Nondispersive Ultraviolet Visible Gas Analyzer for Monitoring Molybdenum Chloride and Oxychloride Precursors During Vapor Deposition Processes.

Nondispersive ultraviolet visible gas analyzer designs were evaluated for monitoring molybdenum-containing chloride and oxychloride precursor delivery during microelectronics vapor deposition processes. The performances of three analyzer designs, which differed only in the bandpass filter employed for wavelength selection, were compared for measuring the partial pressure of molybdenum pentachloride, molybdenum oxytetrachloride (MoOCl4), and molybdenum dioxydichloride (MoO2Cl2). The analyzer's optical response with a 369 nm center wavelength filter for molybdenum pentachloride was determined by measuring the molybdenum pentachloride absorbance as a function of vapor molar density. The calibrated analyzer was transferred to a process line on a deposition chamber and used to measure the molybdenum pentachloride partial pressure during delivery in a flowing carrier gas. The molybdenum pentachloride minimum detectable density was determined to be 1 × 10-4 mol m-3 (0.35 Pa for a cell temperature of 145 °C), for data collected at 1 kHz and referenced to a 0.2 s duration background. The analyzer optical response for molybdenum pentachloride with the two other filters and the response for MoOCl4 and MoO2Cl2 with all three filters were simulated with a simple model. These data were used to evaluate the sensitivity and selectivity of analyzers incorporating the different filters to some likely combinations of analytes and interferents.

Ultraviolet-Visible Absorption Spectroscopy of MoCl5, MoOCl4, and MoO2Cl2 Vapors.

This article reports quantitative absorption spectra for MoCl5, MoOCl4, and MoO2Cl2 in the vapor phase from 45,500 to 15,500 cm-1 (645 to 220 nm). Spectra are obtained in an ultrahigh purity stainless steel vacuum system by rapidly sampling a range of analyte partial pressures. The short measurement times and the differential absorbance method employed here minimize effects from uncontrolled transients such as window deposits. A detailed analysis of replicate measurements and time-resolved spectra shows generally reproducible spectral response from MoCl5 vapors at 120 °C. The presence of HCl and MoOCl4 impurities in the MoCl5 vapor samples is determined to be unlikely based on the analysis of absorbance-pressure curves and spectral peak fitting. Comparison with MoOCl4 and MoO2Cl2 spectra shows a unique spectral fingerprint for MoCl5 at 28,500 cm-1 providing a convenient means of discriminating between MoCl5 and its oxychlorides in the visible wavelengths. Adsorption behavior of MoCl5 on surfaces is also discussed with particular emphasis on the use of MoCl5 as a reactant in vapor phase thin film deposition processes.

GaSb band-structure models for electron density determinations from Raman measurements.

We investigate the use of Raman spectroscopy to measure carrier concentrations in n-type GaSb epilayers to aid in the development of this technique for the nondestructive characterization of transport properties in doped semiconductors. The carrier concentration is quantified by modeling the measured coupled optical phonon-free carrier plasmon mode spectra. We employ the Lindhard-Mermin optical susceptibility model with contributions from carriers in the two lowest GaSb conduction-band minima, the Γ and L minima. Furthermore, we evaluate three conduction-band models: (1) both minima parabolic and isotropic, (2) the Γ minimum non-parabolic and isotropic and the L minima parabolic and isotropic, and (3) the Γ minimum non-parabolic and isotropic and the L minima parabolic and ellipsoidal. For a given epilayer, the carrier concentration determined from the spectral simulations was consistently higher for the ellipsoidal L minima model than the other two models. To evaluate the conduction-band models, we calculated the L to Γ electron mobility ratio necessary for the electron concentrations from the Raman spectral measurements to reproduce those from the Hall effect measurements. We found that the model with the ellipsoidal L minima agreed best with reported carrier-dependent mobility-ratio values. Hence, employing isotropic L minima in GaSb conduction-band models, a common assumption when describing the GaSb conduction band, likely results in an underestimation of carrier concentration at room temperature and higher doping levels. This observation could have implications for Raman spectral modeling and any investigation involving the GaSb conduction band, e.g., modeling electrical measurements or calculating electron mobility.

