ABSTRACT
The further development of 5G and 6G communication systems introduced new frequency allocations beyond 6 GHz, necessitating the development of compact bandpass filters that can operate over wide gigahertz frequency ranges. Herein, we report on the design, fabrication, and characterization of an edge-coupled magnetostatic forward volume wave bandpass filter (MSFVW). Using micromachining techniques, we fabricate both 2-pole and 4-pole filters from a yttrium iron garnet (YIG) film grown on a gadolinium gallium garnet (GGG) substrate with inductive transducers. By adjusting an out-of-plane magnetic field, we demonstrate linear center frequency tuning for a 4th-order filter from 4.5 GHz to 10.1 GHz while retaining a fractional bandwidth of 0.3%, an insertion loss of 6.94 dB, and a - 35 dB rejection level. We characterize the filter nonlinearity in the passband and stopband with IIP3 measurements of - 4.85 dBm and 25.84 dBm, respectively. In this work, we demonstrate a compact octave tunable narrowband channel-select filter with a significant degree of design flexibility and performance comparable to the state-of-the-art.
ABSTRACT
Coherent interconversion between microwave and optical frequencies can serve as both classical and quantum interfaces for computing, communication, and sensing. Here, we present a compact microwave-optical transducer based on monolithic integration of piezoelectric actuators on silicon nitride photonic circuits. Such an actuator couples microwave signals to a high-overtone bulk acoustic resonator defined by the silica cladding of the optical waveguide core, suspended to enhance electromechanical and optomechanical couplings. At room temperature, this triply resonant piezo-optomechanical transducer achieves an off-chip photon number conversion efficiency of 1.6 × 10-5 over a bandwidth of 25 MHz at an input pump power of 21 dBm. The approach is scalable in manufacturing and does not rely on superconducting resonators. As the transduction process is bidirectional, we further demonstrate the synthesis of microwave pulses from a purely optical input. Capable of leveraging multiple acoustic modes for transduction, this platform offers prospects for frequency-multiplexed qubit interconnects and microwave photonics at large.
ABSTRACT
Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunity to interference. However, wafer-scale integration of these systems has been challenged by stringent requirements on laser coherence, frequency agility, and the necessity for optical amplifiers. Here, we demonstrate a photonic-electronic LiDAR source composed of a micro-electronic-based high-voltage arbitrary waveform generator, a hybrid photonic circuit-based tunable Vernier laser with piezoelectric actuators, and an erbium-doped waveguide amplifier. Importantly, all systems are realized in a wafer-scale manufacturing-compatible process comprising III-V semiconductors, silicon nitride photonic integrated circuits, and 130-nm SiGe bipolar complementary metal-oxide-semiconductor (CMOS) technology. We conducted ranging experiments at a 10-meter distance with a precision level of 10 cm and a 50 kHz acquisition rate. The laser source is turnkey and linearization-free, and it can be seamlessly integrated with existing focal plane and optical phased array LiDAR approaches.
ABSTRACT
Considering the evolution of rotation sensing and timing applications realized in micro-electro-mechanical systems (MEMS), flexural mode resonant shapes are outperformed by bulk acoustic wave (BAW) counterparts by achieving higher frequencies with both electrostatic and piezoelectric transduction. Within the 1-30 MHz range, which hosts BAW gyroscopes and timing references, piezoelectric and electrostatic MEMS have similar transduction efficiency. Although, when designed intelligently, electrostatic transduction allows self-alignment between electrodes and the resonator for various BAW modes, misalignment is inevitable regarding piezoelectric transduction of BAW modes that require electrode patterning. In this paper transverse piezoelectric actuation of [011] oriented single crystal lead magnesium niobate-lead titanate (PMN-PT) thin film disks are shown to excite the tangential mode and family of elliptical compound resonant modes, utilizing a self-aligned and unpatterned electrode that spans the entire disk surface. The resonant mode coupling is achieved by employing a unique property of [011] PMN-PT, where the in-plane piezoelectric coefficients have opposite signs. Fabricating 1-port disk transducers, RF reflection measurements are performed that demonstrate the compound mode family shapes in the 1-30 MHz range. Independent verification of mode transduction is achieved using in-plane displacement measurements with Polytec's laser Doppler vibrometer (LDV). While the tangential mode achieves a 40o/s dithering rate at 335 kHz resonant frequency, the n = 2 wine-glass mode achieves 11.46 nm tip displacement at 8.42 MHz resonant frequency on a radius of 60 µm disk resonator in air. A single electrode resonator that can excite both tangential and wine-glass modes with such metrics lays the foundation for a BAW MEMS gyroscope with a built-in primary calibration stage.
