Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr.

This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal splitting in both the conduction and valence bands but also highlight a significant advance in our understanding of the interplay between the optical, electronic, and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions.

Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal-boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well as the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.

Heavy Metal Stabilization of DNA Origami Nanostructures.

DNA origami is a powerful tool to fold 3-dimensional DNA structures with nanometer precision. Its usage, however, is limited as high ionic strength, temperatures below ∼60 °C, and pH values between 5 and 10 are required to ensure the structural integrity of DNA origami nanostructures. Here, we demonstrate a simple and effective method to stabilize DNA origami nanostructures against harsh buffer conditions using [PdCl4]2-. It provided the stabilization of different DNA origami nanostructures against mechanical compression, temperatures up to 100 °C, double-distilled water, and pH values between 4 and 12. Additionally, DNA origami superstructures and bound cargos are stabilized with yields of up to 98%. To demonstrate the general applicability of our approach, we employed our protocol with a Pd metallization procedure at elevated temperatures. In the future, we think that our method opens up new possibilities for applications of DNA origami nanostructures beyond their usual reaction conditions.

Lane formation of colloidal particles driven in parallel by gravity.

We investigate the lane formation in nonequilibrium systems of colloidal particles moving in parallel that are driven by the force of gravity. For this setup, an experimental implementation of a channel on a slope can be conceptualized. We employ the Brownian dynamics algorithm and confine the repulsive particles with hard walls based on the solution of the Smoluchowski equation in the half space. A difference of the driving force acting on the colloids could be achieved by using two spherical particle types with differing diameters but equal mass density. First, we investigate how a difference in the channel slope affects the lane formation of the systems, after which we analyze the lanes that formed. We find that the large particles push the small particles to the walls, resulting in exclusively small particle lanes at the walls. This contrasts the equilibrium state, where depletion forces push the larger particles to the walls. Additionally, we have a closer look at the mechanisms by which the lanes form. Finally, we find system parameter values that foster lane formation to lay the foundation for an experimental realization of our proposed setup. To round this off, we give an exemplary calculation of the slope angle needed to get the experimental system into a state of lane order. With the examination of lane order in systems that are driven in parallel, we hope to deepen our understanding of nonequilibrium order phenomena.

Metallic Nanowires Self-Assembled in Quasi-Circular Nanomolds Templated by DNA Origami.

The self-assembly of conducting nanostructures is currently being investigated intensively in order to evaluate the feasibility of creating novel nanoelectronic devices and circuits using such pathways. In particular, methods based on so-called DNA Origami nanostructures have shown great potential in the formation of metallic nanowires. The main challenge of this method is the reproducible generation of very well-connected metallic nanostructures, which may be used as interconnects in future devices. Here, we use a novel design of nanowires with a quasi-circular cross-section as opposed to rectangular or uncontrolled cross-sections in earlier studies. We find indications that the reliability of the fabrication scheme is enhanced and the overall resistance of the wires is comparable to metallic nanostructures generated by electrochemistry or top-down methods. In addition, we observe that some of the nanowires are annealed when passing a current through them, which leads to a clear enhancement for the conductance. We envision that these nanowires provide further steps towards the successful generation of nanoelectronics using self-assembly.

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands.

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization.

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si-hBN RFETs with different gating architectures showed a significant improvement in the device's electrical parameters due to the encapsulation and passivation of the nanowire with the hBN flake. Both n- and p-type characteristics measured through the top gate exhibited a reduction of hysteresis by 10-20 V and an increase in the on-off ratio (ION/IOFF) by 1 order of magnitude (up to 108) compared to the values measured for unpassivated nanowire. Specifically, the hBN encapsulation provided improved electrostatic top gate coupling, which is reflected in the enhanced subthreshold swing values of the devices. For a single nanowire, an improvement up to 0.97 and 0.5 V/dec in the n- and p-conduction, respectively, is observed. Due to their dynamic switching and polarity control, RFETs boast great potential in reducing the device count, lowering power consumption, and playing a crucial role in advanced electronic circuitry. The concept of mixed-dimensional RFET could further strengthen its functionality, opening up new pathways for future electronics.

Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials.

Van der Waals materials exhibit intriguing properties for future electronic and optoelectronic devices. As those unique features strongly depend on the materials' thickness, it has to be accessed precisely for tailoring the performance of a specific device. In this study, a nondestructive and technologically easily implementable approach for accurate thickness determination of birefringent layered materials is introduced by combining optical reflectance measurements with a modular model comprising a 4×4 transfer matrix method and the optical components relevant to light microspectroscopy. This approach is demonstrated being reliable and precise for thickness determination of anisotropic materials like highly oriented pyrolytic graphite and black phosphorus in a range from atomic layers up to more than 100 nm. As a key feature, the method is well-suited even for encapsulated layers outperforming state of-the-art techniques like atomic force microscopy.

Stretch Evolution of Electronic Coupling of the Thiophenyl Anchoring Group with Gold in Mechanically Controllable Break Junctions.

The current-voltage characteristics of a single-molecule junction are determined by the electronic coupling Γ between the electronic states of the electrodes and the dominant transport channel(s) of the molecule. Γ is profoundly affected by the choice of the anchoring groups and their binding positions on the tip facets and the tip-tip separation. In this work, mechanically controllable break junction experiments on the N,N'-bis(5-ethynylbenzenethiol-salicylidene)ethylenediamine are presented, in particular, the stretch evolution of Γ with increasing tip-tip separation. The stretch evolution of Γ is characterized by recurring local maxima and can be related to the deformation of the molecule and sliding of the anchoring groups above the tip facets and along the tip edges. A dynamic simulation approach is implemented to model the stretch evolution of Γ, which captures the experimentally observed features remarkably well and establishes a link to the microscopic structure of the single-molecule junction.

