Using the G' Raman cross-section to understand the phonon dynamics in bilayer graphene systems.

The G' (or 2D) Raman band of AB stacked bilayer graphene comes from a double resonance Raman (DRR) process and is composed of four peaks (P(11), P(12), P(21), and P(22)). In this work, the integrated areas (IA) of these four peaks are analyzed as a function of the laser power for different laser lines. We show that the dependence of the IA of each peak on temperature is different for each distinct laser excitation energy. This special dependence is explained in terms of the electron-phonon coupling and the relaxation of the photon-excited electron. In this DRR process, the electron is scattered by an iTO phonon from a K to an inequivalent K' point of the Brillouin zone. Here, we show that this electron relaxes while in the conduction band before being scattered by an iTO phonon due to the short relaxation time of the excited electron, and the carrier relaxation occurs predominantly by emitting a low-energy acoustic phonon. The different combinations of relaxation processes determine the relative intensities of the four peaks that give rise to the G' band. Some peaks show an increase of their IA at the expense of others, thereby making the IA of the peaks both different from each other and dependent on laser excitation energy and on power level. Also, we report that the IA of the G' mode excited at 532 nm, shows a resonance regime involving ZO' phonons (related to the interlayer breathing mode in bilayer graphene systems) in which a saturation of what we call the P(12) process occurs. This effect gives important information about the electron and phonon dynamics and needs to be taken into account for certain applications of bilayer graphene in the field of nanotechnology.

Synthesis and characterization of selenium-carbon nanocables.

In this letter, we report the synthesis and characterization of a novel Se-C hybrid nanostructure. X-ray diffraction data indicates a high degree of crystallinity for the nanostructured Se shell. High resolution transmission electron microscopy images show that the Se-C nanostructures consist of coaxial nanocables made of single wall carbon nanotubes, as the core, surrounded by a trigonal Selenium shell. Resonance Raman spectroscopy was used to access the properties of both the carbon nanotubes and selenium. The behavior of the radial breathing mode and the G-band indicates that the Se shell primarily covers semiconducting nanotubes. X-ray photoelectron spectroscopy show that the nanocables have a thin coverage of selenium oxide. We envisage that this system could be used in the fabrication of photonic devices as an interface between electronic and photonic materials.

Studying disorder in graphite-based systems by Raman spectroscopy.

Raman spectroscopy has historically played an important role in the structural characterization of graphitic materials, in particular providing valuable information about defects, stacking of the graphene layers and the finite sizes of the crystallites parallel and perpendicular to the hexagonal axis. Here we review the defect-induced Raman spectra of graphitic materials from both experimental and theoretical standpoints and we present recent Raman results on nanographites and graphenes. The disorder-induced D and D' Raman features, as well as the G'-band (the overtone of the D-band which is always observed in defect-free samples), are discussed in terms of the double-resonance (DR) Raman process, involving phonons within the interior of the 1st Brillouin zone of graphite and defects. In this review, experimental results for the D, D' and G' bands obtained with different laser lines, and in samples with different crystallite sizes and different types of defects are presented and discussed. We also present recent advances that made possible the development of Raman scattering as a tool for very accurate structural analysis of nano-graphite, with the establishment of an empirical formula for the in- and out-of-plane crystalline size and even fancier Raman-based information, such as for the atomic structure at graphite edges, and the identification of single versus multi-graphene layers. Once established, this knowledge provides a powerful machinery to understand newer forms of sp(2) carbon materials, such as the recently developed pitch-based graphitic foams. Results for the calculated Raman intensity of the disorder-induced D-band in graphitic materials as a function of both the excitation laser energy (E(laser)) and the in-plane size (L(a)) of nano-graphites are presented and compared with experimental results. The status of this research area is assessed, and opportunities for future work are identified.

Strain-induced interference effects on the resonance Raman cross section of carbon nanotubes.

In this Letter, we report the effects of strain on the electronic properties of single-wall carbon nanotubes. When we normalize the electronic transition energies to the corresponding values obtained for unstrained tubes, we obtain that, regardless of the tube diameter, all the data collapse onto universal curves following an n - m = constant family pattern. In the case of metallic tubes, quantum interference effects on the Raman cross section are predicted for strained tubes when the energies of the lower and the upper components have nearly the same values. Experimental evidence for the strain-induced Raman cross section changes is observed in single nanotube spectroscopy.

Determination of nanotubes properties by Raman spectroscopy.

The basic concepts and characteristics of Raman spectra from single-wall carbon nanotubes (SWNTs, both isolated and bundled) are presented. The physical properties of the SWNTs are introduced, followed by the conceptual framework and characteristics of their Raman spectra. Each Raman feature, namely the radial breathing mode, the tangential G band, combination modes and disorder-induced bands are discussed, addressing their physical origin, as well as their capability for characterizing SWNT properties.

One-dimensional character of combination modes in the resonance Raman scattering of carbon nanotubes.

Resonance Raman spectroscopy with an energy tunable system is used to analyze the 600-1100 cm(-1) spectral region in single-wall carbon nanotubes. Sharp peaks are associated with the combination of zone folded optic and acoustic branches from 2D graphite. These combination modes exhibit a peculiar dependence on the excitation laser energy that is explained on the basis of a highly selective resonance process that considers phonons and electrons in low dimensional materials.

Anisotropy of the Raman spectra of nanographite ribbons.

A polarized Raman study of nanographite ribbons on a highly oriented pyrolytic graphite substrate is reported. The Raman peak of the nanographite ribbons exhibits an intensity dependence on the light polarization direction relative to the nanographite ribbon axis. This result is due to the quantum confinement of the electrons in the 1D band structure of the nanographite ribbons, combined with the anisotropy of the light absorption in 2D graphite, in agreement with theoretical predictions.