene-based superconducting devices.

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors.

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.

Controllable Skyrmionic Phase Transition between Néel Skyrmions and Bloch Skyrmionic Bubbles in van der Waals Ferromagnet Fe3-δ GeTe2.

The van der Waals (vdW) ferromagnet Fe3-δ GeTe2 has garnered significant research interest as a platform for skyrmionic spin configurations, that is, skyrmions and skyrmionic bubbles. However, despite extensive efforts, the origin of the Dzyaloshinskii-Moriya interaction (DMI) in Fe3-δ GeTe2 remains elusive, making it challenging to acquire these skyrmionic phases in a controlled manner. In this study, it is demonstrated that the Fe content in Fe3-δ GeTe2 has a profound effect on the crystal structure, DMI, and skyrmionic phase. For the first time, a marked increase in Fe atom displacement with decreasing Fe content is observed, transforming the original centrosymmetric crystal structure into a non-centrosymmetric symmetry, leading to a considerable DMI. Additionally, by varying the Fe content and sample thickness, a controllable transition between Néel-type skyrmions and Bloch-type skyrmionic bubbles is achieved, governed by a delicate interplay between dipole-dipole interaction and the DMI. The findings offer novel insights into the variable skyrmionic phases in Fe3-δ GeTe2 and provide the impetus for developing vdW ferromagnet-based spintronic devices.

Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation.

Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 µC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.

Switching magnetic strip orientation using electric fields.

In spintronics, ordered magnetic domains are important for magnetic microdevices and controlling the orientation of ordered magnetic domains is important for applications such as domain wall resistance and spin wave propagation. Although a magnetic field or a current can reorient ordered magnetic domains, an energy-efficient electric-field-driven rotation of the ordered magnetic domains remains elusive. Here, using a nanotrenched polymeric layer, we obtain ordered magnetic strip domains in Ni films on a ferroelectric substrate. By applying electric fields to the ferroelectric substrate, we demonstrate that the ordered magnetic strip domains in Ni films are switched between the y- and x-axes driven by electric-fields. This switching of magnetic strip orientation is attributed to the electric-field-modulated in-plane magnetic anisotropies along the x- and y-axes of the Ni films, which are caused by the anisotropic biaxial strain of the ferroelectric substrate via strain-mediated magnetoelectric coupling. These results provide an energy-efficient approach for manipulating the ordered magnetic domains using electric fields.

Ferroelectricity in layered bismuth oxide down to 1 nanometer.

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures.

With recent advances in two-dimensional (2D) ferromagnets with enhanced Curie temperatures, it is possible to develop all-2D spintronic devices with high-quality interfaces using 2D ferromagnets. In this study, we have successfully fabricated nonlocal spin valves with Fe3GeTe2 (FGT) as the spin source and detector and multilayer graphene as the spin transport channel. The nonlocal spin transport signal was found to strongly depend on temperature and disappear at a temperature below the Curie temperature of the FGT flakes, which stemmed from the temperature-dependent ferromagnetism of FGT. The spin injection efficiency was estimated to be about 1%, close to that of conventional nonlocal spin valves with transparent contacts between ferromagnetic electrodes and the graphene channel. In addition, the spin transport signal was found to depend on the direction of the magnetic field and the magnitude of the current, which was due to the strong perpendicular magnetic anisotropy of FGT and the thermal effect, respectively. Our results provide opportunities to extend the applications of van der Waals heterostructures in spintronic devices.

Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation.

Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr1+ x Te2 with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr1.53 Te2 with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.

Magnetic Skyrmions with Unconventional Helicity Polarization in a Van Der Waals Ferromagnet.