Wafer-scale nanofabrication of telecom single-photon emitters in silicon.

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon.

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.

Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n-p Type-II Heterostructures.

Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (Rmax) of 52 mA W-1 and an external quantum efficiency (EQEmax) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing.

Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSix phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations.

Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence.

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm2/(Vs) and 4×1019cm-3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.

Complex Metal Nanostructures with Programmable Shapes from Simple DNA Building Blocks.

Advances in DNA nanotechnology allow the design and fabrication of highly complex DNA structures, uisng specific programmable interactions between smaller nucleic acid building blocks. To convey this concept to the fabrication of metallic nanoparticles, an assembly platform is developed based on a few basic DNA structures that can serve as molds. Programming specific interactions between these elements allows the assembly of mold superstructures with a range of different geometries. Subsequent seeded growth of gold within the mold cavities enables the synthesis of complex metal structures including tightly DNA-caged particles, rolling-pin- and dumbbell-shaped particles, as well as T-shaped and loop particles with high continuity. The method further supports the formation of higher-order assemblies of the obtained metal geometries. Based on electrical and optical characterizations, it is expected that the developed platform is a valuable tool for a self-assembly-based fabrication of nanoelectronic and nanooptic devices.

Control over self-assembled Janus clusters by the strength of magnetic field in [Formula: see text].

Colloidal Janus microparticles can be propelled by controlled chemical reactions on their surfaces. Such microswimmers have been used as model systems for the behavior on the microscale and as carriers for cargo to well-defined positions in hard-to-access areas. Here we demonstrate the propagation motion of clusters of magnetic Janus particles driven by the catalytic decomposition of [Formula: see text] on their metallic caps. The magnetic moments of their caps lead to certain spatial arrangements of Janus particles, which can be influenced by external magnetic fields. We investigate how the arrangement of the particles and caps determines the driven motion of the particle clusters. In addition, we show the influence of confining walls on the cluster motion, which will be encountered in any real-life biological system.

Fabrication and temperature-dependent electrical characterization of a C-shape nanowire patterned by a DNA origami.

We introduce a method based on directed molecular self-assembly to manufacture and electrically characterise C-shape gold nanowires which clearly deviate from typical linear shape due to the design of the template guiding the assembly. To this end, gold nanoparticles are arranged in the desired shape on a DNA-origami template and enhanced to form a continuous wire through electroless deposition. C-shape nanowires with a size below 150nm on a [Formula: see text] substrate are contacted with gold electrodes by means of electron beam lithography. Charge transport measurements of the nanowires show hopping, thermionic and tunneling transports at different temperatures in the 4.2K to 293K range. The different transport mechanisms indicate that the C-shape nanowires consist of metallic segments which are weakly coupled along the wires.

Sensitivity of PS/CoPd Janus particles to an external magnetic field.

The dual nature of Janus particles confers fascinating properties such as a response to multiple stimuli. In this communication, we systematically study the sensitivity to a uniform external magnetic field of isolated Janus rod-shaped and spherical particles in water confined to two dimensions. The Janus asymmetry of the particles is given by magnetic [Co(0.28 nm)/Pd(0.90 nm)]8 multilayer films deposited onto monodisperse polystyrene (PS) nanorods and microspheres, respectively. It is shown that the particles dispersed in water respond to weak magnetic field applied in in-plane direction. Here we demonstrate that a precise control of the in-plane particle orientation can be obtained for magnetic field strengths higher than 0.1 mT for microspheres and 0.4 mT for nanorods.

Negative resistance for colloids driven over two barriers in a microchannel.

When considering the flow of currents through obstacles, one core expectation is that the total resistance of sequential single resistors is additive. While this rule is most commonly applied to electronic circuits, it also applies to other transport phenomena such as the flow of colloids or nanoparticles through channels containing multiple obstacles, as long as these obstacles are sufficiently far apart. Here we explore the breakdown of this additivity for fluids of repulsive colloids driven over two energetic barriers in a microchannel, using real-space microscopy experiments, particle-resolved simulations, and dynamical density functional theory. If the barrier separation is comparable to the particle correlation length, the resistance is highly non-additive, such that the resistance added by the second barrier can be significantly higher or lower than that of the first. Surprisingly, in some cases the second barrier can even add a negative resistance, such that two identical barriers are easier to cross than a single one. We explain this counterintuitive observation in terms of the structuring of particles trapped between the barriers.

Comparative Studies of Light-Responsive Swimmers: Janus Nanorods versus Spherical Particles.

The shape of objects has a strong influence on their dynamics. Here, we present comparative studies of two different motile objects, spherical Ag/AgCl Janus particles and polystyrene Janus nanorods, that move due to an ionic self-diffusiophoretic propulsion mechanism when exposed to blue light. In this paper, we propose a method to fabricate Janus rodlike particles with high aspect ratios and hemispherical tip shapes. The inherent asymmetry due to the ratio between capped and uncapped parts of the particles as well as the shape anistropy of Janus nanorods enables imaging and quantification of rotational dynamics. The dynamics of microswimmers are compared in terms of velocities and diffusion coefficients. We observe that despite a small amount of the Ag/AgCl reagent on the surface of rodlike objects, these new Janus micromotors reveal high motility in pure water. While the velocities of spherical particles reach 4.2 µm/s, the single rodlike swimmers reach 1.1 µm/s, and clusters reach 1.6 µm/s. The effect of suppressed rotational diffusion is discussed as one of the reasons for the increased velocities. These Janus micro- and nanomotors hold the promise for application in light-controlled propulsion transport.