Unveiling the photocatalytic marvels: Recent advances in solar heterojunctions for environmental remediation and energy harvesting.

In the quest for effective solutions to address Environ. Pollut. and meet the escalating energy demands, heterojunction photocatalysts have emerged as a captivating and versatile technology. These photocatalysts have garnered significant interest due to their wide-ranging applications, including wastewater treatment, air purification, CO2 capture, and hydrogen generation via water splitting. This technique harnesses the power of semiconductors, which are activated under light illumination, providing the necessary energy for catalytic reactions. With visible light constituting a substantial portion (46%) of the solar spectrum, the development of visible-light-driven semiconductors has become imperative. Heterojunction photocatalysts offer a promising strategy to overcome the limitations associated with activating semiconductors under visible light. In this comprehensive review, we present the recent advancements in the field of photocatalytic degradation of contaminants across diverse media, as well as the remarkable progress made in renewable energy production. Moreover, we delve into the crucial role played by various operating parameters in influencing the photocatalytic performance of heterojunction systems. Finally, we address emerging challenges and propose novel perspectives to provide valuable insights for future advancements in this dynamic research domain. By unraveling the potential of heterojunction photocatalysts, this review contributes to the broader understanding of their applications and paves the way for exciting avenues of exploration and innovation.

High-temperature transport properties of a two-dimensional weakly doped parabolic semiconductor.

A version of the Mexican-hat Hamiltonian is used to study high-temperature transport properties of a two-dimensional weakly doped semiconductor with electron-hole symmetric bands. For a finite doping level and a temperature-dependent band gap, we find a closed analytical form of the temperature-dependent chemical potential. The effective concentrations of charge carriers participating in transport coefficients are analyzed in the space spanned by the total electron concentration and temperature. It is shown that these concentrations are the sum of a residual contribution and two thermally activated contributions, with a complicated dependence on temperature. The analytical expression for the Hall coefficient RHis also found. It is argued that it is a non-monotonic function of the doping level with the maximum at the doping nmax that is a linear function of temperature at high enough temperatures. The analysis of the real part of the interband conductivity shows that it is inversely proportional to incoming photon energy at low temperatures and that it is nearly constant over a wide energy range at high temperatures. This results are expected to be of significant importance in understanding transport and optical properties of weakly doped two-dimensional semiconductors with nearly symmetric parabolic bands. .

Evaluating the accuracy and reliability of non-piezo portable ultrasound devices in postpartum care.

INTRODUCTION: The early diagnosis of hemorrhage via postpartum ultrasound is crucial to initiate therapy and, thus, prevent maternal death. In these critical situations rapid availability and simple transport of ultrasound devices is vital, paving the way for a  new generation of portable handheld ultrasound devices (PUD) consisting of transducers and tablets or smart phones. However, evidence to confirm the diagnostic accuracy of these new devices is still scarce. METHODS: The accuracy and reliability of these new devices in relation to established standard ultrasound devices is analyses in this pilot study by comparing diagnoses and by applying statistical analysis via Bland-Altman plots, intraclass correlation coefficients (ICC), and Pearson correlation coefficients (PCC). One hundred patients of a university hospital were included in this study. RESULTS: In all cases, the same diagnosis was made regardless of the applied ultrasound device, confirming high accuracy. There was a high correlation (PCC 0.951) and excellent agreement (ICC 0.974) in the assessment of the cavum, while the assessment of the diameters of the uterus showed only a good correlation and a good agreement. Subgroup analysis for maternal weight, mode of delivery and day after delivery was performed  CONCLUSION: The same diagnosis independent of the used devices and excellent results of the cavum assessment promote the use of PUDs in a clinical setting. The slightly lower accuracy in the measurement of the uterus may be caused by the PUD's small acoustic window, reflecting one of its weaknesses. Therefore, the patient may benefit from the short time to diagnosis and the unbound location of examination, either in the delivery room, on the ward, or at home.

Designing Contact Independent High-Performance Low-Cost Flexible Electronics.

