Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides.

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III-V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

Hollow silicon microneedles, fabricated using combined wet and dry etching techniques, for transdermal delivery and diagnostics.

Microneedle-based technologies are the subject of intense research and commercial interest for applications in transdermal delivery and diagnostics, primarily because of their minimally invasive and painless nature, which in turn could lead to increased patient compliance and self-administration. In this paper, a process for the fabrication of arrays of hollow silicon microneedles is described. This method uses just two bulk silicon etches - a front-side wet etch to define the 500 µm tall octagonal needle structure itself, and a rear-side dry etch to create a 50 µm diameter bore through the needle. This reduces the number of etches and process complexity over the approaches described elsewhere. Ex-vivo human skin and a customised applicator were used to demonstrate biomechanical reliability and the feasibility of using these microneedles for both transdermal delivery and diagnostics. Microneedle arrays show no damage even when applied to skin up to 40 times, are capable of delivering several mL of fluid at flowrates of 30 µL/min, and of withdrawing 1 µL of interstitial fluid using capillary action.

Direct-write formation of integrated bottom contacts to laser-induced graphene-like carbon.

We report a simple, scalable two-step method for direct-write laser fabrication of 3D, porous graphene-like carbon electrodes from polyimide films with integrated contact plugs to underlying metal layers (Au or Ni). Irradiation at high average CO2laser power (30 W) and low scan speed (∼18 mm s)-1leads to formation of 'keyhole' contact plugs through local ablation of polyimide (initial thickness 17µm) and graphitization of the plug perimeter wall. Top-surface laser-induced graphene (LIG) electrodes are then formed and connected to the plug by raster patterning at lower laser power (3.7 W) and higher scan speed (200 mm s)-1. Sheet resistance data (71 ± 15 Ω sq.)-1indicates formation of high-quality surface LIG, consistent with Raman data which yield sharp first- and second-order peaks. We have also demonstrated that high-quality LIG requires a minimum initial polyimide thickness. Capacitance data measured between surface LIG electrodes and the buried metal film indicate a polyimide layer of thickness ∼7µm remaining following laser processing. By contrast, laser graphitization of polyimide of initial thickness ∼8µm yielded devices with large sheet resistance (>1 kΩ sq.)-1. Raman data also indicated significant disorder. Plug contact resistance values were calculated from analysis of transfer line measurement data for single- and multi-plug test structures. Contacts to buried nickel layers yielded lower plug resistances (1-plug: 158 ± 7 Ω , 4-plug: 31 ± 14 Ω) compared to contacts to buried gold (1-plug: 346 ± 37 Ω , 4-plug: 52 ± 3 Ω). Further reductions are expected for multi-plug structures with increased areal density. Proof-of-concept mm-scale LIG electrochemical devices with local contact plugs yielded rapid electron transfer kinetics (rate constantk0 âˆ¼ 0.017 cm s-1), comparable to values measured for exposed Au films (k0 âˆ¼0.023 cm s)-1. Our results highlight the potential for integration of LIG-based sensor electrodes with semiconductor or roll-to-roll manufacturing.

Severe infections in neurocritical care.

PURPOSE OF REVIEW: We have highlighted the recent advances in infection in neurocritical care. RECENT FINDINGS: Central nervous system (CNS) infections, including meningitis, encephalitis and pyogenic brain infections represent a significant cause of ICU admissions. We underwent an extensive review of the literature over the last several years in order to summarize the most important points in the diagnosis and treatment of severe infections in neurocritical care. SUMMARY: Acute brain injury triggers an inflammatory response that involves a complex interaction between innate and adaptive immunity, and there are several factors that can be implicated, such as age, genetic predisposition, the degree and mechanism of the injury, systemic and secondary injury and therapeutic interventions. Neuroinflammation is a major contributor to secondary injury. The frequent and challenging presence of fever is a common denominator amongst all neurocritical care patients.

Clinical and biochemical characteristics of patients admitted to ICU with SARS-CoV-2 / Características clínicas y bioquímicas de pacientes ingresados en UCI con SARS-CoV-2

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Ion-transfer electrochemistry at arrays of nanointerfaces between immiscible electrolyte solutions confined within silicon nitride nanopore membranes.

