1.
Nanotechnology
; 23(22): 225304, 2012 Jun 08.
Article
in English
| MEDLINE
| ID: mdl-22572120
ABSTRACT
The fabrication of a cross-wire p-i-n light emitting diode (LED) by molecular beam epitaxial overgrowth on mesa-patterned GaAs(100) substrates is presented. Micron-wide mesa stripes fabricated by standard photolithography are subsequently narrowed to sub-micron dimensions by GaAs overgrowth due to net migration towards the mesa top. Chains of InAs quantum dots (QDs) can then be grown in a self-aligned manner on top of the narrow GaAs ridge mesa, forming the active region of the QD-chain LED. The kinetics of the overgrowth is discussed and the electroluminescence operation of the LED is presented.