Strain engineering of PtMn alloy enclosed by high-indexed facets boost ethanol electrooxidation.

Surface strain engineering has proven to be an efficient strategy to enhance catalytic properties of platinum (Pt)-based catalysts for electrooxidation reactions. Herein, the S-doped PtMn concave cubes (CNCs) enclosed with high index facets (HIFs) and regulatable surface strain are successfully fabricated by two steps hydrothermal method. The S element with electrophilic property can modify the near-surface of PtMn nanocrystals, altering the electronic structure of Pt to effectively regulate the adsorption/desorption of intermediates in the ethanol electrooxidation reaction (EOR). The PtMnS1.1 catalyst with optimal surface strain delivered extraordinary catalytic performance on EOR in acidic media, with a specific activity of 2.88 mA/cm2 and mass activity of 1.10 mA/µgPt, which is 4.1 and 2.2 times larger than that of state-of-the-art Pt/C catalyst, respectively. Additionally, the PtMnS1.1 catalyst also achieve excellent catalytic properties in alkaline electrolyte for EOR. The results of kinetic studies indicated that the surface strain and modified electronic structure can degrade the activation energy barrier during the process of EOR, which is beneficial for enhance the reaction rate. This work provides a promising approach to construct highly efficient electrocatalysts with tunable surface strain effects for clean energy electro-chemical reactions.

Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering.

4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed and the electron group velocity is significantly increased. The out-of-plane hole mobility of 4H-SiC can be greatly enhanced by ∼200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.

Application of Strain Engineering in Solar Cells.

Solar cells represent a promising innovation in energy storage, offering not only exceptional cleanliness and low cost but also a high degree of flexibility, rendering them widely applicable. In recent years, scientists have dedicated substantial efforts to enhancing the performance of solar cells, aiming to drive sustainable development and promote clean energy applications. One approach that has garnered significant attention is strain engineering, which involves the adjustment of material microstructure and organization through mechanical tensile or compressive strain, ultimately serving to enhance the mechanical properties and performance stability of materials. This paper aims to provide a comprehensive review of the latest advancements in the application of strain engineering in solar cells, focused on the current hot research area-perovskite solar cells. Specifically, it delves into the origins and characterization of strain in solar cells, the impact of strain on solar cell performance, and the methods for regulating stable strain. Furthermore, it outlines strategies for enhancing the power conversion efficiency (PCE) and stability of solar cells through strain engineering. Finally, the paper conducts an analysis of the challenges encountered in the development process and presents a forward-looking perspective on further enhancing the performance of solar cells through strain engineering.

Lattice-Strain Engineering in Ni-Ru Heterostructures for Efficient Acetylene Hydrochlorination toward Vinyl Chloride.

Ru-based catalysts have emerged as promising alternatives to HgCl2 in vinyl chloride monomer (VCM) production by acetylene hydrochlorination. However, poor C2H2 activation and the generation of key intermediates (*CH2═CH) have posed grand challenges for enhanced catalytic performances. Herein, we synthesized a Ni-intercalated Ru heterostructure using a lattice-strain engineering strategy, resulting in the desired electronic and chemical environments. The collaboration of Ni splits the adsorption centers of C2H2 and HCl by weakening the strong steric hindrance, and it also promotes the activation of the linear C≡C configurations. The well-controlled lattice strain enables strong d-d hybridization interactions between Ni and Ru, resulting in an upshift of the d-band center from -3.72 eV (for Ru/C) to -3.49 eV and electronic delocalization. This optimized local Ni-Ru/C structure thus enhances *H adsorption while weakening the energy barrier for generating *CH2═CH intermediates. Furthermore, the energy barrier for VCM formation was simultaneously reduced. Accordingly, the Ni-Ru/C heterostructures achieve improved performance in pilot-scale trials, with a conversion of >99.2% and stability for over 500 h. These performances significantly surpass most reported Ru-based moieties and the traditional Hg catalysts, offering a promising avenue for C2H2 activation in industrial applications.

Modulation of the Superconducting Phase Transition in Multilayer 2H-NbSe2 Induced by Uniform Biaxial Compressive Strain.

Strain is a powerful tool for tuning the properties of two-dimensional materials. Here, we investigated the effects of large, uniform biaxial compressive strain on the superconducting phase transition of multilayered 2H-NbSe2 flakes. We observed a consistent decrease in the critical temperature of NbSe2 flakes induced by the large thermal compression of a polymeric substrate (>1.2%) at cryogenic temperatures. For thin flakes (∼10 nm thick), a strong modulation of the critical temperature up to 1.5 K is observed, which monotonically decreases with increasing flake thickness. The effects of biaxial compressive strain remain significant even for relatively thick samples up to 80 nm thick, indicating efficient transfer of strain not only from the substrate to the flakes but also across several van der Waals layers. This work demonstrates that compressive strain induced from substrate thermal deformation can effectively tune phase transitions at low temperatures in 2D materials.

