Bottom Contact Engineering for Ambient Fabrication of >25% Durable Perovskite Solar Cells.

The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO2) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (VOC) exceeding 1.19 V. The VOC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T90 = 1000 h), higher than T80 = 1000 h for the control SnO2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.

Comparison of Pb-based and Sn-based perovskite solar cells using SCAPS simulation: optimal efficiency of eco-friendly CsSnI3 devices.

In this study, we employed the one-dimensional solar cell capacitance simulator (SCAPS-1D) software to optimize the performance of Pb-based and Sn-based (Pb-free) all-inorganic perovskites (AIPs) and organic-inorganic perovskites (OIPs) in perovskite solar cell (PSC) structures. Due to the higher stability of AIPs, the performance of PSCs incorporating Cs-based perovskites was compared with that of FA-based perovskites, which are more stable than their MA-based counterparts. The impact of AIPs such as CsPbCl3, CsPbBr3, CsPbI3, CsSnCl3, CsSnBr3, and CsSnI3, as well as including FAPbCl3, FAPbBr3, FAPbI3, FASnCl3, FASnBr3, and FASnI3, was investigated. SnO2 and Cu2O were selected as an inorganic electron transport layer (ETL) and a hole transport layer (HTL), respectively. CsSnBr3, CsSnI3, FASnCl3, and FASnBr3 exhibited higher efficiency compared to their Pb-based counterparts. Additionally, most Cs-based perovskites, excluding CsPbI3, demonstrated better performance relative to their FA counterparts. CsSnI3 AIP device also shows the highest short circuit current density (JSC) of 32.85 mA/cm2, the best power conversion efficiency (PCE) of 16.00%, and the least recombination at the SnO2/CsSnI3 interface. The thickness, doping, and total defect density of CsSnI3 PSC have been systematically investigated and optimized to obtain the PCE of 17.36%. These findings highlight the potential of CsSnI3 PSCs as efficient and environmentally friendly PSCs.

Novel solution-gated transistor sensor-based SnO2 epitaxial thin films grown by pulsed laser deposition for nitrite detection.

A solution-gate controlled thin-film transistor with SnO2 epitaxial thin films (SnO2-SGTFT) is successfully utilized for highly sensitive detection of nitrite. The SnO2 films are deposited as channel materials on a c-plane sapphire (c-Al2O3) substrate through pulsed laser deposition (PLD), with superior crystal quality and out-of-plane atomic ordering. PtAu NPs/rGO nanocomposites are electrodeposited on a gold electrode to function as a transistor gate to further enhance the nitrite catalytic performance of the device. The change in effective gate voltage due to the electrooxidation of nitrite on the gate electrode is the primary sensing mechanism of the device. Based on the inherent amplification effect of transistors, the superior electrical properties of SnO2, and the high electrocatalytic activity of PtAu NPs/rGO, the SnO2-SGTFT sensor has a low detection limit of 0.1 nM and a wide linear detection range of 0.1 nM ~ 50 mM at VGS = 1.0 V. Furthermore, the sensor has excellent characteristics such as rapid response time, selectivity, and stability. The practicability of the device has been confirmed by the quantitative detection of nitrite in natural lake water. SnO2 epitaxial films grown by PLD provide a simple and efficient way to fabricate nitrite SnO2-SGTFT sensors in environmental monitoring and food safety, among others. It also provides a reference for the construction of other high-performance thin-film transistor sensors.

Enhance Ethanol Sensing Performance of Fe-Doped Tetragonal SnO2 Films on Glass Substrate with a Proposed Mathematical Model for Diffusion in Porous Media.