Nondispersive Infrared Gas Analyzer for Partial Pressure Measurements of a Tantalum Alkylamide During Vapor Deposition Processes.

A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial pressure of pentakis(dimethylamido) tantalum, a metal precursor employed in high volume manufacturing vapor deposition processes to deposit tantalum nitride, and dimethylamine, the primary decomposition product of pentakis(dimethylamido) tantalum at typical delivery conditions for these applications. This sensor was based on direct absorption of pentakis(dimethylamido) tantalum and dimethylamine in the fingerprint spectral region. The nondispersive infrared analyzer optical response was calibrated by measuring absorbance as a function of dimethylamine and pentakis(dimethylamido) tantalum density. The difference between the mass of material removed from the ampoule during flow tests as measured gravimetrically and as determined optically, by calculating flow rates from the nondispersive infrared analyzer measurements, was only ≈2 %. The minimum detectable molecular densities for pentakis(dimethylamido) tantalum and dimethylamine were ≈2 × 1013 cm-3 and ≈5 × 1014 cm-3, respectively (with no signal averaging and for a sampling rate of 200 Hz), and the corresponding partial pressures were ≈0.1 Pa and ≈2 Pa for pentakis(dimethylamido) tantalum and dimethylamine, respectively (for an optical flow cell temperature of 93 ℃). Pentakis(dimethylamido) tantalum could be detected at all conditions of this investigation and likely the majority of conditions relevant to high volume manufacturing tantalum nitride deposition. Dimethylamine was not detected at all conditions in this study, because of a lower nondispersive infrared analyzer sensitivity to dimethylamine compared to pentakis(dimethylamido) tantalum and because conditions of this study were selected to minimize DMA production. While this nondispersive infrared gas analyzer was specifically developed for pentakis(dimethylamido) tantalum and dimethylamine, it is suitable for characterizing the vapor delivery of other metal alkylamide precursors and the corresponding amine decomposition products, although in the case of some metal alkylamides a different bandpass filter would be required.

Extracting electron densities in n-type GaAs from Raman spectra: Comparisons with Hall measurements.

We demonstrate quantitatively how values of electron densities in GaAs extracted from Raman spectra of two samples depend on models used to describe electric susceptibility and band structure. We, therefore, developed a theory that is valid for any temperature, doping level, and energy ratio proportional to q 2=(ω + iγ) (where q is the magnitude of wave vector, ω is Raman frequency, and γ is plasmon damping). We use a full Mermin-Lindhard description of Raman line shape and compare n-type GaAs spectra obtained from epilayers with our simulated spectra. Our method is unique in two ways: (1) we do a sensitivity analysis by employing four different descriptions of the GaAs band structure to give electron densities as functions of Fermi energies and (2) one of the four band structure descriptions includes bandgap narrowing that treats self-consistently the many-body effects of exchange and correlation in distorted-electron densities of states and solves the charge neutrality equation for a two-band model of GaAs at 300 K. We apply these results to obtain electron densities from line shapes of Raman spectra and thereby demonstrate quantitatively how the values of electron densities extracted from Raman spectra of n-type GaAs depend of various models for susceptibility and band structure.

Experiment-based modelling of a vapor draw ampoule used for low-volatility precursors.

Delivery of low-volatility precursors is a continuing challenge for chemical vapor deposition and atomic layer deposition processes used for microelectronics manufacturing. To aid in addressing this problem, we have recently developed an inline measurement capable of monitoring precursor delivery. Motivated by a desire to better understand the origins of what is now observable, this study uses computational fluid dynamics and a relatively simple model to simulate the delivery of pentakis(dimethylamido)tantalum (PDMAT) from a commercial vapor draw ampoule. Parameters used in the model are obtained by fitting the performance of the ampoule to a limited dataset of PDMAT delivery rates obtained experimentally using a non-dispersive infrared sensor. The model shows good agreement with a much larger experimental dataset over a range of conditions in both pulsed and continuously flowing operation. The combined approach of experiment and simulation provides a means to understand the phenomena occurring during precursor delivery both quantitatively and qualitatively.

Apparatus for Characterizing Gas-Phase Chemical Precursor Delivery for Thin Film Deposition Processes.

Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemical precursor flux to the deposition surface. However, achieving the desired control can be difficult due to numerous factors, including delivery system design, ampoule configuration, and precursor properties. This report describes an apparatus designed to investigate such factors. The apparatus simulates a single precursor delivery line, e.g., in a chemical vapor deposition tool, with flow control, pressure monitoring, and a precursor-containing ampoule. It also incorporates an optical flow cell downstream of the ampoule to permit optical measurements of precursor density in the gas stream. From such measurements, the precursor flow rate can be determined, and, for selected conditions, the precursor partial pressure in the headspace can be estimated. These capabilities permit this apparatus to be used for investigating a variety of factors that affect delivery processes. The methods of determining the pressure to (1) calculate the precursor flow rate and (2) estimate the headspace pressure are discussed, as are some of the errors associated with these methods. While this apparatus can be used under a variety of conditions and configurations relevant to deposition processes, the emphasis here is on low-volatility precursors that are delivered at total pressures less than about 13 kPa downstream of the ampoule. An important goal of this work is to provide data that could facilitate both deposition process optimization and ampoule design refinement.

Characterization of bubbler performance for low-volatility liquid precursor delivery.

The performance of a bubbler to deliver the low-volatility, liquid cobalt precurso µ 2 - η 2 -(tBu-acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure chemical vapor deposition and atomic layer deposition processes was characterized. A relatively large process window was investigated by varying carrier gas flow rate, system pressure, and bubbler temperature. For this range of conditions, the CCTBA partial pressure was measured using a custom-designed non-dispersive infrared gas analyzer, and the CCTBA flow rates were derived from these partial pressure measurements. The dependence of CCTBA flow rate on these process parameters was modeled to obtain a deeper understanding of the factors influencing bubbler performance. Good agreement between measured and modeled CCTBA flow rates was obtained using a model in which a constant CCTBA partial pressure in the bubbler head space for a given bubbler temperature was assumed and in which the pressure drop between the bubbler head space and the pressure measurement location was included. The dependence of CCTBA head space partial pressure on temperature was parameterized in the form of the August equation, which is commonly used to describe the temperature-dependence of vapor pressure. While this report was focused specifically on CCTBA, the results are expected to apply to other low-volatility, liquid precursors of interest in vapor deposition processes.

MoS2 thin films from a (N t Bu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process.

Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. We have developed a new thermal atomic layer deposition (ALD) process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. We observe self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As-deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed, and we obtain few-layer crystalline 2H-MoS2 films.

In situ infrared spectroscopy during La2O3 ALD using La( i PrCp)3 and H2O.

Infrared spectra of surface species have been obtained during atomic layer deposition using tris(isopropylcyclopentadienyl)lanthanum, La(iPrCp)3, and water as precursors at 160 °C and 350 °C. Gas-phase spectra of La(iPrCp)3are obtained for comparison. At low temperature, ligand exchange is seen to occur, and carbonate formation is found. With extended purging, the organic ligands are found to be stable on the surface, and carbonates are not formed. These observations indicate that carbonate formation is occurring during exposure to the precursors. At high temperature, the La precursor is observed to decompose leaving an opaque deposit containing relatively little hydrogen.

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor.

A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso µ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorption by CCTBA vapor in the C≡O stretching spectral region and utilized a stable, broadband IR filament source, an optical chopper to modulate the source, a bandpass filter for wavelength isolation, and an InSb detector. The optical system was calibrated by selecting a calibration factor to convert CCTBA absorbance to a partial pressure that, when used to calculate CCTBA flow rate and CCTBA mass removed from the ampoule, resulted in an optically determined mass that was nominally equal to a gravimetrically-determined mass. In situ Fourier transform infrared (FT-IR) spectroscopy was performed simultaneously with the NDIR gas analyzer measurements under selected conditions in order to characterize potential spectroscopic interferences. Interference due to CO evolution from CCTBA was found to be small under the flow conditions employed here. A CCTBA minimum detectable molecular density as low as ≈3 × 1013 cm-3 was calculated (with no signal averaging and for a sampling rate of 200 Hz). While this NDIR gas analyzer was specifically tested for CCTBA, it is suitable for characterizing the vapor delivery of a range of carbonyl-containing precursors.

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition.