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates.

Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional strain-application methodologies relying on flexible/patterned/nanoindented substrates are limited by low thermal tolerance, poor tunability, and/or scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electromechanically coupled 2D MoS2. Electrical bias polarity change across the piezo film tunes the nature of strain transferred to MoS2 from compressive (∼0.23%) to tensile (∼0.14%) as verified through Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, on silicon substrate, integrates an MoS2 field-effect transistor on a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current (130×), on/off ratio (150×), and mobility (1.19×) with high precision, reversibility, and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, electrical strain modulation, and high thermal tolerance promise facile integration with silicon-based CMOS and micro-electromechanical systems.

Transfer of High-Temperature-Sputtered BiFeO3 Thin Films onto Flexible Substrates Using α-MoO3 Layers.

Inducing external strains on highly oriented thin films transferred onto mechanically deformable substrates enables a drastic enhancement of their ferroelectric, magnetic, and electronic performances, which cannot be achieved in films on rigid single crystals. Herein, the growth and diffusion behaviors of BiFeO3 thin films grown at various temperatures is reported on α-MoO3 layers of different thicknesses using sputtering. When the BiFeO3 thin films are deposited at a high temperature, significant diffusion of Fe into α-MoO3 occurs, producing the Fe1.89Mo4.11O7 phase and suppressing the maintenance of the 2D structure of the α-MoO3 layers. Although lowering the deposition temperature alleviates the diffusion yielding the survival of the α-MoO3 layer, enabling exfoliation, the BiFeO3 is amorphous and the formation of the Fe1.89Mo4.11O7 phase cannot be suppressed at the crystallization temperature. High-temperature-grown BiFeO3 thin films are successfully transferred onto flexible substrates via mechanical exfoliation by introducing a blocking layer of Au and measured the ferroelectric properties of the transferred films.

Thermomechanical Properties of Transition Metal Dichalcogenides Predicted by a Machine Learning Parameterized Force Field.

The mechanical and thermal properties of transition metal dichalcogenides (TMDs) are directly relevant to their applications in electronics, thermoelectric devices, and heat management systems. In this study, we use a machine learning (ML) approach to parametrize molecular dynamics (MD) force fields to predict the mechanical and thermal transport properties of a library of monolayered TMDs (MoS2, MoTe2, WSe2, WS2, and ReS2). The ML-trained force fields were then employed in equilibrium MD simulations to calculate the lattice thermal conductivities of the foregoing TMDs and to investigate how they are affected by small and large mechanical strains. Furthermore, using nonequilibrium MD, we studied thermal transport across grain boundaries. The presented approach provides a fast albeit accurate methodology to compute both mechanical and thermal properties of TMDs, especially for relatively large systems and spatially complex structures, where density functional theory computational cost is prohibitive.

Preparation and Modeling of Graphene Bubbles to Obtain Strain-Induced Pseudomagnetic Fields.

It has been both theoretically predicted and experimentally demonstrated that strain can effectively modulate the electronic states of graphene sheets through the creation of a pseudomagnetic field (PMF). Pressurizing graphene sheets into bubble-like structures has been considered a viable approach for the strain engineering of PMFs. However, the bubbling technique currently faces limitations such as long manufacturing time, low durability, and challenges in precise control over the size and shape of the pressurized bubble. Here, we propose a rapid bubbling method based on an oxygen plasma chemical reaction to achieve rapid induction of out-of-plane deflections and in-plane strains in graphene sheets. We introduce a numerical scheme capable of accurately resolving the strain field and resulting PMFs within the pressurized graphene bubbles, even in cases where the bubble shape deviates from perfect spherical symmetry. The results provide not only insights into the strain engineering of PMFs in graphene but also a platform that may facilitate the exploration of the strain-mediated electronic behaviors of a variety of other 2D materials.

Direct Melt-Calendaring of Highly Textured (Bi,Sb)2Te3 Thick Films: Superior Thermoelectric and Mechanical Performance via Strain Engineering.