This research enhances ethanol sensing with Fe-doped tetragonal SnO2 films on glass, improving gas sensor reliability and sensitivity. The primary objective was to improve the sensitivity and operational efficiency of SnO2 sensors through Fe doping. The SnO2 sensors were synthesized using a flexible and adaptable method that allows for precise doping control, with energy-dispersive X-ray spectroscopy (EDX) confirming homogeneous Fe distribution within the SnO2 matrix. A morphological analysis showed a surface structure ideal for gas sensing. The results demonstrated significant improvement in ethanol response (1 to 20 ppm) and lower temperatures compared to undoped SnO2 sensors. The Fe-doped sensors exhibited higher sensitivity, enabling the detection of low ethanol concentrations and showing rapid response and recovery times. These findings suggest that Fe doping enhances the interaction between ethanol molecules and the sensor surface, improving performance. A mathematical model based on diffusion in porous media was employed to further analyze and optimize sensor performance. The model considers the diffusion of ethanol molecules through the porous SnO2 matrix, considering factors such as surface morphology and doping concentration. Additionally, the choice of electrode material plays a crucial role in extending the sensor's lifespan, highlighting the importance of material selection in sensor design.

Cu/Mn-mediated electron shuttle and high-valent metals enhance hydroxyl radicals production during the electrochemical oxidation on the CuMn-Sb-SnO2 electrode.

In this work, a novel CuMn-Sb-SnO2 anode is developed by a simple, low-cost preparation process. The doping of Cu and Mn causes surface reconstruction, which optimizes its electronic structure, compared to the Sb-SnO2 anode. Experimental results demonstrate that the levofloxacin degradation kinetics constant in the CuMn-Sb-SnO2 system (0.188 min-1) was 8.5 times higher than that in the Sb-SnO2 system, which is surpassing most reported anodes. Moreover, electrochemical characterization also revealed that the CuMn-Sb-SnO2 anode possessed more active sites, higher OEP potential, and lower charge transfer resistance. Notably, electrochemical characterization and EPR experiments confirmed the formation of Cu (III), highlighting their crucial role in promoting the generation of •OH during the catalytic process. Additionally, theoretical calculations and XPS analysis revealed that Cu and Mn rely on self-mediated redox shuttles to act as "electron porters", significantly accelerating internal electron transfer between Sn and Sb to enhance the production of •OH. Furthermore, the CuMn-Sb-SnO2 anode exhibits great practicability due to its efficient degradation of various antibiotics. This study offers valuable new insights into developing novel electrodes for the efficient degradation of antibiotic wastewater.

Naphthalene Diimide-Modified SnO2 Enabling Low-Temperature Processing for Efficient ITO-Free Flexible Perovskite Solar Cells.

A low-cost and indium-tin-oxide (ITO)-free electrode-based flexible perovskite solar cell (PSC) that can be fabricated by roll-to-roll processing shall be developed for successful commercialization. High processing temperatures present a challenge for the PSC fabrication on flexible substrates. The most efficient planar n-i-p PSC structures, which utilize a metal oxide as an electron transport layer (ETL), necessitate high annealing temperatures. In addition, the device performance deteriorates owing to the migration of halogen ions, which causes the oxidation of the metal electrodes. These drawbacks conflict with the development of highly efficient flexible PSCs fabricated on ITO-free transparent electrodes. Herein, an efficient ETL material that enables low-temperature processing is presented. Tin dioxide (SnO2) is modified by (sulfobetaine-N,N-dimethylamino)propyl naphthalene diimide (NDI-B) and used as an ETL. The NDI-B effectively reduces the interfacial nonradiative recombination between the ETL and perovskite and suppresses the ion migration by passivating oxygen-vacancy defects in SnO2 and strongly interacting with halogen ions, respectively. Based on the NDI-B-blended SnO2 ETL, a record PCE of 17.48% is achieved in the ITO-free flexible PSC fabricated at low temperature.

Structure and Selected Properties of SnO2 Thin Films.

