Behavior Modeling for Charge Storage in Single-Poly Floating Gate Device.

Single-poly floating gate is an efficient device for charge storage due to low power program, and implemented in a standard CMOS process. In floating gate, charges are injected and removed through the thin gate oxide. Among the gate leakage current mechanisms, FN tunneling is significant in the high electric field, while PF emission in the low electric field. We extracted FN and PF components from the measured current and built an accurate model which include fringing field effect induced by the 3-dimensional structure. This model helps engineers reflect exact behaviors of charge storage device in their circuit design.

Power-Efficient Nonvolatile Ternary Content Addressable Memory with Flexible Search Scope Using Reconfigurable Match Line Segment and Selective Search Line.

This paper proposes a nonvolatile-based Ternary Content Addressable Memory (nvTCAM) with efficient dynamic power. The selective search line technique reduces the unnecessary power consumption by designating the search range according to the pattern of the stored data. The reconfigurable match line (ML) segment guarantees the optimal performance independent of the search pattern. Thanks to this technology, it shows a 21% reduction in data-driven power and a 46% reduction in ML-driven power. All those techniques are built in nvTCAM respectively. The test chip is fabricated using 180 nm CMOS technology, and functions are verified.

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

To synthesize a thermally robust Ni1-xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1-xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1-xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.

Three-dimensional CuO nanobundles consisted of nanorods: hydrothermal synthesis, characterization, and formation mechanism.

Novel monoclinic CuO nanobundles, 0.8-1 microm in size, were synthesized at 130 degrees C in the presence of sodium dodecyl benzenesulfonate (SDBS) by a simple hydrothermal method. Each nanobundle was comprised of many nanorods with one ends growing together to form a center and another ends radiating laterally from this center. The length and the diameter of these assembled nanorods are in the range of 200-300 nm and about 20-30 nm, respectively. HRTEM and SAED results indicated that the CuO nanorods grow along the [010] direction. An investigation of the hydrothermal process revealed that the reaction time, temperature and surfactant play important roles in the formation of the resultant CuO nanostructures. Isolated CuO nanorods were obtained when the temperature was increased to 190 degrees C, and CuO microflowers composed of many nanosheets were produced at 130 degrees C when cetyltrimethylammonium bromide (CTAB) was employed instead of SDBS. The possible mechanism for the formation of these CuO nanostructures was discussed simply on the basis of the experimental results.

Fabrication of free standing anodic titanium oxide membranes with clean surface using recycling process.

Large area of self-organized, free standing anodic titanium oxide (ATO) nanotube membranes with clean surfaces were facilely prepared to desired lengths via electrochemical anodization of highly pure Ti sheets in an ethylene glycol electrolyte, with a small amount of NH4F and H2O at 50 V, followed by self-detachment of the ATO membrane from the Ti substrate using recycling processes. In the first anodization step, the nanowire oxide layer existed over the well-arranged ATO nanotube. After sufficiently rinsing with water, the whole ATO layer was removed from the Ti sheet by high pressure N2 gas, and a well-patterned dimple layer with a thickness of about 30 nm existed on the Ti substrate. By using these naturally formed nano-scale pits as templates, in the second and third anodization process, highly ordered, vertically aligned, and free standing ATO membranes with the anodic aluminum oxide (AAO)-like clean surface were obtained. The inter-pore distance and diameter was 154 +/- 2 nm and 91+/- 2 nm, the tube arrays lengths for 25 and 46 hours were 44 and 70 microm, respectively. The present study demonstrates a simple approach to producing high quality, length controllable, large area TiO2 membrane.