The evolutions of chip thermal management and micro energy harvesting put forward urgent need for micro thermoelectric devices. Nevertheless, low-performance thermoelectric thick films as well as the complicated precision cutting process for hundred-micron thermoelectric legs still remain the bottleneck hindering the advancement of micro thermoelectric devices. In this work, an innovative direct melt-calendaring manufacturing technology is first proposed with specially designed and assembled equipment, that enables direct, rapid, and cost-effective continuous manufacturing of Bi2Te3-based films with thickness of hundred microns. Based on the strain engineering with external glass coating confinement and controlled calendaring deformation degree, enhanced thermoelectric performance has been achieved for (Bi,Sb)2Te3 thick films with highly textured nanocrystals, which can promote carrier mobility over 182.6 cm2 V-1 s-1 and bring out a record-high zT value of 0.96 and 1.16 for n-type and p-type (Bi,Sb)2Te3 thick films, respectively. The nanoscale interfaces also further improve the mechanical strength with excellent elastic modules (over 42.0 GPa) and hardness (over 1.7 GPa), even superior to the commercial zone-melting ingots and comparable to the hot-extrusion (Bi,Sb)2Te3 alloys. This new fabrication strategy is versatile to a wide range of inorganic thermoelectric thick films, which lays a solid foundation for the development of micro thermoelectric devices.

Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain.

Layer-engineered interlayer excitons from heterostructures of transition-metal dichalcogenides (TMDCs) exhibit a rich variety of emissive states and intriguing valley spin-selection rules, the effective modulation of which is crucial for excitonic physics and related device applications. Strain or high pressure provides the possibility to tune the energy of the interlayer excitons; however, the reported emission intensity is substantially quenched, which greatly limits their practical application in optoelectronic devices. Here, via applying uniaxial strain based on polyvinyl alcohol (PVA) encapsulation technique, we report enhanced layer-engineered interlayer exciton emission intensity with largely modulated emission energy in WSe2/WS2 heterobilayer and heterotrilayer. Both momentum-direct and momentum-indirect interlayer excitons were observed, and their emission energies show an opposite shift tendency upon applied strain, which agrees with our DFT calculations. We further demonstrate that intralayer and interlayer exciton states with low phonon interactions can be modulated through the mechanical strain applied to the PVA substrate at low temperatures. Due to strain-induced breaking of the 3-fold rotational symmetry, we observe the enhanced valley polarization of interlayer excitons. Our study contributes to the understanding and modulation of the optical properties of interlayer excitons, which could be exploited for optoelectronic device applications.

First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability.

Designing two-dimensional (2D) heterojunctions with rapid response and minimal energy consumption holds immense significance for the advancement of the next generation of electronic devices. Here, we construct a series of Schottky heterojunctions based on TiB4 monolayer and group-IV monochalcogenide monolayers MX (M = Ge, Sn; X = S, Se, Te). Using first-principles calculations, we investigate the structural stability, Schottky contact barrier, tunneling probability, and optical properties of MX/TiB4 heterojunctions. The calculated binding energies reveal that X-type MX/TiB4 heterojunctions exhibit more stable structures than M- and C-type stacking modes. Schottky barrier heights (SBHs) indicate that X-type GeSe/TiB4 and GeTe/TiB4 form n-type Schottky contacts with SBHs of 0.497 and 0.132 eV, respectively, while SnS/TiB4 and SnSe/TiB4 form p-type Schottky contacts with SBHs of 0.557 and 0.418 eV, respectively. Moreover, X-type MX/TiB4 heterojunctions exhibit high susceptibility to interlayer electron tunneling due to their large tunneling probability and strong interlayer interaction. Meanwhile, enhanced optical absorption capacity in MX/TiB4 heterojunctions is also observed compared with individual TiB4 and MX monolayers. By applying in-plane biaxial strain, the transformation of MX/TiB4 heterojunctions from a Schottky contact to an Ohmic contact can also be realized. Our findings could offer valuable candidate materials and guidance for the design of the next generation of nanodevices with high electronic and optical performances.

High-Entropy Transition Metal Phosphorus Trichalcogenides for Rapid Sodium Ion Diffusion.

High-entropy strategies are regarded as a powerful means to enhance performance in energy storage fields. The improved properties are invariably ascribed to entropy stabilization or synergistic cocktail effect. Therefore, the manifested properties in such multicomponent materials are usually unpredictable. Elucidating the precise correlations between atomic structures and properties remains a challenge in high-entropy materials (HEMs). Herein, atomic-resolution scanning transmission electron microscopy annular dark field (STEM-ADF) imaging and four dimensions (4D)-STEM are combined to directly visualize atomic-scale structural and electric information in high-entropy FeMnNiVZnPS3. Aperiodic stacking is found in FeMnNiVZnPS3 accompanied by high-density strain soliton boundaries (SSBs). Theoretical calculation suggests that the formation of such structures is attributed to the imbalanced stress of distinct metal-sulfur bonds in FeMnNiVZnPS3. Interestingly, the electric field concentrates along the two sides of SSBs and gradually diminishes toward the two-dimensional (2D) plane to generate a unique electric field gradient, strongly promoting the ion-diffusion rate. Accordingly, high-entropy FeMnNiVZnPS3 demonstrates superior ion-diffusion coefficients of 10-9.7-10-8.3 cm2 s-1 and high-rate performance (311.5 mAh g-1 at 30 A g-1). This work provides an alternative way for the atomic-scale understanding and design of sophisticated HEMs, paving the way for property engineering in multi-component materials.