Magnesium and its alloys are attractive temporary implants due to their biocompatibility and biodegradability. Moreover, Mg has good mechanical and osteoinductive properties. But magnesium and Mg alloys have one significant disadvantage: poor corrosion resistance in a physiological environment. Hence, a deposition of various layers on the surface of Mg alloys seems to be a good idea. The purpose of the article is to analyze the structure and morphology of two MgCa2Zn1 and MgCa2Zn1Gd3 alloys coated by SnO2 ALD (atomic layer deposition) films of various thickness. The studies were performed using scanning electron microscopy (SEM), X-ray fluorescence (XRF), and an X-ray diffractometer. The corrosion activity of the thin films and substrate alloys in a chloride-rich Ringer's solution at 37 °C was also observed. The corrosion tests that include electrochemical, immersion measurements, and electrochemical impedance spectroscopy (EIS) were evaluated. The results indicated that SnO2 had a heterogeneous crystal structure. The surfaces of the thin films were rough with visible pores. The corrosion resistance of SnO2 measured in all corrosion tests was higher for the thicker films. The observations of corrosion products after immersion tests indicated that they were lamellar-shaped and mainly contained Mg, O, Ca, and Cl in a lower concentration.

Bimetallic PtAu-Decorated SnO2 Nanospheres Exhibiting Enhanced Gas Sensitivity for Ppb-Level Acetone Detection.

Acetone is a biomarker found in the expired air of patients suffering from diabetes. Therefore, early and accurate detection of its concentration in the breath of such patients is extremely important. We prepared Tin(IV) oxide (SnO2) nanospheres via hydrothermal treatment and then decorated them with bimetallic PtAu nanoparticles (NPs) employing the approach of in situ reduction. The topology, elemental composition, as well as crystal structure of the prepared materials were studied via field emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The findings revealed that bimetallic PtAu-decorated SnO2 nanospheres (PtAu/SnO2) were effectively synthesized as well as PtAu NPs evenly deposited onto the surface of the SnO2 nanospheres. Pure SnO2 nanospheres and PtAu/SnO2 sensors were prepared, and their acetone gas sensitivity was explored. The findings demonstrated that in comparison to pristine SnO2 nanosphere sensors, the sensors based on PtAu/SnO2 displayed superior sensitivity to acetone of 0.166-100 ppm at 300 °C, providing a low theoretical limit of detection equal to 158 ppm. Moreover, the PtAu/SnO2 sensors showed excellent gas response (Ra/Rg = 492.3 to 100 ppm), along with fast response and recovery (14 s/13 s to 10 ppm), good linearity of correlation, excellent repeatability, long-term stability, and satisfactory selectivity at 300 °C. This improved gas sensitivity was because of the electron sensitization of the Pt NPs, the chemical sensitization of the Au NPs, as well as the synergistic effects of bimetallic PtAu. The PtAu/SnO2 sensors have considerable potential for the early diagnosis and screening of diabetes.

Chemical bath deposition of SnO2films on PEN/ITO substrates for efficient flexible perovskite solar cells.

Flexible perovskite solar cells (f-PSCs) have achieved significant success. However, high-quality tin dioxide (SnO2) electron transport layers (ETLs) fabricated via chemical bath deposition (CBD) have not been achieved on flexible PEN/ITO substrates. This limitation is primarily due to the corrosion of the poor-quality ITO layer by the strongly acidic CBD solution. Here, we analyzed the reasons for the poor corrosion resistance of ITO films on PEN substrate from multiple perspectives, such as element composition, microstructure, and crystallinity. Then, we proposed a modified CBD method for SnO2films suitable for flexible PEN/ITO substrates. We employed SnCl2·2H2O as the tin source and regulated the pH of the CBD solution by NH3·H2O, which effectively avoided the corrosion of the ITO layer by the CBD solution and achieved high-quality SnO2films on the ITO layers. Compared to the commercial SnO2dispersion, the SnO2films prepared by this method have smaller grains and higher transmittance. As a result, we achieved an unprecedented power conversion efficiency (PCE) of 20.71% for f-PSCs fabricated on PEN/ITO substrates with SnO2ETLs by CBD method. This breakthrough facilitates the development of high-performance f-PSCs by a low-cost and large-scale chemical bath deposition of high-quality ETLs on flexible substrates.

A competitive-type photoelectrochemical aptasensor for 17 beta-estradiol detection in microfluidic devices based on a novel Au@Cd:SnO2/SnS2 nanocomposite.

