Size-Dependent Superconducting Properties of In Nanowire Arrays.

Arrays of superconducting nanowires may be useful as elements of novel nanoelectronic devices. The superconducting properties of nanowires differ significantly from the properties of bulk structures. For instance, different vortex configurations of the magnetic field have previously been predicted for nanowires with different diameters. In the present study, arrays of parallel superconducting In nanowires with the diameters of 45 nm, 200 nm, and 550 nm-the same order of magnitude as coherence length ξ-were fabricated by templated electrodeposition. Values of magnetic moment M of the samples were measured as a function of magnetic field H and temperature T in axial and transverse fields. M(H) curves for the arrays of nanowires with 45 nm and 200 nm diameters are reversible, whereas magnetization curves for the array of nanowires with 550 nm diameter have several feature points and show a significant difference between increasing and decreasing field branches. Critical fields increase with a decrease in diameter, and the thinnest nanowires exceed bulk critical fields by 20 times. The qualitative change indicates that magnetic field configurations are different in the nanowires with different diameters. Variation of M(H) slope in small fields, heat capacity, and the magnetic field penetration depth with the temperature were measured. Superconductivity in In nanowires is proven to exist above the bulk critical temperature.

Plasma modes in capacitively coupled superconducting nanowires.

We investigate plasma oscillations in long electromagnetically coupled superconducting nanowires. We demonstrate that in the presence of inter-wire coupling plasma modes in each of the wires get split into two "new" modes propagating with different velocities across the system. These plasma modes form an effective dissipative quantum environment interacting with electrons inside both wires and causing a number of significant implications for the low-temperature behavior of the systems under consideration.

Waveguide-integrated niobium- nitride detectors for on-chip quantum nanophotonics.

NbN-based detectors can detect light from the granular regime (single or few photons) up to weak continuous photon fluxes at wavelengths ranging from visible light up to mid-IR. The article reports our recent results on a novel linear detector, the waveguide-integrated hot electron bolometer (HEB) capable to measure photon fluxes of large coherent beams in a regime in which superconducting nanowire single photon detectors (SNSPDs) are not efficient due to their strong nonlinearity. SNSPDs, photon number resolving detectors and amplitude multiplexing readout schemes, all integrated on photonic circuits are also discussed in the paper. The compatibility of the integrated HEB detectors with the SNSPDs technology can allow the characterization of complex non classical states of light within the same chip.

Current-Resistance Effects Inducing Nonlinear Fluctuation Mechanisms in Granular Aluminum Oxide Nanowires.

The unusual superconducting properties of granular aluminum oxide have been recently investigated for application in quantum circuits. However, the intrinsic irregular structure of this material requires a good understanding of the transport mechanisms and, in particular, the effect of disorder, especially when patterned at the nanoscale level. In view of these aspects, electric transport and voltage fluctuations have been investigated on thin-film based granular aluminum oxide nanowires, in the normal state and at temperatures between 8 and 300 K. The nonlinear resistivity and two-level tunneling fluctuators have been observed. Regarding the nature of the noise processes, the experimental findings give a clear indication in favor of a dynamic random resistor network model, rather than the possible existence of a local ordering of magnetic origin. The identification of the charge carrier fluctuations in the normal state of granular aluminum oxide nanowires is very useful for improving the fabrication process and, therefore, reducing the possible sources of decoherence in the superconducting state, where quantum technologies that are based on these nanostructures should work.

Crystalline Niobium Carbide Superconducting Nanowires Prepared by Focused Ion Beam Direct Writing.

Superconducting planar nanostructures are widely used in applications, e.g., for highly sensitive magnetometers and in basic research, e.g., to study finite size effects or vortex dynamics. In contrast, 3D superconducting nanostructures, despite their potential in quantum information processing and nanoelectronics, have been addressed only in a few pioneering experiments. This is due to the complexity of fabricating 3D nanostructures by conventional techniques such as electron-beam lithography and to the scarce number of superconducting materials available for direct-writing techniques, which enable the growth of 3D free-standing nanostructures. Here, we present a comparative study of planar nanowires and free-standing 3D nanowires fabricated by focused electron- and ion (Ga+)-beam induced deposition (FEBID and FIBID) using the precursor Nb(NMe2)3(N- t-Bu). FEBID nanowires contain about 67 atomic percent C, 22 atomic percent N, and 11 atomic percent Nb, while FIBID samples are composed of 43 atomic percent C, 13 atomic percent N, 15.5 atomic percent Ga, and 28.5 atomic percent Nb. Transmission electron microscopy shows that FEBID samples are amorphous, while FIBID samples exhibit a fcc NbC polycrystalline structure, with grains about 15-20 nm in diameter. Electrical transport measurements show that FEBID nanowires are highly resistive following a variable-range-hopping behavior. In contradistinction, FIBID planar nanowires become superconducting at Tc ≈ 5 K. In addition, the critical temperature of free-standing 3D nanowires is as high as Tc ≈ 11 K, which is close to the value of bulk NbC. In conclusion, FIBID-NbC is a promising material for the fabrication of superconducting nanowire single-photon detectors (SNSPD) and for the development of 3D superconductivity with applications in quantum information processing and nanoelectronics.

Vortex Lattice Instabilities in YBa2Cu3O7-x Nanowires.

High-resolution focused ion beam lithography has been used to fabricate YBa2Cu3O7-x (YBCO) wires with nanometric lateral dimensions. In the present work, we investigate Flux-flow instabilities in nanowires of different widths, showing sudden voltage switching jumps from the superconducting to the normal state. We present an extensive study on the temperature and field dependence of the switching characteristics which reveal that voltage jumps become less abrupt as the temperature increases, and disappear at the vortex-liquid state. On the contrary, the current distribution at the critical point becomes narrower at high temperatures. Sharp voltage switchings very close to the critical current density can be obtained by reducing the width of the nanowires, making them very appealing for practical applications.

Healing Effect of Controlled Anti-Electromigration on Conventional and High-Tc Superconducting Nanowires.

The electromigration process has the potential capability to move atoms one by one when properly controlled. It is therefore an appealing tool to tune the cross section of monoatomic compounds with ultimate resolution or, in the case of polyatomic compounds, to change the stoichiometry with the same atomic precision. As demonstrated here, a combination of electromigration and anti-electromigration can be used to reversibly displace atoms with a high degree of control. This enables a fine adjustment of the superconducting properties of Al weak links, whereas in Nb the diffusion of atoms leads to a more irreversible process. In a superconductor with a complex unit cell (La2-x Cex CuO4 ), the electromigration process acts selectively on the oxygen atoms with no apparent modification of the structure. This allows to adjust the doping of this compound and switch from a superconducting to an insulating state in a nearly reversible fashion. In addition, the conditions needed to replace feedback controlled electromigration by a simpler technique of electropulsing are discussed. These findings have a direct practical application as a method to explore the dependence of the characteristic parameters on the exact oxygen content and pave the way for a reversible control of local properties of nanowires.