Anisotropic optical property of ferroelectric Bi2O2X(X = S,Se,Te) monolayer and strain engineering.

Based on the first-principles calculations, ferroelectricBi2O2X(X=S,Se,Te)monolayers with unequivalent in-plane lattice constants are confirmed to be the ground state, which is consistent with the experiment result (Ghoshet al2019Nano Lett.195703-09), and the anisotropic optical property is firstly investigated. We find that the polarizations ofBi2O2Xmonolayers points along the direction ofa-axis, andBi2O2Temonolayer process the largest polarization. Furthermore, both the biaxial and uniaxial strains are favor for the enhancement of polarization ofBi2O2Xmonolayers. It should be mentioned that the type of band gap will convert from indirect to direct forBi2O2Temonolayer when thea-axial tensile strain is larger than 2%. At last, the optical absorption coefficient forBi2O2Xmonolayers are calculated, and we obtain thatBi2O2Temonolayer has the strongest optical absorption within the range of visible light, the anisotropy and possible strain engineering to improve the optical absorption are discussed in detail. Our findings are significant in fields of optoelectronics and photovoltaics.

Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain.

Two-dimensional electronic materials are a promising candidate for beyond-silicon electronics due to their favorable size scaling of electronic performance. However, a major challenge is the heterogeneous integration of 2D materials with CMOS processes while maintaining their excellent properties. In particular, there is a knowledge gap in how thin film deposition and processes interact with 2D materials to alter their strain and doping, both of which have a drastic impact on device properties. In this study, we demonstrate how to utilize process-induced strain, a common technique extensively applied in the semiconductor industry, to enhance the carrier mobility in 2D material transistors. We systematically varied the tensile strain in monolayer MoS2 transistors by iteratively depositing thin layers of high-stress MgOx stressor. At each thickness, we combined Raman spectroscopy and transport measurements to unravel and correlate the changes in strain and doping within each transistor with their performance. The transistors displayed uniform strain distributions across their channels for tensile strains of up to 0.48 ± 0.05%, at 150 nm of stressor thickness. At higher thicknesses, mechanical instability occurred, leading to nonuniform strains. The transport characteristics systematically varied with strain, with enhancement in electron mobility at a rate of 130 ± 40% per % strain and enhancement of the channel saturation current density of 52 ± 20%. This work showcases how established CMOS technologies can be leveraged to tailor the transport in 2D transistors, accelerating the integration of 2D electronics into a future computing infrastructure.

Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets.

As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.

Manipulating 2D Materials through Strain Engineering.

This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

Strain Engineering of Ion-Coordinated Nanochannels in Nanocellulose.

Expanding the interlayer spacing plays a significant role in improving the conductivity of a cellulose-based conductor. However, it remains a challenge to regulate the cellulose nanochannel expanded by ion coordination. Herein, starting from multiscale mechanics, we proposed a strain engineering method to regulate the interlayer spacing of the cellulose nanochannels. First-principles calculations were conducted to select the most suitable ions for coordination. Large-scale molecular dynamics simulations were performed to reveal the mechanism of interlayer spacing expansion by the ion cross-linking. Combining the shear-lag model, we established the relationship between interfacial cross-link density and interlayer spacing of an ion-coordinated cellulose nanochannel. Consequently, fast ion transport and current regulation were realized via the strain engineering of nanochannels, which provides a promising strategy for the current regulation of a cellulose-based conductor.

Giant Carrier Mobility in a Room-Temperature Ferromagnetic VSi2N4 Monolayer.

Using density functional theory (DFT), we investigate that two possible phases of VSi2N4 (VSN) may be realized, one called the "H phase" corresponding to what is known from calculation and herein the other new "T phase" being stabilized by a biaxial tensile strain of 3%. Significantly, the H phase is predicted to display a giant carrier mobility of 1 × 106 cm2 V-1 s-1, which exceeds that for most 2D magnetic materials, with a Curie temperature (TC) exceeding room temperature and a band gap of 2.01 eV at the K point. Following the H-T phase transition, the direct band gap shifts to the Γ point and increases to 2.59 eV. The Monte Carlo (MC) simulations also indicate that TC of the T phase VSN can be effectively modulated by strain, reaching room temperature under a biaxial strain of -4%. These results show that VSN should be a promising functional material for future nanoelectronics.