Low-temperature co-fired ceramic (LTCC) substrate materials are widely applied in electronic components due to their excellent microwave dielectric properties. However, the absence of LTCC materials with a lower dielectric constant and higher mechanical strength restricts the creation of integrated and minified electronic devices. In this work, sol-gel-derived CaO-B2O3-SiO2 (CBS) glass/Al2O3 composites with high flexural strength and low dielectric constant were successfully prepared using the LTCC technique. Among the composites sintered at different temperatures, the composites sintered at 870 °C for 2 hours possess a dielectric constant of 6.3 (10 GHz), a dielectric loss of 0.2%, a flexural strength of 245 MPa, and a CTE of 5.3 × 10-6 K-1, demonstrating its great potential for applications in the electronic package field. By analyzing the CBS glass' physical characteristics, it was found that the sol-gel-derived glass has an extremely low dielectric constant of 3.6 and does not crystallize or react with Al2O3 at the sintering temperature, which is conducive to improving the flexural strength and reducing the dielectric constant of CBS glass/Al2O3 composites.
Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor-insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor-insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.
The discovery of magnetism in 2D materials offers new opportunities for exploring novel quantum states and developing spintronic devices. In this work, using field-effect transistors with solid ion conductors as the gate dielectric (SIC-FETs), we have observed a significant enhancement of ferromagnetism associated with magnetic easy-axis switching in few-layered Cr2 Ge2 Te6 . The easy axis of the magnetization, inferred from the anisotropic magnetoresistance, can be uniformly tuned from the out-of-plane direction to an in-plane direction by electric field in the few-layered Cr2 Ge2 Te6 . Additionally, the Curie temperature, obtained from both the Hall resistance and magnetoresistance measurements, increases from 65 to 180 K in the few-layered sample by electric gating. Moreover, the surface of the sample is fully exposed in the SIC-FET device configuration, making further heterostructure-engineering possible. This work offers an excellent platform for realizing electrically controlled quantum phenomena in a single device.
Exploration of new superconductors has always been one of the research directions in condensed matter physics. We report here a new layered heterostructure of [(Fe,Al)(OH)2][FeSe]1.2, which is synthesized by the hydrothermal ion-exchange technique. The structure is suggested by a combination of X-ray powder diffraction and the electron diffraction (ED). [(Fe,Al)(OH)2][FeSe]1.2 is composed of the alternating stacking of a tetragonal FeSe layer and a hexagonal (Fe,Al)(OH)2 layer. In [(Fe,Al)(OH)2][FeSe]1.2, there exists a mismatch between the FeSe sublayer and the (Fe,Al)(OH)2 sublayer, and the lattice of the layered heterostructure is quasi-commensurate. The as-synthesized [(Fe,Al)(OH)2][FeSe]1.2 is nonsuperconducting due to the Fe vacancies in the FeSe layer. The superconductivity with a Tc of 40 K can be achieved after a lithiation process, which is due to the elimination of the Fe vacancies in the FeSe layer. The Tc is nearly the same as that of (Li,Fe)OHFeSe although the structure of [(Fe,Al)(OH)2][FeSe]1.2 is quite different from that of (Li,Fe)OHFeSe. The new layered heterostructure of [(Fe,Al)(OH)2][FeSe]1.2 contains an iron selenium tetragonal lattice interleaved with a hexagonal metal hydroxide lattice. These results indicate that the superconductivity is very robust for FeSe-based superconductors. It opens a path for exploring superconductivity in iron-base superconductors.
Magnetism in the two-dimensional limit has become an intriguing topic for exploring new physical phenomena and potential applications. Especially, the two-dimensional magnetism is often associated with novel intrinsic spin fluctuations and versatile electronic structures, which provides vast opportunities in 2D material research. However, it is still challenging to verify candidate materials hosting two-dimensional magnetism, since the prototype systems have to be realized by using mechanical exfoliation or atomic layer deposition. Here, an alternative manipulation of two-dimensional magnetic properties via electrochemical intercalation of organic molecules is reported. Using tetrabutyl ammonium (TBA+), we synthesized a (TBA)Cr2Ge2Te6 hybrid superlattice with metallic behavior, and the Curie temperature is significantly increased from 67 K in pristine Cr2Ge2Te6 to 208 K in (TBA)Cr2Ge2Te6. Moreover, the magnetic easy axis changes from the ⟨001⟩ direction in Cr2Ge2Te6 to the ab-plane in (TBA)Cr2Ge2Te6. Theoretical calculations indicate that the drastic increase of the Curie temperature can be attributed to the change of magnetic coupling from a weak superexchange interaction in pristine Cr2Ge2Te6 to a strong double-exchange interaction in (TBA)Cr2Ge2Te6. These findings are the first demonstration of manipulation of magnetism in magnetic van der Waals materials by means of intercalating organic ions, which can serve as a convenient and efficient approach to explore versatile magnetic and electronic properties in van der Waals crystals.