A competitive-type photoelectrochemical (PEC) aptasensor coupled with a novel Au@Cd:SnO2/SnS2 nanocomposite was designed for the detection of 17ß-estradiol (E2) in microfluidic devices. The designed Au@Cd:SnO2/SnS2 nanocomposites exhibit high photoelectrochemical activity owing to the good matching of cascade band-edge and the efficient separation of photo-generated e-/h+ pairs derived from the Cd-doped defects in the energy level. The Au@Cd:SnO2/SnS2 nanocomposites were loaded into carbon paste electrodes (CPEs) to immobilize complementary DNA (cDNA) and estradiol aptamer probe DNA (E2-Apt), forming a double-strand DNA structure on the CPE surface. As the target E2 interacts with the double-strand DNA, E2-Apt is sensitively released from the CPE, subsequently increasing the photocurrent intensity due to the reduced steric hindrance of the electrode surface. The competitive-type sensing mechanism, combined with high PEC activity of the Au@Cd:SnO2/SnS2 nanocomposites, contributed to the rapid and sensitive detection of E2 in a "signal on" manner. Under the optimized conditions, the PEC aptasensor exhibited a linear range from 1.0 × 10-13 mol L-1 to 3.2 × 10-6 mol L-1 and a detection limit of 1.2 × 10-14 mol L-1 (S/N = 3). Moreover, the integration of microfluidic device with smartphone controlled portable electrochemical workstation enables the on-site detection of E2. The small sample volume (10 µL) and short analysis time (40 min) demonstrated the great potential of this strategy for E2 detection in rat serum and river water. With these advantages, the PEC aptasensor can be utilized for point-of-care testing (POCT) in both clinical and environmental applications.

Doped SnO2thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms.

Nb-doped SnO2(NTO) thin films were synthesized by atomic layer deposition technique at low temperature (100 °C). For an efficient incorporation of the Nb atoms, i.e. fine control of their amount and distribution, various supercycle ratios and precursor pulse sequences were explored. The thin film growth process studied byin-situQCM revealed that the Nb incorporation is highly impacted by the surface nature as well as the amount of species available at the surface. This was confirmed by the actual concentration of the Nb atom incorporated inside the thin film as determined by XPS. Highly transparent thin films which transmit more than 95% of the AM1.5 global solar irradiance over a wide spectral range (300-1000 nm) were obtained. In addition, the Nb atoms influenced the optical band gap, conduction band, and valence band levels. While SnO2thin film were too resistive, films tuned to conductive nature upon Nb incorporation with controlled concentration. Optimal incorporation level was found to be ⩽1 at.% of Nb, and carrier concentration reached up 2.5 × 1018cm-3for the as-deposited thin films. As a result, the high optical transparency accompanied with tuned electrical property of NTO thin films fabricated by ALD at low temperature paves the way for their integration into temperature-sensitive, nanostructured optoelectrical devices.

Recent Advances in Metal Oxide Electron Transport Layers for Enhancing the Performance of Perovskite Solar Cells.

Perovskite solar cells (PSCs) have attracted considerable interest owing to their low processing costs and high efficiency. A crucial component of these devices is the electron transport layer (ETL), which plays a key role in extracting and transmitting light-induced electrons, modifying interfaces, and adjusting surface energy levels. This minimizes charge recombination in PSCs, a critical factor in their performance. Among the various ETL materials, titanium dioxide (TiO2) and tin dioxide (SnO2) stand out due to their excellent electron mobility, suitable band alignment, high transparency, and stability. TiO2 is widely used because of its appropriate conduction band position, easy fabrication, and favorable charge extraction properties. SnO2, on the other hand, offers higher electron mobility, better stability under UV illumination, and lower processing temperatures, making it a promising alternative. This paper summarizes the latest advancements in the research of electron transport materials, including material selection and a discussion of electron collection. Additionally, it examines doping techniques that enhance electron mobility and surface modification technologies that improve interface quality and reduce recombination. The impact of these parameters on the performance and passivation behavior of PSCs is also examined. Technological advancements in the ETL, especially those involving TiO2 and SnO2, are currently a prominent research direction for achieving high-efficiency PSCs. This review covers the current state and future directions in ETL research for PSCs, highlighting the crucial role of TiO2 and SnO2 in enhancing device performance.

