Piezoelectricity of Bi2Se3 Nanosheet.

Bi2Se3, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer Bi2Se3 nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of Bi2Se3 is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of Bi2Se3 two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the Bi2Se3 nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer Bi2Se3 nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators.

Defect engineering of two-dimensional Nb-based oxynitrides for visible-light-driven water splitting to produce H2 and O2.

Two-dimensional (2D) Nb-based oxynitrides are promising visible-light-responsive photocatalysts for the water splitting reaction, but their photocatalytic activity is degraded by the formation of reduced Nb5+ species and O2- vacancies. To understand the influence of nitridation on the formation of crystal defects, this study synthesized a series of Nb-based oxynitrides through the nitridation of LaKNaNb1-xTaxO5 (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0). During nitridation, K and Na species volatilized, which helped transform the exterior of LaKNaNb1-xTaxO5 into a lattice-matched oxynitride shell. Ta inhibited defect formation, yielding Nb-based oxynitrides with a tunable bandgap between 1.77 and 2.12 eV, straddling the H2 and O2 evolution potentials. After loading with Rh and CoOx cocatalysts, these oxynitrides exhibited good photocatalytic activity for H2 and O2 evolution in visible light (650-750 nm). The nitrided LaKNaTaO5 and LaKNaNb0.8Ta0.2O5 delivered the maximum H2 (19.37 µmol h-1) and O2 (22.81 µmol h-1) evolution rates, respectively. This work provides a strategy for preparing oxynitrides with low defect densities and demonstrates the promising performance of Nb-based oxynitrides for water splitting.

Preparation of mesoporous nitrogen-doped titania comprising large crystallites with low thermal conductivity.

Reducing the thermal conductivity (κ) of mesoporous N-doped titania (TiO2) is crucial for the development of TiO2-based materials that exhibit excellent electronic, photochemical, and thermoelectric properties. Mesopores can contribute to the reduction of κ via phonon scattering, and the scattering effect due to the randomness of crystal interfaces should be significantly reduced to clarify the role of mesopores in reducing thermal conductivity. Highly ordered mesoporous N-doped TiO2 comprising large crystallites was prepared with silica colloidal crystals as a template into which a Ti source was introduced, followed by calcination with urea. N-doped samples comprising large crystallites exhibiting random mesopores were also prepared and used for the investigation of the effects of the shape and arrangement of the mesopore on phonon scattering. The mesostructures of the two separately prepared N-doped TiO2 samples were retained after sintering at 873 K and 80 MPa to fabricate pellets. Furthermore, the effective suppression of the long mean-free-path phonon conduction by the thin pore walls at a nanometer scale thickness significantly reduced the thermal conductivities of both samples. The presence of ordered mesopores further contributed to the reduction of κ, which was probably due to the enhanced contribution of the backscattering of phonons caused by ordered pore wall surfaces.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions.

CuInP2S6 (CIPS) is a novel two-dimensional (2D) van der Waals (vdW) ferroelectric layered material with a Curie temperature of TC~315 K, making it promising for great potential applications in electronic and photoelectric devices. Herein, the ferroelectric and electric properties of CIPS at different thicknesses are carefully evaluated by scanning probe microscopy techniques. Some defects in some local regions due to Cu deficiency lead to a CuInP2S6-In4/3P2S6 (CIPS-IPS) paraelectric phase coexisting with the CIPS ferroelectric phase. An electrochemical strain microscopy (ESM) study reveals that the relaxation times corresponding to the Cu ions and the IPS ionospheres are not the same, with a significant difference in their response to DC voltage, related to the rectification effect of the ferroelectric tunnel junction (FTJ). The electric properties of the FTJ indicate Cu+ ion migration and propose that the current flow and device performance are dynamically controlled by an interfacial Schottky barrier. The addition of the ferroelectricity of CIPS opens up applications in memories and sensors, actuators, and even spin-orbit devices based on 2D vdW heterostructures.

Flexible n-Type Abundant Chalcopyrite/PEDOT:PSS/Graphene Hybrid Film for Thermoelectric Device Utilizing Low-Grade Heat.

Combining inorganic thermoelectric (TE) materials with conductive polymers is one promising strategy to develop flexible thermoelectric (FTE) films and devices. As most inorganic materials tried up until now in FTE composites are composed of scarce or toxic elements, and n-type FTE materials are particularly desired, we combined the abundant, inexpensive, nontoxic Zn-doped chalcopyrite (Cu1-xZnxFeS2, x = 0.01, 0.02, 0.03) with a flexible electrical network constituted by poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) and graphene for n-type FTE films. Hybrid films from the custom design of binary Cu1-xZnxFeS2/PEDOT:PSS to the optimum design of ternary Cu0.98Zn0.02FeS2/PEDOT:PSS/graphene are characterized. Compared with the binary film, a 4-fold enhancement in electrical conductivity was observed in the ternary film, leading to a maximum power factor of ∼ 23.7 µW m-1 K-2. The optimum ternary film could preserve >80% of the electrical conductivity after 2000 bending cycles, exhibiting an exceptional flexibility due to the network constructed by PEDOT:PSS and graphene. A five-leg thermoelectric prototype made of optimum films generated a voltage of 4.8 mV with a ΔT of 13 °C. Such an evolution of an inexpensive chalcopyrite-based hybrid film with outstanding flexibility exhibits the potential for cost-sensitive FTE applications.