Organic semiconductors enable low-cost solution processing of optoelectronic devices on flexible substrates. Their use in contemporary applications, however, is sparse due to persistent challenges in achieving the requisite performance levels in a reliable and reproducible manner. A critical bottleneck is the inefficiency associated with charge injection. Here, large-scale simulations are employed to identify operational windows where key device parameters that are difficult to control experimentally, such as the contact resistance, become less consequential to overall device functionality. This design methodology overcomes injection barrier limitations in organic field-effect transistors (OFETs), leading to high charge carrier mobility and significantly expanding the range of suitable electrode materials. Leveraging this new understanding, all-organic, solution-deposited OFETs are successfully fabricated on flexible substrates. These devices incorporate printed contacts and showcase mobilities exceeding 5 cm2 Vs-1. These results provide a route for accessing the fundamental limits of material properties even in the absence of ideal contacts - a critical step in establishing reliable structure/property relationships and optimal material design paradigms. While reducing the injection barrier and contact resistance remains critical for achieving high OFET performance, this work demonstrates a path toward consistently achieving high charge carrier mobility through device geometry design, ultimately reducing processing complexity and cost.

Analyzing the structural, optoelectronic, and thermoelectric properties of InGeX3 (X = Br) perovskites via DFT computations.

The Electronic and optical properties of InGeX3(X = Cl, Br) were examined by adopting the density functional theory (DFT) approach. We applied the GGA + Trans-Blaha modified Becke-Johnson (TB-mBJ) technique to acquire the precise bandgap of 1.52 and 0.98 eV of the compounds InGeX3(X = Cl, Br) respectively which suggests the direct bandgap at (M-M). The stability of the material is confirmed by the formation energy (- 2.83 = Cl; - 2.35 = Br) and Mechanical stability. Primarily elastic constants were extracted for each of the materials under scrutiny, and these values then served to gauge all of the materials' mechanical properties. The assessed Poisson's and Pugh's ratios for the materials InGeCl3 and InGeBr3 were verified to identify the degree of ductility. The quasi-harmonic Debye model additionally covers the temperature and pressure dependence on thermodynamic parameters, particularly volume, specific heat capacity (Cv) at constant volume, and the Gruneisen parameter (γ) in the range of 0-800 K and 0-5 GPa. It is anticipated that InGeCl3 and InGeBr3 will have static dielectric constants of 4.01 and 5.74, respectively. InGeX3(X = Cl, Br) also reveals significant absorption in the high UV spectrum. The thermoelectric properties have also been calculated vdata-element-id="9QNfR3VHbcMHX_W0fJCYp" data-element-type="html" style="display: initial; visibility: initial; opacity: initial; clip-path: initial; position: relative; float: left; top: 0px; left: 0px; z-index: 1 !important; pointer-events: none;" />ia boltztrap2 code using a k mesh of around 1,50,000 points.

Carrier-Carrier Repulsion Limits the Conductivity of N-Doped Organic Semiconductors.

Molecular doping is a key strategy to enhance the electrical conductivity of organic semiconductors. Typically, the electrical conductivity shows a maximum value upon increased doping, after which the conductivity decreases. This decrease in conductivity is commonly attributed to unfavorable changes in the morphology. However, in recent simulation work, has shown, that the conductivity-at high doping-is instead limited by electron-electron repulsion rather than by morphology, at least for some material combinations. Based on the simulations, this limitation is expected to show up in the dependence of the Seebeck coefficient versus carrier density: the Seebeck coefficient will follow Heike's formula if carrier-carrier repulsion limits the conductivity. Here, the electrical conductivity and Seebeck coefficient are measured as a function of doping for a series of n-type organic semiconductors. Additionally, the resulting carrier density is measured using metal-insulator-semiconductor diodes, which link dopant loading and the number of charge carriers. At high carrier densities, the Seebeck coefficient indeed follows Heike's formula, confirming that the conductivity is limited by carrier-carrier repulsion rather than by morphological effects. This study shows that current models of hopping transport in organic semiconductors may be incomplete. As a result, this study offers novel insights in the design of organic semiconductors.

Room-Temperature Two-Dimensional InSe Plasmonic Laser.

