[Reports of prostate needle biopsies-what pathologists provide and urologists want]. / Befundbericht zu Prostatastanzbiopsien ­ was Pathologen liefern und Urologen wollen.

BACKGROUND: The prostate biopsy report is key for risk stratification of prostate cancer patients and subsequent therapeutic decision-making. However, due to the inclusion of a multitude of additional parameters its interpretation is becoming more challenging. OBJECTIVES: We aimed to determine how urologists currently interpret prostate biopsy reports, in particular how they consider different histopathological parameters for therapy decision-making. MATERIALS AND METHODS: A survey was sent to all urology practices in Germany with the help of the BDU (Berufsverband der Deutschen Urologen e. V.). In total, there were 106 complete responses that could be included for further analyses. RESULTS: Most urologists consider the number of positive cores and relative tumor burden (%) per core as crucial for the assessment of tumor extension. In case of targeted biopsies, the majority of urologists prefers a separate statement of positive cores per random biopsy scheme and per region of interest, respectively. The core with the highest Gleason score is mostly the basis for therapy decision-making (versus the overall Gleason score). Proportion of Gleason 4 pattern also seems to be critical for prostate cancer management. Only half of the urologists demand reporting of the new ISUP/WHO (International Society of Urological Pathology/World Health Organization) grade groups. Additional parameters claimed are Ki67, prostate-specific membrane antigen status, presence of intraductal or neuroendocrine component of the tumor. CONCLUSIONS: Our survey shows that there is no standardized reporting for prostate biopsies and that the interpretation of prostate biopsy reports varies among urologists. Further studies and guideline recommendations are necessary to establish a standardized reporting scheme for prostate biopsies.

Ag-assisted CBE growth of ordered InSb nanowire arrays.

We present growth studies of InSb nanowires grown directly on [Formula: see text] and [Formula: see text] substrates. The nanowires were synthesized in a chemical beam epitaxy (CBE) system and are of cubic zinc blende structure. To initiate nanowire nucleation we used lithographically positioned silver (Ag) seed particles. Up to 87% of the nanowires nucleate at the lithographically pre-defined positions. Transmission electron microscopy (TEM) investigations furthermore showed that, typically, a parasitic InSb thin film forms on the substrates. This thin film is more pronounced for InSb((111)B) substrates than for InAs((111)B) substrates, where it is completely absent at low growth temperatures. Thus, using InAs((111)B) substrates and growth temperatures below 360 °C free-standing InSb nanowires can be synthesized.

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties.

This paper summarizes some of the essential aspects of silicon-nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon-wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon-wire growth via the vapor-liquid-solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs-Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.