ABSTRACT
Metal-semiconductor (M-S) contacts play a vital role in advanced applications, serving as crucial components in ultracompact devices and exerting a significant impact on overall device performance. Here, in this work, we design a M-S nanoheterostructure between a metallic NbS2 monolayer and a semiconducting BSe monolayer using first-principles prediction. The stability of such an M-S nanoheterostructure is verified and its electronic and optical properties are also considered. Our results indicate that the NbS2/BSe nanoheterostructure is structurally, mechanically and thermally stable. The formation of the NbS2/BSe heterostructure leads to the generation of a Schottky contact with the Schottky barrier ranging from 0.36 to 0.51 eV, depending on the stacking configurations. In addition, the optical absorption coefficient of the NbS2/BSe heterostructure can reach up to 5 × 105 cm-1 at a photon energy of about 5 eV, which is still greater than that in the constituent NbS2 and BSe monolayers. This finding suggests that the formation of the M-S NbS2/BSe heterostructure gives rise to an enhancement in the optical absorption of both NbS2 and BSe monolayers. Notably, the tunneling probability and the contact tunneling-specific resistivity at the interface of the NbS2/BSe heterostructure are low, indicating its applicability in emerging nanoelectronic devices, such as Schottky diodes and field-effect transistors. Our findings offer valuable insights for the practical utilization of electronic devices based on the NbS2/BSe heterostructure.
ABSTRACT
In this study, Er3+ doped ZnO semiconductor quantum dots (QDs) were synthesized using a wet chemical method. The successful doping of Er3+ ions into the ZnO host lattice and the elemental composition was confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The ZnO and Er3+ doped ZnO QDs with a hexagonal structure, spherical shape, and particle size of approximately 5 nm were revealed by XRD and transmission electron microscopy (TEM). The absorption, luminescence properties, and fluorescence lifetimes of the samples were studied as the concentration of Er3+ ions varied. The intensity parameters, emission transition probabilities, branching ratios, and emission lifetimes of the excited levels of Er3+ ions in the ZnO host were determined using the Judd-Ofelt theory, which provided insight into the covalent relationship between the ions and ligands as well as the nature of the ZnO host lattice. Moreover, the energy transfer process from the ZnO host to Er3+ ions and the yield of this process are explained in detail along with specific calculations. The Er3+ doped ZnO QDs displayed a significantly longer lifetime than undoped ZnO, which opens up many potential applications in fields such as photocatalysis, optoelectronics, photovoltaics, and biosensing.
