Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
Lead sulfide colloidal quantum dots (PbS CQDs) are promising optoelectronic materials due to their unique properties, such as tunable band gap and strong absorption, which are of immense interest for application in photodetectors and solar cells. However, the tunable band gap of PbS CQDs would only cover visible short-wave infrared; the ability to detect longer wavelengths, such as mid- and long-wave infrared, is limited because they are restricted by the band gap of the bulk material. In this paper, a novel photodetector based on the synergistic effect of PbS CQDs and bismuth telluride (Bi2Te3) was developed for the detection of a mid-wave infrared band at room temperature. The device demonstrated good performance in the visible-near infrared band (i.e., between 660 and 850 nm) with detectivity of 1.6 × 1010 Jones at room temperature. It also exhibited photoelectric response in the mid-wave infrared band (i.e., between 4.6 and 5.1 µm). The facile fabrication process and excellent performance (with a response of up to 5.1 µm) of the hybrid Bi2Te3/PbS CQDS photodetector are highly attractive for many important applications that require high sensitivity and broadband light detection.
Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 104 A/W and ~9.4 × 1013 Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.
Functional nanomaterials offer an attractive strategy to mimic the catalysis of natural enzymes, which are collectively called nanozymes. Although the development of nanozymes shows a trend of diversification of materials with enzyme-like activity, most nanozymes have been discovered via trial-and-error methods, largely due to the lack of predictive descriptors. To fill this gap, this work identified eg occupancy as an effective descriptor for spinel oxides with peroxidase-like activity and successfully predicted that the eg value of spinel oxide nanozymes with the highest activity is close to 0.6. The LiCo2O4 with the highest activity, which is finally predicted, has achieved more than an order of magnitude improvement in activity. Density functional theory provides a rationale for the reaction path. This work contributes to the rational design of high performance nanozymes by using activity descriptors and provides a methodology to identify other descriptors for nanozymes.
Nanostructures , Oxides , Aluminum Oxide , Magnesium Oxide , Catalysis
Heteroatom doped atomically dispersed Fe1 -NC catalysts have been found to show excellent activity toward oxygen reduction reaction (ORR). However, the origin of the enhanced activity is still controversial because the structure-function relationship governing the enhancement remains elusive. Herein, sulfur(S)-doped Fe1 -NC catalyst was obtained as a model, which displays a superior activity for ORR towards the traditional Fe-NC materials. 57 Fe Mössbauer spectroscopy and electron paramagnetic resonance spectroscopy revealed that incorporation of S in the second coordination sphere of Fe1 -NC can induce the transition of spin polarization configuration. Operando 57 Fe Mössbauer spectra definitively identified the low spin single-Fe3+ -atom of C-FeN4 -S moiety as the active site for ORR. Moreover, DFT calculations unveiled that lower spin state of the Fe center after the S doping promotes OH* desorption process. This work elucidates the underlying mechanisms towards S doping for enhancing ORR activity, and paves a way to investigate the function of broader heteroatom doped Fe1 -NC catalysts to offer a general guideline for spin-state-determined ORR.
Oxygen evolution reaction (OER) is an obstacle to the electrocatalytic water splitting due to its unique four-proton-and-electron-transfer reaction process. Many methods, such as engineering heterostructure and introducing oxygen vacancy, have been used to improve the catalytic performance of electrocatalysts for OER. Herein, the above two kinds of regulation are simultaneously realized in a catalyst by using unique ion irradiation technology. A nanosheet structured NiO/NiFe2 O4 heterostructure with rich oxygen vacancies converted from nickel-iron layered double hydroxides by Ar+ ions irradiation shows significant enhancement in both OER and hydrogen evolution reaction performance. Density functional theory (DFT) calculations reveal that the construction of NiO/NiFe2 O4 can optimize the free energy of O* to OOH* process during OER reaction. The oxygen vacancy-rich NiO/NiFe2 O4 nanosheets have an overpotential of 279 mV at 10 mA cm-2 and a low Tafel slope of 42 mV dec-1 . Moreover, this NiO/NiFe2 O4 electrode shows an excellent long-term stability at 100 mA cm-2 for 450 h. The synergetic effects between NiO and NiFe2 O4 make NiO/NiFe2 O4 heterostructure have high conductivity and fast charge transfer, abundant active sites, and high catalytic reactivity, contributing to its excellent performance.