High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS2 films from ≈ 1 nm to ≈ 25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metalorganic reagents in the controlled synthesis of TMDs.

Measurements of metal alkylamide density during atomic layer deposition using a mid-infrared light-emitting diode (LED) source.

A nondispersive infrared (NDIR) gas analyzer that utilizes a mid-infrared light emitting diode (LED) source was demonstrated for monitoring the metal alkylamide compound tetrakis(dimethylamido) titanium (TDMAT), Ti[N(CH3)2]4. This NDIR gas analyzer was based on direct absorption measurement of TDMAT vapor in the C-H stretching spectral region, a spectral region accessed using a LED with a nominal emission center wavelength of 3.65 µm. The sensitivity of this technique to TDMAT was determined by comparing the absorbance measured using this technique to the TDMAT density as determined using in situ Fourier transform IR (FT-IR) spectroscopy. Fourier transform IR spectroscopy was employed because this technique could be used to (1) quantify TDMAT density in the presence of a carrier gas (the presence of which precludes the use of a capacitance manometer to establish TDMAT density) and (2) distinguish between TDMAT and other gas-phase species containing IR-active C-H stretching modes (allowing separation of the signal from the LED-based optical system into fractions due to TDMAT and other species, when necessary). During TDMAT-only delivery, i.e., in the absence of co-reactants and deposition products, TDMAT minimum detectable molecular densities as low as ≈4 × 10(12) cm(-3) were demonstrated, with short measurement times and appropriate signal averaging. Reactions involving TDMAT often result in the evolution of the reaction product dimethylamine (DMA), both as a thermal decomposition product in a TDMAT ampoule and as a deposition reaction product in the deposition chamber. Hence, the presence of DMA represents a significant potential interference for this technique, and therefore, the sensitivity of this technique to DMA was also determined by measuring DMA absorbance as a function of pressure. The ratio of the TDMAT sensitivity to the DMA sensitivity was determined to be ≈6.0. To further examine the selectivity of this technique, measurements were also performed during atomic layer deposition (ALD) of titanium dioxide using TDMAT and water. During ALD, potential interferences were expected from the evolution of DMA due to deposition reactions and the deposition on the windows of species containing IR-active C-H stretching modes. It was found that the interfering effects of the evolution of DMA and deposition of species on the windows corresponded to a maximum of only ≈6% of the total observed TDMAT density. However, this level of interference likely is relatively low compared to a typical chemical vapor deposition process in which co-reactants are introduced into the chamber at the same time.

Time-resolved surface infrared spectroscopy during atomic layer deposition.

This work presents a novel method for obtaining surface infrared spectra with sub-second time resolution during atomic layer deposition (ALD). Using a rapid-scan Fourier transform infrared (FT-IR) spectrometer, we obtain a series of synchronized interferograms (120 ms) during multiple ALD cycles to observe the dynamics of an average ALD cycle. We use a buried metal layer (BML) substrate to enhance absorption by the surface species. The surface selection rules of the BML allow us to determine the contribution from the substrate surface as opposed to that from gas-phase molecules and species adsorbed at the windows. In addition, we use simulation to examine the origins of increased reflectivity associated with phonon absorption by the oxide layers. The simulations are also used to determine the decay in enhancement by the buried metal layer substrate as the oxide layer grows during the experiment. These calculations are used to estimate the optimal number of ALD cycles for our experimental method.

Quantum cascade laser-based measurement of metal alkylamide density during atomic layer deposition.