ABSTRACT
Quantum sensors have attracted broad interest in the quest towards sub-micronscale NMR spectroscopy. Such sensors predominantly operate at low magnetic fields. Instead, however, for high resolution spectroscopy, the high-field regime is naturally advantageous because it allows high absolute chemical shift discrimination. Here we demonstrate a high-field spin magnetometer constructed from an ensemble of hyperpolarized 13C nuclear spins in diamond. They are initialized by Nitrogen Vacancy (NV) centers and protected along a transverse Bloch sphere axis for minute-long periods. When exposed to a time-varying (AC) magnetic field, they undergo secondary precessions that carry an imprint of its frequency and amplitude. For quantum sensing at 7T, we demonstrate detection bandwidth up to 7 kHz, a spectral resolution < 100mHz, and single-shot sensitivity of 410pT[Formula: see text]. This work anticipates opportunities for microscale NMR chemical sensors constructed from hyperpolarized nanodiamonds and suggests applications of dynamic nuclear polarization (DNP) in quantum sensing.
ABSTRACT
Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ([Formula: see text]) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of [Formula: see text] defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear-nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology.
ABSTRACT
Generation of a local magnetic field at the nanoscale is desirable for many applications such as spin-qubit-based quantum memories. However, this is a challenge due to the slow decay of static magnetic fields. Here, we demonstrate a photonic spin density (PSD)-induced effective static magnetic field for an ensemble of nitrogen-vacancy (NV) centers in bulk diamond. This locally induced magnetic field is a result of coherent interaction between the optical excitation and the NV centers. We demonstrate an optically induced spin rotation on the Bloch sphere exceeding 10 degrees which has potential applications in all-optical coherent control of spin qubits.
ABSTRACT
Frequency modulated continuous wave laser ranging (FMCW LiDAR) enables distance mapping with simultaneous position and velocity information, is immune to stray light, can achieve long range, operate in the eye-safe region of 1550 nm and achieve high sensitivity. Despite its advantages, it is compounded by the simultaneous requirement of both narrow linewidth low noise lasers that can be precisely chirped. While integrated silicon-based lasers, compatible with wafer scale manufacturing in large volumes at low cost, have experienced major advances and are now employed on a commercial scale in data centers, and impressive progress has led to integrated lasers with (ultra) narrow sub-100 Hz-level intrinsic linewidth based on optical feedback from photonic circuits, these lasers presently lack fast nonthermal tuning, i.e. frequency agility as required for coherent ranging. Here, we demonstrate a hybrid photonic integrated laser that exhibits very narrow intrinsic linewidth of 25 Hz while offering linear, hysteresis-free, and mode-hop-free-tuning beyond 1 GHz with up to megahertz actuation bandwidth constituting 1.6 × 1015 Hz/s tuning speed. Our approach uses foundry-based technologies - ultralow-loss (1 dB/m) Si3N4 photonic microresonators, combined with aluminium nitride (AlN) or lead zirconium titanate (PZT) microelectromechanical systems (MEMS) based stress-optic actuation. Electrically driven low-phase-noise lasing is attained by self-injection locking of an Indium Phosphide (InP) laser chip and only limited by fundamental thermo-refractive noise at mid-range offsets. By utilizing difference-drive and apodization of the photonic chip to suppress mechanical vibrations of the chip, a flat actuation response up to 10 MHz is achieved. We leverage this capability to demonstrate a compact coherent LiDAR engine that can generate up to 800 kHz FMCW triangular optical chirp signals, requiring neither any active linearization nor predistortion compensation, and perform a 10 m optical ranging experiment, with a resolution of 12.5 cm. Our results constitute a photonic integrated laser system for scenarios where high compactness, fast frequency actuation, and high spectral purity are required.
ABSTRACT
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
ABSTRACT
We have designed, fabricated, and characterized magnetostatic wave (MSW) resonators on a chip. The resonators are fabricated by patterning single-crystal yttrium iron garnet (YIG) film on a gadolinium gallium garnet (GGG) substrate and excited by loop-inductor transducers. We achieved this technology breakthrough by developing a YIG film etching process and fabricating thick aluminum coplanar waveguide (CPW) inductor loop around each resonator to individually address and excite MSWs. At 4.77 GHz, the 0.68-mm2 resonator achieves a quality factor ( with a bias field of 987 Oe. We also demonstrate YIG resonator tuning by more than one octave from 3.63 to 7.63 GHz by applying an in-plane external magnetic field. The measured quality factor of the resonator is consistently over 3000 above 4 GHz. The micromachining technology enables the fabrication of multiple single- and two-port YIG resonators on the same chip with all resonators demonstrating octave tunability and high Q .