Skyrmion helicity, which defines the spin swirling direction, is a fundamental parameter that may be utilized to encode data bits in future memory devices. Generally, in centrosymmetric ferromagnets, dipole skyrmions with helicity of -π/2 and π/2 are degenerate in energy, leading to equal populations of both helicities. On the other hand, in chiral materials where the Dzyaloshinskii-Moriya interaction (DMI) prevails and the dipolar interaction is negligible, only a preferred helicity is selected by the type of DMI. However, whether there is a rigid boundary between these two regimes remains an open question. Herein, the observation of dipole skyrmions with unconventional helicity polarization in a van der Waals ferromagnet, Fe5- δ GeTe2 , is reported. Combining magnetometry, Lorentz transmission electron microscopy, electrical transport measurements, and micromagnetic simulations, the short-range superstructures in Fe5- δ GeTe2 resulting in a localized DMI contribution, which breaks the degeneracy of the opposite helicities and leads to the helicity polarization, is demonstrated. Therefore, the helicity feature in Fe5- δ GeTe2 is controlled by both the dipolar interaction and DMI that the former leads to Bloch-type skyrmions with helicity of ±π/2 whereas the latter breaks the helicity degeneracy. This work provides new insights into the skyrmion topology in van der Waals materials.

Electrically and optically erasable non-volatile two-dimensional electron gas memory.

The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.

High-Efficiency Magnon-Mediated Magnetization Switching in All-Oxide Heterostructures with Perpendicular Magnetic Anisotropy.

The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron-mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all-oxide heterostructures of SrRuO3 /NiO/SrIrO3 are epitaxially grown on SrTiO3 single-crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO3 with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO3 with strong spin-orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion-related energy dissipation from electron-mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all-oxide spintronic devices operated by magnon current.

Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet.

Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd3Fe5O12/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (Tcomp ∼ 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above Tcomp, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of Tcomp, although the effective SOT field increases close to Tcomp. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.

Association between metformin use and the risk of age-related macular degeneration in patients with type 2 diabetes: a retrospective study.

OBJECTIVES: To investigate the effect of metformin on the decreased risk of developing age-related macular degeneration (AMD) in patients with type 2 diabetes mellitus (T2DM) for ≥10 years. DESIGN: A retrospective study. PARTICIPANTS: Patients aged ≥50 with a diagnosis of T2DM no less than 10 years were included. METHODS: Variables predisposing to AMD were reviewed; the potential confounders related to T2DM or AMD were selected from literature records; AMD and diabetic retinopathy (DR) were diagnosed by funduscopy, optical coherence tomography and/or fluorescein angiography. The subgroup analysis was performed in early and late AMD. The protective effect of metformin was evaluated in duration-response and dose-response patterns. RESULTS: A total of 324 patients (115 metformin non-users and 209 users) were included in the final analysis. AMD was observed in 15.8% of metformin users and 45.2% of metformin non-users (p<0.0001). The ORs for any AMD, early AMD and late AMD present in patients with DR were 0.06 (0.02-0.20), 0.03 (0.00-0.20) and 0.17 (0.04-0.75). The serum high-density lipoprotein level was positively associated with the late AMD risk (p=0.0054). When analysed by the tertiles of cumulative duration, a similarly reduced risk was observed for the second (5-9 years) (OR: 0.24, 95% CI: 0.08 to 0.75) and third tertiles (≥10 years) (OR: 0.22, 95% CI: 0.09 to 0.52) compared with the first tertile (≤4 years). CONCLUSION: Among patients with T2DM for ≥10 years, metformin users were less likely to develop any AMD and early AMD than non-users; however, the late AMD was not significantly associated with the use of metformin. Also, AMD was less prevalent in patients with DR. The prolonged metformin treatment with a high cumulative dose enhanced the protective effect against AMD. Metformin significantly reduces the AMD risk when the cumulative duration is >5 years.

Unconventional Spin Pumping and Magnetic Damping in an Insulating Compensated Ferrimagnet.

Recently, the interest in spin pumping (SP) has escalated from ferromagnets into antiferromagnetic systems, potentially enabling fundamental physics and magnonic applications. Compensated ferrimagnets are considered alternative platforms for bridging ferro- and antiferromagnets, but their SP and the associated magnetic damping have been largely overlooked so far despite their seminal importance for magnonics. Herein, an unconventional SP together with magnetic damping in an insulating compensated ferrimagnet Gd3 Fe5 O12 (GdIG) is reported. Remarkably, the divergence of the nonlocal effective magnetic damping induced by SP close to the compensation temperature in GdIG/Cu/Pt heterostructures is identified unambiguously. Furthermore, the coherent and incoherent spin currents, generated by SP and the spin Seebeck effect, respectively, undergo a distinct direction change with the variation of temperature. The physical mechanisms underlying these observations are self-consistently clarified by the ferrimagnetic counterpart of SP and the handedness-related spin-wave spectra. The findings broaden the conventional paradigm of the ferromagnetic SP model and open new opportunities for exploring the ferrimagnetic magnonic devices.