Preparation of Ordered Nanoporous Indium Tin Oxides with Large Crystallites and Individual Control over Their Thermal and Electrical Conductivities.

Metal oxides are considered suitable candidates for thermoelectric materials owing to their high chemical stabilities. The formation of ordered nanopores within these materials, which decreases thermal conductivity (κ), has attracted significant interest. However, the electrical conductivity (σ) of reported nanoporous metal oxides is low, owing to electron scattering at the thin pore walls and many grain boundaries formed by small crystallites. Therefore, a novel synthesis method that can control pore walls while forming relatively large crystallites to reduce κ and retain σ is required. In this study, we used indium tin oxide (ITO), which is a typical example among metal oxides with high σ. Nanoporous ITOs with large crystallite sizes of several hundred nanometers and larger were successfully prepared using indium chloride as a source of indium. The pore sizes were varied using colloidal silica nanoparticles with different particle sizes as templates. The crystal phase and nanoporous structure of ITO were preserved after spark plasma sintering at 723 K and 80 MPa. The κ was significantly lower than that reported for bulk ITO due to the phonon scattering caused by the nanoporous structure and thin pore walls. There was a limited decrease in σ even with high porosity. These findings show that κ and σ are independently controllable through the precise control of the structure. The control of the thickness of the pore walls at tens of nanometers was effective for the selective scattering of phonons, while almost retaining electron mobility. The remarkable preservation of σ was attributed to the large crystallites that maintained paths for electron conduction and decreased electron scattering at the grain boundaries.

Thermoelectric Performance of Cr Doped and Cr-Fe Double-Doped Higher Manganese Silicides with Adjusted Carrier Concentration and Significant Electron-Phonon Interaction.

Polycrystalline higher manganese silicides Mn1-xCrxSi1.74 (x = 0, 0.10, 0.20) with Cr single doping and Mn1-2yCryFeySi1.74 (y = 0.10, 0.20) with Cr-Fe double doping have been prepared by arc melting and spark plasma sintering. Hall effect results and thermoelectric transport properties measurements demonstrate that Cr doping effectively increases the carrier concentration, thereby giving rise to enhanced electrical conductivity and power factor. Coupled with an enlarged effective mass and a reduction in the lattice thermal conductivity, a maximum zT is realized in Mn0.90Cr0.10Si1.74. It is also proved that the carrier concentration and carrier scattering mechanism could be altered through further doping on the Mn site by Fe, which leads to a lower electrical conductivity and higher Seebeck coefficient. Factors related to the suppression of the lattice thermal conductivity, like mass and strain field fluctuation scattering and electron-phonon scattering, are also analyzed. This work reveals the effects of Cr single doping and Cr-Fe dual-element doping on the carrier concentration, carrier scattering mechanism, and lattice thermal conductivity of higher manganese silicides.

Thermoelectric Enhancement of Silicon Membranes by Ultrathin Amorphous Films.

We propose a simple, low-cost, and large-area method to increase the thermoelectric figure of merit (ZT) in silicon membranes by the deposition of an ultrathin aluminum layer. Transmission electron microscopy showed that short deposition of aluminum on a silicon substrate covers the surface with an ultrathin amorphous film, which, according to recent theoretical works, efficiently destroys phonon wave packets. As a result, we measured 30-40% lower thermal conductivity in silicon membranes covered with aluminum films while the electrical conductivity was not affected. Thus, we have achieved 40-45% higher ZT values in membranes covered with aluminum films. To demonstrate a practical application, we applied this method to enhance the performance of a silicon membrane-based thermoelectric device and measured 42% higher power generation.

Thermoelectric Properties of Variants of Cu4Mn2Te4 with Spinel-Related Structure.

Thermoelectric properties of Cu4Mn2Te4, which is antiferromagnetic with a Néel temperature TN = 50 K and crystallizes in a spinel-related structure, have been investigated comprehensively here. The phase transition occurring at temperatures 463 and 723 K is studied by high-temperature X-ray diffraction (XRD) and differential scanning calorimetry (DSC), and its effect on thermoelectric properties is examined. Hypothetically Cu4Mn2Te4 is semiconducting according to the formula (Cu+)4(Mn2+)2(Te2-)4, while experimentally it shows p-type metallic conduction behavior, exhibiting electrical conductivity σ = 2500 Ω-1 cm-1 and Seebeck coefficient α = 20 µV K-1 at 325 K. Herein, we show that the carrier concentration and thus the thermoelectric transport properties could be further optimized through adding electron donors such as excess Mn. Discussions are made on the physical parameters contributing to the low thermal conductivity, including Debye temperature, speed of sound, and the Grüneisen parameter. As a result of simultaneously boosted power factor and reduced thermal conductivity, a moderately high zT = 0.65 at 680 K is obtained in an excess Mn\In co-added sample, amounting to 5 times that of the pristine Cu4Mn2Te4. This value ( zT = 0.65) is the best result ever reported for spinel and spinel-related chalcogenides.