ABSTRACT
High-speed actuation of laser frequency1 is critical in applications using lasers and frequency combs2,3, and is a prerequisite for phase locking, frequency stabilization and stability transfer among optical carriers. For example, high-bandwidth feedback control of frequency combs is used in optical-frequency synthesis4, frequency division5 and optical clocks6. Soliton microcombs7,8 have emerged as chip-scale frequency comb sources, and have been used in system-level demonstrations9,10. Yet integrated microcombs using thermal heaters have limited actuation bandwidths11,12 of up to 10 kilohertz. Consequently, megahertz-bandwidth actuation and locking of microcombs have only been achieved with off-chip bulk component modulators. Here we demonstrate high-speed soliton microcomb actuation using integrated piezoelectric components13. By monolithically integrating AlN actuators14 on ultralow-loss Si3N4 photonic circuits15, we demonstrate voltage-controlled soliton initiation, tuning and stabilization with megahertz bandwidth. The AlN actuators use 300 nanowatts of power and feature bidirectional tuning, high linearity and low hysteresis. They exhibit a flat actuation response up to 1 megahertz-substantially exceeding bulk piezo tuning bandwidth-that is extendable to higher frequencies by overcoming coupling to acoustic contour modes of the chip. Via synchronous tuning of the laser and the microresonator, we exploit this ability to frequency-shift the optical comb spectrum (that is, to change the comb's carrier-envelope offset frequency) and make excursions beyond the soliton existence range. This enables a massively parallel frequency-modulated engine16,17 for lidar (light detection and ranging), with increased frequency excursion, lower power and elimination of channel distortions resulting from the soliton Raman self-frequency shift. Moreover, by modulating at a rate matching the frequency of high-overtone bulk acoustic resonances18, resonant build-up of bulk acoustic energy allows a 14-fold reduction of the required driving voltage, making it compatible with CMOS (complementary metal-oxide-semiconductor) electronics. Our approach endows soliton microcombs with integrated, ultralow-power and fast actuation, expanding the repertoire of technological applications of microcombs.
ABSTRACT
Integrated photonic devices based on Si3N4 waveguides allow for the exploitation of nonlinear frequency conversion, exhibit low propagation loss, and have led to advances in compact atomic clocks, ultrafast ranging, and spectroscopy. Yet, the lack of Pockels effect presents a major challenge to achieve high-speed modulation of Si3N4. Here, microwave-frequency acousto-optic modulation is realized by exciting high-overtone bulk acoustic wave resonances (HBAR) in the photonic stack. Although HBAR is ubiquitously used in modern communication and superconducting circuits, this is the first time it has been incorporated on a photonic integrated chip. The tight vertical acoustic confinement releases the lateral design of freedom, and enables negligible cross-talk and preserving low optical loss. This hybrid HBAR nanophotonic platform can find immediate applications in topological photonics with synthetic dimensions, compact opto-electronic oscillators, and microwave-to-optical converters. As an application, a Si3N4-based optical isolator is demonstrated by spatiotemporal modulation, with over 17 dB isolation achieved.
ABSTRACT
Silicon nitride (Si_{3}N_{4}) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore, understanding all nonlinear optical properties of Si_{3}N_{4} is important. So far, only stimulated Brillouin scattering (SBS) has not yet been reported. Here we observe, for the first time, backward SBS in fully cladded Si_{3}N_{4} waveguides. The Brillouin gain spectrum exhibits an unusual multipeak structure resulting from hybridization with high-overtone bulk acoustic resonances of the silica cladding. The reported intrinsic Si_{3}N_{4} Brillouin gain at 25 GHz is estimated as 4×10^{-13} m/W. Moreover, the magnitude of the Si_{3}N_{4} photoelastic constant is estimated as |p_{12}|=0.047±0.004, which is nearly 6 times smaller than for silica. Since SBS imposes an optical power limitation for waveguides, our results explain the capability of Si_{3}N_{4} to handle high optical power, central for integrated nonlinear photonics.
ABSTRACT
Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, a diamond high-overtone bulk acoustic resonator (HBAR), features an integrated piezoelectric transducer and supports high-quality factor resonance modes into the gigahertz frequency range. The acoustic modes allow mechanical manipulation of deeply embedded NV centers with long spin and orbital coherence times. Unfortunately, the spin-phonon coupling rate is limited by the large resonator size, >100 µm, and thus strongly coupled NV electron-phonon interactions remain out of reach in current diamond BAR devices. Here, we report the design and fabrication of a semiconfocal HBAR (SCHBAR) device on diamond (silicon carbide) with f × Q > 1012 (>1013). The semiconfocal geometry confines the phonon mode laterally below 10 µm. This drastic reduction in modal volume enhances defect center coupling to a mechanical mode by 1000 times compared to prior HBAR devices. For the native NV centers inside the diamond device, we demonstrate mechanically driven spin transitions and show a high strain-driving efficiency with a Rabi frequency of (2π)2.19(14) MHz/Vp, which is comparable to a typical microwave antenna at the same microwave power, making SCHBAR a power-efficient device useful for fast spin control, dressed state coherence protection, and quantum circuit integration.