Two-dimensional (2D) semiconductors, owing to their strong excitonic emission, are emerging as efficient gain media for constructing the ultimate nanolaser. The further integration of 2D semiconductors with plasmonic devices holds promise for realizing the thinnest laser. However, the implementation of 2D semiconductor plasmonic lasing is severely hindered by the limited cavity feedback and low gain resulting from insufficient plasmon-exciton interactions. Here, we report the realization of a room-temperature 2D semiconductor plasmonic laser by embedding an InSe nanoflake into a plasmonic Fabry-Perot (F-P) cavity. This plasmonic F-P cavity shows an exceptional ability to recycle the leaked dark surface plasmon, resulting in >2-fold enhancement of feedback compared to that of conventional metal-insulator-semiconductor nanolasers. Moreover, via combination of field enhancement and orientation matching, this cavity facilitates optimized plasmon-exciton coupling to ensure sufficient gain for sustaining room-temperature lasing. Our work may open up the possibilities for multifunctional photonic devices based on 2D materials.

Light-Modulated Humidity Sensing in Spiropyran Functionalized MoS2 Transistors.

The optically tuneable nature of hybrid organic/inorganic heterostructures tailored by interfacing photochromic molecules with 2D semiconductors (2DSs) can be exploited to endow multi-responsiveness to the exceptional physical properties of 2DSs. In this study, a spiropyran-molybdenum disulfide (MoS2) light-switchable bi-functional field-effect transistor is realized. The spiropyran-merocyanine reversible photo-isomerization has been employed to remotely control both the electron transport and wettability of the hybrid structure. This manipulation is instrumental for tuning the sensitivity in humidity sensing. The hybrid organic/inorganic heterostructure is subjected to humidity testing, demonstrating its ability to accurately monitor relative humidity (RH) across a range of 10%-75%. The electrical output shows good sensitivity of 1.0% · (%) RH-1. The light-controlled modulation of the sensitivity in chemical sensors can significantly improve their selectivity, versatility, and overall performance in chemical sensing.

Copper-surface-mediated synthesis of sp2 carbon-conjugated covalent organic framework photocathodes for photoelectrochemical hydrogen evolution.

Sp2-carbon (sp2-c) covalent organic frameworks (COFs), featuring distinctive π-conjugated network structures, facilitate the migration of photo-generated carriers, rendering them exceptionally appealing for applications in photoelectrochemical water splitting. However, owing to the powdery nature of COFs, leaving anchor the sp2-c COFs powder tightly onto a conductive substrate challenging. Here, we propose a method for preparing photoactive substance-conductive substrate integrated photocathodes through copper surface-mediated knoevenagel polycondensation (Cu-SMKP), this approach results in a uniform and stable sp2-c COF film, directly grown on commercial copper foam (COFTh-Cu). The COFTh-Cu demonstrates a high H2-evolution photocurrent density of 56 µA cm-2 at 0.3 V versus RHE, sustaining stability for 12 hours. The as-prepared COFTh-Cu represents a 4.5-fold increase in current density compared to traditional spin-coating methods and outperforms most COF photocathodes without cocatalysts. This innovative copper surface-mediated approach for preparing photocathodes opens up a crucial pathway towards the realization of highly active COF photocathodes.

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits.

As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

Application of PLA/GO/ZnO and PLA/GO/Cu2O as sensor.