An in situ gas-phase diagnostic for the metal alkylamide compound tetrakis(ethylmethylamido) hafnium (TEMAH), Hf[N(C(2)H(5))(CH(3))](4), was demonstrated. This diagnostic is based on direct absorption measurement of TEMAH vapor using an external cavity quantum cascade laser emitting at 979 cm(-1), coinciding with the most intense TEMAH absorption in the mid-infrared spectral region, and employing 50 kHz amplitude modulation with synchronous detection. Measurements were performed in a single-pass configuration in a research-grade atomic layer deposition (ALD) chamber. To examine the detection limit of this technique for use as a TEMAH delivery monitor, this technique was demonstrated in the absence of any other deposition reactants or products, and to examine the selectivity of this technique in the presence of deposition products that potentially interfere with detection of TEMAH vapor, it was demonstrated during ALD of hafnium oxide using TEMAH and water. This technique successfully detected TEMAH at molecular densities present during simulated industrial ALD conditions. During hafnium oxide ALD using TEMAH and water, absorbance from gas-phase reaction products did not interfere with TEMAH measurements while absorption by reaction products deposited on the optical windows did interfere, although interfering absorption by deposited reaction products corresponded to only ≈4% of the total derived TEMAH density. With short measurement times and appropriate signal averaging, estimated TEMAH minimum detectable densities as low as ≈2 × 10(12) molecules/cm(3) could be obtained. While this technique was demonstrated specifically for TEMAH delivery and hafnium oxide ALD using TEMAH and water, it should be readily applicable to other metal alkylamide compounds and associated metal oxide and nitride deposition chemistries, assuming similar metal alkylamide molar absorptivity and molecular density in the measurement chamber.

Optical cell for combinatorial in situ Raman spectroscopic measurements of hydrogen storage materials at high pressures and temperatures.

An optical cell is described for high-throughput backscattering Raman spectroscopic measurements of hydrogen storage materials at pressures up to 10 MPa and temperatures up to 823 K. High throughput is obtained by employing a 60 mm diameter × 9 mm thick sapphire window, with a corresponding 50 mm diameter unobstructed optical aperture. To reproducibly seal this relatively large window to the cell body at elevated temperatures and pressures, a gold o-ring is employed. The sample holder-to-window distance is adjustable, making this cell design compatible with optical measurement systems incorporating lenses of significantly different focal lengths, e.g., microscope objectives and single element lenses. For combinatorial investigations, up to 19 individual powder samples can be loaded into the optical cell at one time. This cell design is also compatible with thin-film samples. To demonstrate the capabilities of the cell, in situ measurements of the Ca(BH(4))(2) and nano-LiBH(4)-LiNH(2)-MgH(2) hydrogen storage systems at elevated temperatures and pressures are reported.

A combinatorial characterization scheme for high-throughput investigations of hydrogen storage materials.

In order to increase measurement throughput, a characterization scheme has been developed that accurately measures the hydrogen storage properties of materials in quantities ranging from 10 ng to 1 g. Initial identification of promising materials is realized by rapidly screening thin-film composition spread and thickness wedge samples using normalized IR emissivity imaging. The hydrogen storage properties of promising samples are confirmed through measurements on single-composition films with high-sensitivity (resolution <0.3 µg) Sievert's-type apparatus. For selected samples, larger quantities of up to ∼100 mg may be prepared and their (de)hydrogenation and micro-structural properties probed via parallel in situ Raman spectroscopy. Final confirmation of the hydrogen storage properties is obtained on ∼1 g powder samples using a combined Raman spectroscopy/Sievert's apparatus.

Characterization of metal oxide nanofilm morphologies and composition by terahertz transmission spectroscopy.

An all-optical terahertz absorption technique for nondestructive characterization of nanometer-scale metal oxide thin films grown on silicon substrates is described. Example measurements of laser-deposited TiO2 and atomic layer-deposited films of HfO2 are presented to demonstrate applicability to pure Y2O3, Al2O3, and VOx and mixed combinatorial films as a function of deposition conditions and thickness. This technique is also found to be sensitive to HfO2 phonon modes in films with a nominal thickness of 5 nm.

Adsorption behavior of DNA-wrapped carbon nanotubes on self-assembled monolayer surfaces.

We have examined the adsorption of DNA-wrapped single-walled carbon nanotubes (DNA-SWNTs) on hydrophobic, hydrophilic, and charged surfaces of alkylthiol self-assembled monolayers (SAMs) on gold. Our goal is to understand how DNA-SWNTs interact with surfaces of varying chemical functionality. These samples were characterized using reflection absorption FTIR (RAIRS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. We have found that DNA-SWNTs preferentially adsorb to positively charged amine-terminated SAMs and to bare gold surfaces versus hydrophobic methyl-terminated or negatively charged carboxylic acid-terminated SAMs. Examination of the adsorption on gold of single-strand DNA (ssDNA) of the same sequence used to wrap the SWNTs suggests that the DNA wrapping plays a role in the adsorption behavior of DNA-SWNTs.