Interfacial Accumulation and Stability Enhancement Effects Triggered by Built-in Electric Field of SnO2/LaOCl Nanofibers Boost Carbon Dioxide Electroreduction.

Constructing a built-in interfacial electric field (BIEF) is an effective approach to enhance the electrocatalysts performance, but it has been rarely demonstrated for electrochemical carbon dioxide reduction reaction (CO2RR) to date. Herein, for the first time, SnO2/LaOCl nanofibers (NFs) with BIEF is created by electrospinning, exhibiting a high Faradaic efficiency (FE) of 100% C1 product (CO and HCOOH) at -0.9--1.1 V versus reversible hydrogen electrode (RHE) and a maximum FEHCOOH of 90.1% at -1.2 VRHE in H-cell, superior to the commercial SnO2 nanoparticles (NPs) and LaOCl NFs. SnO2/LaOCl NFs also exhibit outstanding stability, maintaining negligible activity degradation even after 10 h of electrolysis. Moreover, their current density and FEHCOOH are almost 400 mA cm-2 at -2.31 V and 83.4% in flow-cell. The satisfactory CO2RR performance of SnO2/LaOCl NFs with BIEF can be ascribed to tight interface of coupling SnO2 NPs and LaOCl NFs, which can induce charge redistribution, rich active sites, enhanced CO2 adsorption, as well as optimized Gibbs free energy of *OCHO. The work reveals that the BIEF will trigger interfacial accumulation and stability enhancement effects in promoting CO2RR activity and stability of SnO2-based materials, providing a novel approach to develop stable and efficient CO2RR electrocatalysts.

Ce-Doped SnO2 Electron Transport Layer for Minimizing Open Circuit Voltage Loss in Lead Perovskite Solar Cells.

In the planar heterostructure of perovskite-based solar cells (PSCs), tin oxide (SnO2) is a material that is often used as the electron transport layer (ETL). SnO2 ETL exhibits favorable optical and electrical properties in the PSC structures. Nevertheless, the open circuit voltage (VOC) depletion occurs in PSCs due to the defects arising from the high oxygen vacancy on the SnO2 surface and the deeper conduction band (CB) energy level of SnO2. In this research, a cerium (Ce) dopant was introduced in SnO2 (Ce-SnO2) to suppress the VOC loss of the PSCs. The CB minimum of SnO2 was shifted closer to that of the perovskite after the Ce doping. Besides, the Ce doping effectively passivated the surface defects on SnO2 as well as improved the electron transport velocity by the Ce-SnO2. These results enabled the power conversion efficiency (PCE) to increase from 21.1% (SnO2) to 23.0% (Ce-SnO2) of the PSCs (0.09 cm2 active area) with around 100 mV of improved VOC and reduced hysteresis. Also, the Ce-SnO2 ETL-based large area (1.0 cm2) PSCs delivered the highest PCE of 22.9%. Furthermore, a VOC of 1.19 V with a PCE of 23.3% was demonstrated by Ce-SnO2 ETL-based PSCs (0.09 cm2 active area) that were treated with 2-phenethylamine hydroiodide on the perovskite top surface. Notably, the unencapsulated Ce-SnO2 ETL-based PSC was able to maintain above 90% of its initial PCE for around 2000 h which was stored under room temperature condition (23-25 °C) with a relative humidity of 40-50%.

Vacancy-Rich SnO2 Quantum Dot Stabilized by Polyoxomolybdate as Electrocatalyst for Selective NH3 Production.