ABSTRACT
This paper reports on a novel simulation method combining the speed of analytical evaluation with the accuracy of finite-element analysis (FEA). This method is known as the rapid analytical-FEA technique (RAFT). The ability of the RAFT to accurately predict frequency response orders of magnitude faster than conventional simulation methods while providing deeper insights into device design not possible with other types of analysis is detailed. Simulation results from the RAFT across wide bandwidths are compared to measured results of resonators fabricated with various materials, frequencies, and topologies with good agreement. These include resonators targeting beam extension, disk flexure, and Lamé beam modes. An example scaling analysis is presented and other applications enabled are discussed as well. The supplemental material includes example code for implementation in ANSYS, although any commonly employed FEA package may be used.
ABSTRACT
This paper reports on a general analytical expression for the motional resistance ( ) of an arbitrary mode in a piezoelectric microelectromechanical system resonator with parallel plate electrode geometry. After applying simplifying assumptions and using analytical modes shapes, expressions for the of modes with out-of-plane flexure as the primary displacement are presented. These modes include free-free transverse beam flexure (TBF), unclamped disk flexure resonators (DFRs), and antisymmetric Lamb modes. For verification, is extracted from resonators fabricated in a lead zirconate titanate on silicon process. Predicted of TBF and DFR modes is validated using on-wafer extracted constants, analytical modal properties, and independently measured material properties.
ABSTRACT
This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In such magneto acoustic spin Hall (MASH) oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) that arise from a spin-orbit torque (SOT) are shaped by the transmission response of the HBAR that acts as a multiple peak-bandpass filter and a delay element due to its large time constant, providing delayed feedback. The filtered voltage oscillations can be fed back to the MTJ via (a) strain, (b) current, or (c) magnetic field. We develop a SPICE-based circuit model by combining experimentally benchmarked models including the stochastic Landau-Lifshitz-Gilbert (sLLG) equation for magnetization dynamics and the Butterworth Van Dyke (BVD) circuit for the HBAR. Using the self-consistent model, we project up to ~50X enhancement in the oscillator linewidth with Q reaching up to 52825 at 3 GHz, while preserving the tunability by locking the STNO to the nearest high Q peak of the HBAR. We expect that our results will inspire MEMS-based solutions to spintronic devices by combining attractive features of both fields for a variety of applications.
ABSTRACT
Optomechanical systems have enabled wide-band optical frequency conversion and multichannel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon microresonator, which converts near-IR optical intensity modulation at 174.2 MHz and 1.198 GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors. While the results presented here constitute a purely classical demonstration, the device can also potentially be extended to the quantum regime to realize a photon-phonon translator.
ABSTRACT
Finite photon lifetimes for light fields in an opto-mechanical cavity impose a bandwidth limit on displacement sensing at mechanical resonance frequencies beyond the loaded cavity photon decay rate. Opto-mechanical modulation efficiency can be enhanced via multi-GHz transduction techniques such as piezo-opto-mechanics at the cost of on-chip integration. In this paper, we present a novel high bandwidth displacement sense scheme employing Rayleigh scattering in photonic resonators. Using this technique in conjunction with on-chip electrostatic drive in silicon enables efficient modulation at frequencies up to 9.1GHz. Being independent of the drive mechanism, this scheme could readily be extended to piezo-opto-mechanical and all optical transduced systems.
ABSTRACT
This paper reports theoretical analysis and experimental results on a numerical electrode shaping design technique that permits the excitation of arbitrary modes in arbitrary geometries for piezoelectric resonators, for those modes permitted to exist by the nonzero piezoelectric coefficients and electrode configuration. The technique directly determines optimal electrode shapes by assessing the local suitability of excitation and detection electrode placement on two-port resonators without the need for iterative numerical techniques. The technique is demonstrated in 61 different electrode designs in lead zirconate titanate (PZT) thin film on silicon RF micro electro-mechanical system (MEMS) plate, beam, ring, and disc resonators for out-of-plane flexural and various contour modes up to 200 MHz. The average squared effective electromechanical coupling factor for the designs was 0.54%, approximately equivalent to the theoretical maximum value of 0.53% for a fully electroded length-extensional mode beam resonator comprised of the same composite. The average improvement in S(21) for the electrode-shaped designs was 14.6 dB with a maximum improvement of 44.3 dB. Through this piezoelectric electrodeshaping technique, 95% of the designs showed a reduction in insertion loss.