Ion transfer across interfaces between immiscible liquids provides a means for the nonredox electrochemical detection of ions. Miniaturization of such interfaces brings the benefits of enhanced mass transport. Here, the electrochemical behavior of geometrically regular arrays of nanoscale interfaces between two immiscible electrolyte solutions (nanoITIES arrays) is presented. These were prepared by supporting the two electrolyte phases within silicon nitride membranes containing engineered arrays of nanopores. The nanoITIES arrays were characterized by cyclic voltammetry of the interfacial transfer of tetraethylammonium cation (TEA(+)) between the aqueous phase and the gelled organic phase. Effects of pore radius, pore center-to-center separation, and number of pores in the array were examined. The ion transfer produced apparent steady-state voltammetry on the forward and reverse sweeps at all experimentally accessible scan rates and at all nanopore array designs. However, background-subtraction of the voltammograms revealed the evolution of a peak-shaped response on the reverse sweep with increasing scan rate, indicative of pores filled with the organic phase to a certain extent. The steady-state voltammetric behavior at the nanoITIES arrays on the forward sweep for arrays with significant diffusion zone overlap between adjacent nanoITIES is indicative of the dominance of radial diffusion to interfaces at the edge of the arrays over linear diffusion to interfaces within the arrays. This implies that nanoITIES arrays, which occupy an overall area of micrometer dimensions, behave like a single microITIES of corresponding area to the nanoITIES array.

Nanowire transistors without junctions.

All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

Ice-Water Immersion and Cold-Water Immersion Provide Similar Cooling Rates in Runners With Exercise-Induced Hyperthermia.

OBJECTIVE: To assess whether ice-water immersion or cold-water immersion is the more effective treatment for rapidly cooling hyperthermic runners. DESIGN AND SETTING: 17 heat-acclimated highly trained distance runners (age = 28 +/- 2 years, height = 180 +/- 2 cm, weight = 68.5 +/- 2.1 kg, body fat = 11.2 +/- 1.3%, training volume = 89 +/- 10 km/wk) completed a hilly trail run (approximately 19 km and 86 minutes) in the heat (wet-bulb globe temperature = 27 +/- 1 degrees C) at an individually selected "comfortable" pace on 3 occasions 1 week apart. The random, crossover design included (1) distance run, then 12 minutes of ice-water immersion (5.15 +/- 0.20 degrees C), (2) distance run, then 12 minutes of cold-water immersion (14.03 +/- 0.28 degrees C), or (3) distance run, then 12 minutes of mock immersion (no water, air temperature = 28.88 +/- 0.76 degrees C). MEASUREMENTS: Each subject was immersed from the shoulders to the hip joints for 12 minutes in a tub. Three minutes elapsed between the distance run and the start of immersion. Rectal temperature was recorded at the start of immersion, at each minute of immersion, and 3, 6, 10, and 15 minutes postimmersion. No rehydration occurred during any trial. RESULTS: Length of distance run, time to complete distance run, rectal temperature, and percentage of dehydration after distance run were similar (P >.05) among all trials, as was the wet-bulb globe temperature. No differences (P >.05) for cooling rates were found when comparing ice-water immersion, cold-water immersion, and mock immersion at the start of immersion to 4 minutes, 4 to 8 minutes, and the start of immersion to 8 minutes. Ice-water immersion and cold-water immersion cooling rates were similar (P >.05) to each other and greater (P <.05) than mock immersion at 8 to 12 minutes, the start of immersion to 10 minutes, and the start of immersion to every other time point thereafter. Rectal temperatures were similar (P >.05) between ice-water immersion and cold-water immersion at the completion of immersion and 15 minutes postimmersion, but ice-water immersion rectal temperatures were less (P <.05) than cold-water immersion at 6 and 10 minutes postimmersion. CONCLUSIONS: Cooling rates were nearly identical between ice-water immersion and cold-water immersion, while both were 38% more effective in cooling after 12 minutes of immersion than the mock-immersion trial. Given the similarities in cooling rates and rectal temperatures between ice-water immersion and cold-water immersion, either mode of cooling is recommended for treating the hyperthermic individual.