The pronounced conductivity of tin dioxide (SnO2) nanoparticles makes it an ideal multifunctional electrode material, while the challenge is to stabilize the quantum dot (QD) SnO2 nanocore in water. An Anderson-type polyoxomolybdate, (NH4)6[Mo7O24], is employed as an inorganic ligand to stabilize a ca. 6 nm SnO2 QD (Mox@SnO2). X-ray scattering and diffraction studies confirm the tetragonal SnO2 nanocore in Mox@SnO2. Elemental analyses are in good agreement with the mass spectrometric detection of the [Mo7O24]6- cluster present in Mox@SnO2. The ionic POMs attached to the SnO2 surface through [Mo-O-Sn] covalent linkages have been established by surface zeta potential, shift of the [Mo = O]t Raman vibration, and extended X-ray absorption fine structure (EXAFS) analyses. The presence of the [Mo7O24]6- cluster in the Mox@SnO2 is responsible for the remarkable aqueous stability of Mox@SnO2 in the pH range of 3-9. Dominant oxygen vacancy in the SnO2 core, identified by EXAFS data and the anisotropic electron paramagnetic resonance (EPR) signals (g ∼ 2.4 and 1.9), results in facile electronic conduction in Mox@SnO2 while being deposited on the electrode surface. Mox@SnO2 acts as an active catalyst for the electrocatalytic nitrate reduction (eNOR) to ammonia with 94% faradaic efficiency (FE) at -0.2 V vs RHE and a yield rate of 28.9 mg h-1 cm-2. The stability of Mox@SnO2 in acidic pH provides scope to reuse the Mox@SnO2 electrode at least four times with notable NH3 selectivity and a superior production rate (239.06 mmol g-1(cat) h-1). This study demonstrates the essential role of POM in stabilizing SnO2 QD, harnessing its electrochemical activity toward electrocatalytic ammonia production.

Room temperature detection of aspergillus flavus volatile organic compounds (VOCs) under simulated conditions using graphene oxide and tin oxide Nanorods (SnO2 NRs-GO).

This study investigated the application of a hybrid nanocomposite of tin oxide nanorods (SnO2 NRs) and graphene oxide (GO) for the chemoresistive detection of some volatile compounds (hexanal, benzaldehyde, octanal, 1-octanol, and ethyl acetate vapours) emitted by Aspergillus flavus under simulated conditions. The synthesised materials were characterised using various analytical techniques, including high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) analysis, and Fourier transform infrared spectroscopy (FTIR). Three sensors were fabricated: individual nanomaterials (i.e., SnO2 and GO) and composites (SnO2-GO). The results showed that SnO2 NRs had limited sensitivity as a sensor, while GO-based sensors responded to various analyte vapours. However, the incorporation of SnO2 NRs into GO layers resulted in synergistic effects and improved sensor performance. The sensors' sensitivity, selectivity, recovery, and response times were quantitatively determined from the sensors' response curves. The nanocomposite sensor demonstrated superior sensitivity and selectivity for analyte vapours with acceptable response and recovery times. In addition, the sensor was insensitive to humidity and showed robust performance up to 62% RH, although sensor drift occurred at 70% RH. This study highlights the promising potential of using SnO2 NRs-GO composite-based sensor for sensitive and selective detection of analyte vapours, which has significant implications for food safety and environmental monitoring applications.

UV-Vis-NIR Broadband Self-Powered CuInS2/SnO2 Photodetectors and the Application in Encrypted Optical Communication.

Photodetectors (PDs) with broadband photoresponse can meet the demand for multiband detection in complex environments, overcoming the technological complexity issue of integrated narrow-band PDs. Self-powered heterojunction PDs having ultraviolet-visible-near-infrared broadband photoresponse were constructed by using SnO2 nanopillars and CuInS2 nanoflakes. The dimension, crystalline quality, and energy level structure of the SnO2 nanopillars were regulated by changing the concentration of Sn ions in the precursor solution. The optimized interfacial energy band structure of the heterojunction can increase the transfer ability of the photogenerated carrier. The optimum performance is achieved for the CuInS2/SnO2(0.025M) PD prepared at 0.025 M Sn ion concentration in the precursor solution with the responsivities of 1.15, 6.13, and 1.02 mA/W, and detectivities of 1.19 × 1010, 6.35 × 1010, and 1.02 × 1010 Jones under 254 nm solar-blind ultraviolet light, 475 nm visible light, and 940 nm near-infrared light. Furthermore, a proof-of-concept solar-blind ultraviolet-visible-near-infrared encrypted communication system utilizing a broadband self-powered CuInS2/SnO2 PD as the receiving terminal and solar-blind ultraviolet light, ultraviolet light, visible light, and near-infrared light as the carrier and encryption protocol is proposed. The PD has great potential for applications in the field of encrypted optical communication.