Polylactic acid modified with graphene oxide (PLA/GO) is proposed to interact with ZnO through 6 different schemes. Density functional theory at B3LYP/LANL2DZ level was utilized to calculate total dipole moment (TDM), HOMO/LUMO energy gap (ΔE) and to map the molecular electrostatic potential (MESP). Results indicated that PLA/GO interacted with ZnO through O-atom forming PLA/GO/OZn composite. This composite interacts with methane, hydrogen sulfide, humidity (H2O), carbon dioxide and ethanol. The same gases were supposed to interact further with PLA/GO/Cu2O. Adsorption energy for the interaction between each composite and the proposed gases were calculated. Both PLA/GO/OZn and PLA/GO/Cu2O composites interacted favorably with H2O. Adsorption energy for interaction of other gases with studied structures are generally low compared to H2O. PLA/GO/OZn have adsorption energy slightly higher than that of PLA/GO/Cu2O. PLA/GO/OZn has higher TDM values than those of PLA/GO/Cu2O, indicating a more polar material. Conversely, PLA/GO/Cu2O exhibited larger ΔE values than those of PLA/GO/OZn. TDM and energy gap results for both studied structures indicated good sensing capabilities. Further insights come from analyzing the calculated density of states (DOS) and partial density of states (PDOS). PLA/GO/Cu2O exhibited high peak for copper in its DOS and PDOS spectra compared to zinc and oxygen in case of PLA/GO/OZn. This means a higher density of available electronic states associated with Cu.

Conjugated Polymer-Based Photo-Crosslinker for Efficient Photo-Patterning of Polymer Semiconductors.

Photo-patterning of polymer semiconductors using photo-crosslinkers has shown potential for organic circuit fabrication via solution processing techniques. However, the performance of patterning, including resolution (R), UV light exposure dose, sensitivity (S), and contrast (γ), remains unsatisfactory. In this study, a novel conjugated polymer based photo-crosslinker (PN3, Figure 1a) is reported for the first time, which entails phenyl-substituted azide groups in its side chains. Due to the potential π-π interactions between the conjugated backbone of PN3 and those of polymer semiconductors, PN3 exhibits superior miscibility with polymer semiconductors compared to the commonly used small molecule photo-crosslinker 4Bx (Figure 1a). Consequently, photo-patterning of polymer semiconductors with PN3 demonstrates improved performance with much lower UV light exposure dose, higher S and higher γ compared to 4Bx. By utilizing electron beam lithography, patterned arrays of polymer semiconductors with resolutions down to 500 nm and clearer edges are successfully fabricated using PN3. Furthermore, patterned arrays of PDPP4T, the p-type semiconductor (Figure 1b), after being doped, can function as source-drain electrodes for fabricating field-effect transistors (FETs) with comparable charge mobility and significantly lower sub-threshold swing value compared to those with gold electrodes.

Hydrogen Plasma Inhibits Ion Beam Restructuring of GaP.

Focused ion beam (FIB) techniques are employed widely for nanofabrication and processing of materials and devices. However, ion irradiation often gives rise to severe damage due to atomic displacements that cause defect formation, migration, and clustering within the ion-solid interaction volume. The resulting restructuring degrades the functionality of materials and limits the utility of FIB ablation and nanofabrication techniques. Here we show that such restructuring can be inhibited by performing FIB irradiation in a hydrogen plasma environment via chemical pathways that modify defect binding energies and transport kinetics, as well as material ablation rates. The method is minimally invasive and has the potential to greatly expand the utility of FIB nanofabrication techniques in processing functional materials and devices.

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology.

Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high-quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large - and especially large and thin - single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor-liquid-solid growth combined with direct lateral vapor-solid incorporation produces high-quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate-supported flakes where material is added via layer-by-layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm2 V-1 s-1, on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.

Coulomb Contribution to Shockley-Read-Hall Recombination.

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.

UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires.

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn-Ir-BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.

Boosted Near-Infrared Photothermal Conversion in Rare Earth Ions-Doped 2D SnSe Nanosheets for Solar-Powered Water Evaporation Systems.

Solar-powered water evaporation as a clean and abundant renewable energy-efficient desalination technology provides a promising strategy to solve the shortage of freshwater resources. However, the development and application of solar vapor technology are hindered by the relatively low near-infrared photothermal conversion efficiency of existing materials and the lack of effective improvement strategies. In this work, the conductivity characteristics of 2D semiconductors are capitalized on the high visible light absorption and ultra-low thermal. Specifically, rare-earth ion dopants into SnSe nanosheets, significantly boosting their near-infrared photothermal conversion efficiency and solar water evaporation performance are introduced. Remarkably, the photothermal conversion efficiency of the doped SnSe nanosheets surged from 51.56% to 82.11%, surpassing many previously reported photothermal materials. Furthermore, leveraging these nanosheets with enhanced photothermal conversion efficiency, a solar interfacial evaporation system is constructed. The evaporation rate of 2.17 kg m-2 h-1 and the efficiency of 96.5% can be achieved at one solar irradiance, and it also has good salt-resistance properties. The findings demonstrate the potential of rare earth ion-doped 2D semiconductor nanosheets in solar water evaporation, paving the way for future sustainable desalination solutions.

Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices.

The production of controlled doping in two-dimensional semiconductor materials is a challenging issue when introducing these systems into current and future technology. In some compounds, the coexistence of distinct crystallographic phases for a fixed composition introduces an additional degree of complexity for synthesis, chemical stability, and potential applications. In this work, we demonstrate that a multiphase In2Se3 layered semiconductor system, synthesized with three distinct structures─rhombohedral α and ß-In2Se3 and trigonal δ-In2Se3─exhibits chemical stability and well-behaved n-type doping. Scanning tunneling spectroscopy measurements reveal variations in the local electronic density of states among the In2Se3 structures, resulting in a compound system with electronic bandgaps that range from infrared to visible light. These characteristics make the layered In2Se3 system a promising candidate for multigap or broad spectral optical devices, such as detectors and solar cells. The ability to tune the electronic properties of In2Se3 through structural phase manipulation makes it ideal for integration into flexible electronics and the development of heterostructures with other materials.

Optically Tunable Many-Body Exciton-Phonon Quantum Interference.

This study introduces a novel paradigm for achieving widely tunable many-body Fano quantum interference in low-dimensional semiconducting nanostructures, beyond the conventional requirement of closely matched energy levels between discrete and continuum states observed in atomic Fano systems. Leveraging Floquet engineering, the remarkable tunability of Fano lineshapes is demonstrated, even when the original discrete and continuum states are separated by over 1 eV. Specifically, by controlling the quantum pathways of discrete phonon Raman scattering using femtosecond laser pulses, the Raman intermediate states across the excitonic Floquet band are tuned. This manipulation yields continuous transitions of Fano lineshapes from antiresonance to dispersive and to symmetric Lorentzian profiles, accompanied by significant variations in Fano parameter q and Raman intensity spanning 2 orders of magnitude. A subtle shift in the excitonic Floquet resonance is further shown, achieved by controlling the intensity of the femtosecond laser, which profoundly modifies quantum interference strength from destructive to constructive interference. The study reveals the crucial roles of Floquet engineering in coherent light-matter interactions and opens up new avenues for coherent control of Fano quantum interference over a broad energy spectrum in low-dimensional semiconducting nanostructures.

Perspectives for Photocatalytic Decomposition of Environmental Pollutants on Photoactive Particles of Soil Minerals.

The literature shows that both in laboratory and in industrial conditions, the photocatalytic oxidation method copes quite well with degradation of most environmental toxins and pathogenic microorganisms. However, the effective utilization of photocatalytic processes for environmental decontamination and disinfection requires significant technological advancement in both the area of semiconductor material synthesis and its application. Here, we focused on the presence and "photocatalytic capability" of photocatalysts among soil minerals and their potential contributions to the environmental decontamination in vitro and in vivo. Reactions caused by sunlight on the soil surface are involved in its normal redox activity, taking part also in the soil decontamination. However, their importance for decontamination in vivo cannot be overstated, due to the diversity of soils on the Earth, which is caused by the environmental conditions, such as climate, parent material, relief, vegetation, etc. The sunlight-induced reactions are just a part of complicated soil chemistry processes dependent on a plethora of environmental determinates. The multiplicity of affecting factors, which we tried to sketch from the perspective of chemists and environmental scientists, makes us rather skeptical about the effectiveness of the photocatalytic decontamination in vivo. On the other hand, there is a huge potential of the soils as the alternative and probably cheaper source of useful photocatalytic materials of unique properties. In our opinion, establishing collaboration between experts from different disciplines is the most crucial opportunity, as well as a challenge, for the advancement of photocatalysis.