Epitaxial Growth of Ga2O3: A Review.

Beta-phase gallium oxide (ß-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of ß-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of ß-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

Improved Electrochemical Performance in an Exfoliated Tetracyanonickelate-Based Metal-Organic Framework.

Tetracyanonickelate (TCN)-based metal-organic frameworks (MOFs) show great potential in electrochemical applications such as supercapacitors due to their layered morphology and tunable structure. This study reports on improved electrochemical performance of exfoliated manganese tetracyanonickelate (Mn-TCN) nanosheets produced by the heat-assisted liquid-phase exfoliation (LPE) technique. The structural change was confirmed by the Raman frequency shift of the C≡N band from 2177 to 2182 cm-1 and increased band gap from 3.15 to 4.33 eV in the exfoliated phase. Statistical distribution obtained from atomic force microscopy (AFM) shows that 50% of the nanosheets are single-to-four-layered and have an average lateral size of ∼240 nm2 and thickness of ∼1.2-4.8 nm. High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) patterns suggest that the material maintains its crystallinity after exfoliation. It exhibits an almost 6-fold improvement in specific capacitance (from 13.0 to 72.5 F g-1) measured at a scan rate of 5 mV s-1 in 1 M KOH solution. Galvanostatic charge-discharge (GCD) measurement shows a capacity enhancement from ∼18 F g-1 in the bulk phase to ∼45 F g-1 in the exfoliated phase at a current density of 1 A g-1. Bulk crystals exhibit an increasing trend of capacitance retention by ∼125% over 1000 charge-discharge cycles attributed to electrochemical exfoliation. Electrochemical impedance spectroscopy (EIS) demonstrates a 5-fold reduction in the total equivalent series resistance (ESR) from 4864 Ω (bulk) to 1089 Ω (exfoliated). The enhanced storage capacity in the exfoliated phase results from the combined effect of the electrochemical double-layer charge storage mechanism at the nanosheet-electrolyte interface and the Faradic process characteristic of the pseudocapacitive charge storage behavior.

Performance Analysis of Linearly Arranged Concentric Circular Antenna Array with Low Sidelobe Level and Beamwidth Using Robust Tapering Technique.

In this research, a novel antenna array named Linearly arranged Concentric Circular Antenna Array (LCCAA) is proposed, concerning lower beamwidth, lower sidelobe level, sharp ability to detect false signals, and impressive SINR performance. The performance of the proposed LCCAA beamformer is compared with geometrically identical existing beamformers using the conventional technique where the LCCAA beamformer shows the lowest beamwidth and sidelobe level (SLL) of 12.50° and -15.17 dB with equal elements accordingly. However, the performance is degraded due to look direction error, for which robust techniques, fixed diagonal loading (FDL), optimal diagonal loading (ODL), and variable diagonal loading (VDL), are applied to all the potential arrays to minimize this problem. Furthermore, the LCCAA beamformer is further simulated to reduce the sidelobe applying tapering techniques where the Hamming window shows the best performance having 17.097 dB less sidelobe level compared to the uniform window. The proposed structure is also analyzed under a robust tapered (VDL-Hamming) method which reduces around 69.92 dB and 48.39 dB more sidelobe level compared to conventional and robust techniques. Analyzing all the performances, it is clear that the proposed LCCAA beamformer is superior and provides the best performance with the proposed robust tapered (VDL-Hamming) technique.