Ultrathin Boundary-Less SnO2 Films with Surface-Activated Two-Dimensional Nanograins Enable Fast and Sensitive Hydrogen Gas Sensing.

Fast and reliable semiconductor hydrogen sensors are crucially important for the large-scale utilization of hydrogen energy. One major challenge that hinders their practical application is the elevated temperature required, arising from undesirable surface passivation and grain-boundary-dominated electron transportation in the conventional nanocrystalline sensing layers. To address this long-standing issue, in the present work, we report a class of highly reactive and boundary-less ultrathin SnO2 films, which are fabricated by the topochemical transformation of 2D SnO transferred from liquid Sn-Bi droplets. The ultrathin SnO2 films are purposely made to consist of well-crystallized quasi-2D nanograins with in-plane grain sizes going beyond 30 nm, whereby the hydroxyl adsorption and grain boundary side-effects are effectively suppressed, giving rise to an activated (101)-dominating dangling-bond surface and a surface-controlled electrical transportation with an exceptional electron mobility of 209 cm2 V-1 s-1. Our work provides a new cost-effective strategy to disruptively improve the gas reception and transduction of SnO2. The proposed chemiresistive sensors exhibit fast, sensitive, and selective hydrogen sensing performance at a much-reduced working temperature of 60 °C. The remarkable sensing performance as well as the simple and scalable fabrication process of the ultrathin SnO2 films render the thus-developed sensors attractive for long awaited practical applications in hydrogen-related industries.

Defect Engineering for SnO2 Improves NO2 Gas Sensitivity by Plasma Spraying.

Large emissions of nitrogen dioxide (NO2) pose a significant threat to human health, Monitoring its content and implementing timely measures are crucial. Utilizing oxide semiconductors, such as tin dioxide (SnO2), has proven to be an effective way to detect and analyze NO2. The design and preparation of sensing materials with high sensitivity and excellent selectivity is the key to improve the detection efficiency. SnO2 nanopowders with small and uniform particle size, large specific surface area, adjustable defect content, and no impurities were prepared by a new plasma spraying method. The SnO2 nanopowders exhibit outstanding performance in detecting NO2 at a low temperature of 100 °C, the response to 5 ppm of NO2 reaches 48, and the material demonstrates rapid response and recovery times, coupled with excellent selectivity. The exceptional gas-sensitive properties can be attributed to the superior morphology and structure of SnO2. It provides more reaction sites for gas sensitive reactions, fast electron transport, a large number of charge carriers, and improved adsorption of the material to the target gas. This study provides valuable insights into nanomaterial preparation and the enhancement of gas-sensitive properties for SnO2.

Electronic Structure of Mg-, Si-, and Zn-Doped SnO2 Nanowires: Predictions from First Principles.

We investigated the electronic structure of Mg-, Si-, and Zn-doped four-faceted [001]- and [110]-oriented SnO2 nanowires using first-principles calculations based on the linear combination of atomic orbitals (LCAO) method. This approach, employing atomic-centered Gaussian-type functions as a basis set, was combined with hybrid density functional theory (DFT). Our results show qualitative agreement in predicting the formation of stable point defects due to atom substitutions on the surface of the SnO2 nanowire. Doping induces substantial atomic relaxation in the nanowires, changes in the covalency of the dopant-oxygen bond, and additional charge redistribution between the dopant and nanowire. Furthermore, our calculations reveal a narrowing of the band gap resulting from the emergence of midgap states induced by the incorporated defects. This study provides insights into the altered electronic properties caused by Mg, Si, and Zn doping, contributing to the further design of SnO2 nanowires for advanced electronic, optoelectronic, photovoltaic, and photocatalytic applications.