High-Yield Ti3 C2 Tx MXene-MoS2 Integrated Circuits.

It is very challenging to employ solution-processed conducting films in large-area ultrathin nanoelectronics. Here, spray-coated Ti3 C2 Tx MXene films as metal contacts are successfully integrated into sub-10 nm gate oxide 2D MoS2 transistor circuits. Ti3 C2 Tx films are spray coated on glass substrates followed by vacuum annealing. Compared to the as-prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm-1 ) and a lower work function (≈4.5 eV). Besides, the annealed Ti3 C2 Tx film can be patterned through a standard cleanroom process without peeling off. The annealed Ti3 C2 Tx film shows a better band alignment for n-type transport in MoS2 channel with small work function mismatch of 0.06 eV. The MoS2 film can be uniformly transferred on the patterned Ti3 C2 Tx surface and then readily processed through the cleanroom process. A large-area array of Ti3 C2 Tx MXene-MoS2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm-thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative-channel metal-oxide-semiconductor (NMOS) inverters, and voltage-shift NMOS inverters. Overall, this work indicates the tremendous potential for solution-processed Ti3 C2 Tx MXene films in large-area 2D nanoelectronics.

Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions.

Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polarization control over Schottky barriers. However, for over a decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In2Se3 memristors. Through rational interfacial engineering, their initial Schottky barrier heights and polarization screening charges at both terminals can be delicately manipulated. This enables us to find that ferroelectric resistance switching is determined by three independent variables: ferroelectric polarization, Schottky barrier variation, and initial barrier height, as opposed to the generally reported explanation. Inspired by these findings, we demonstrate volatile and nonvolatile ferroelectric memristors with large on/off ratios above 104. Our work can be extended to other planar long-channel and vertical ultrashort-channel ferroelectric memristors to reveal their ferroelectric resistance switching regimes and improve their performances.

Chiral Helimagnetism and One-Dimensional Magnetic Solitons in a Cr-Intercalated Transition Metal Dichalcogenide.

Chiral magnets endowed with topological spin textures are expected to have promising applications in next-generation magnetic memories. In contrast to the well-studied 2D or 3D magnetic skyrmions, the authors report the discovery of 1D nontrivial magnetic solitons in a transition metal dichalcogenide 2H-TaS2 via precise intercalation of Cr elements. In the synthetic Cr1/3 TaS2 (CTS) single crystal, the coupling of the strong spin-orbit interaction from TaS2 and the chiral arrangement of the magnetic Cr ions evoke a robust Dzyaloshinskii-Moriya interaction. A magnetic helix having a short spatial period of ≈25 nm is observed in CTS via Lorentz transmission electron microscopy. In a magnetic field perpendicular to the helical axis, the helical spin structure transforms into a chiral soliton lattice (CSL) with the spin structure evolution being consistent with the chiral sine-Gordon theory, which opens promising perspectives for the application of CSL to fast-speed nonvolatile magnetic memories. This work introduces a new paradigm to soliton physics and provides an effective strategy for seeking novel 2D magnets.

General synthesis of single-atom catalysts with high metal loading using graphene quantum dots.

Transition-metal single-atom catalysts present extraordinary activity per metal atomic site, but suffer from low metal-atom densities (typically less than 5 wt% or 1 at.%), which limits their overall catalytic performance. Here we report a general method for the synthesis of single-atom catalysts with high transition-metal-atom loadings of up to 40 wt% or 3.8 at.%, representing several-fold improvements compared to benchmarks in the literature. Graphene quantum dots, later interweaved into a carbon matrix, were used as a support, providing numerous anchoring sites and thus facilitating the generation of high densities of transition-metal atoms with sufficient spacing between the metal atoms to avoid aggregation. A significant increase in activity in electrochemical CO2 reduction (used as a representative reaction) was demonstrated on a Ni single-atom catalyst with increased Ni loading.