An effective and universal strategy is developed to enhance the stability of the non-noble-metal M-Nx /C catalyst in proton exchange membrane fuel cells (PEMFCs) by improving the bonding strength between metal ions and chelating polymers, i.e., poly(acrylic acid) (PAA) homopolymer and poly(acrylic acid-maleic acid) (P(AA-MA)) copolymer with different AA/MA ratios. Mössbauer spectroscopy and X-ray absorption spectroscopy (XAS) reveal that the optimal P(AA-MA)-Fe-N catalyst with a higher Fe3+ -polymer binding constant possesses longer FeN bonds and exclusive Fe-N4 /C moiety compared to PAA-Fe-N, which consists of ≈15% low-coordinated Fe-N2 /N3 structures. The optimized P(AA-MA)-Fe-N catalyst exhibits outstanding ORR activity and stability in both half-cell and PEMFC cathodes, with the retention rate of current density approaching 100% for the first 37 h at 0.55 V in an H2 -air fuel cell. Density functional theory (DFT) calculations suggest that the Fe-N4 /C site could optimize the difference between the adsorption energy of the Fe atoms on the support (Ead ) and the bulk cohesive energy (Ecoh ) relative to Fe-N2 /N3 moieties, thereby strongly stabilizing Fe centers against demetalation.
In the present study Ar+ cluster ions accelerated by voltages in the range of 5-10 kV are used to irradiate single crystal ZnO substrates and nanorods to fabricate self-assembled surface nanoripple arrays. The ripple formation is observed when the incidence angle of the cluster beam is in the range of 30-70°. The influence of incidence angle, accelerating voltage, and fluence on the ripple formation is studied. Wavelength and height of the nanoripples increase with increasing accelerating voltage and fluence for both targets. The nanoripples formed on the flat substrates remind of aeolian sand ripples. The ripples formed at high ion fluences on the nanorod facets resemble well-ordered parallel steps or ribs. The more ordered ripple formation on nanorods can be associated with the confinement of the nanorod facets in comparison with the quasi-infinite surface of the flat substrates.
RATIONALE: Continuously downscaling integrated circuit devices requires fabrication of shallower p-n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. METHODS: In this study to carry out low-energy implantation into single crystalline silicon and 4H-SiC samples we employ Aln - (n = 1-5) clusters with energy in the range of 5-20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time-of-flight secondary ion mass spectrometry (TOF-SIMS; IONTOF TOF.SIMS-5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. RESULTS: A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. CONCLUSIONS: The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF-SIMS depth profiling of the shallow cluster implantation is feasible.
In this work an Ar+ cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 1014-2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.
Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290-400 nm) and only responsive to the UV-C band (200-290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (t rise ≈ 0.17 s and t decay ≈ 0.14 s).
A novel ion-extraction method named side extraction, i.e., extracting ions from the direction perpendicular to that of plasma expansion, is proposed in this paper, which can be used to filter ions or macro-particles for vacuum arc ion sources. Particle-in-cell simulations were performed to study filtering effects of side extraction on ions with different mass, different charges, and different initial kinetic energies. The results indicate that side extraction can separate ions by their charge states or initial kinetic energies and the extracting efficiency for different ion species is identical. Influences of extraction voltages, extraction interval, and the aspect ratio of the extraction aperture on ion filtering effects were also studied, which suggests that lower extraction voltages and longer extraction interval are beneficial for ion filtering and a high-aspect-ratio aperture contributes to the increase in the ratio of lighter ions in extracted beams. A theoretical analysis on the deflected distance of beams in the y direction was made and shows good agreement with the simulation results.
Transition metal dichalcogenide materials have been considered as promising anode materials for rechargeable sodium-ion batteries because of their high specific capacity and low cost. Here, we demonstrate an iron sulfide Fe3S4 as a new anode material for a rechargeable sodium-ion battery. The involved conversion mechanism has been proved when the as-prepared Fe3S4 was used as the host material for sodium storage. Remarkably, a compound FeS x with quantum size generated by conversion reaction overcame the kinetic and thermodynamic constraints of chemical conversion to achieve superior cycling and rate capability. As a result, the as-prepared Fe3S4 electrode delivers a high reversible specific capacity of 548 mA h g-1 at 0.2 A g-1, together with an excellent cycling stability of 275 mA h g-1 after 3500 cycles at 20 A g-1.
(Ti, Al)N/MoN and CrN/MoN multilayered films were synthesized on Si (100) surface by multi-cathodic arc ion plating system with various bilayer periods. The elemental composition and depth profiling of the films were investigated by Rutherford backscattering spectroscopy (RBS) using 2.42 and 1.52 MeV Li2+ ion beams and different incident angles (0°, 15°, 37°, and 53°). The microstructures of (Ti, Al)N/MoN multilayered films were evaluated by X-ray diffraction. The multilayer periods and thickness of the multilayered films were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) and then compared with RBS results.
