ABSTRACT
Terahertz lights are usually generated through the optical rectification process within a femtosecond laser pulse in noncentrosymmetric materials. Here, we report a new generation mechanism of terahertz lights based upon a photoinduced phase transition, in which an electronic structure is rapidly changed by a photoirradiation. When a ferroelectric organic molecular compound, tetrathiafulvalene-p-chloranil, is excited by a femtosecond laser pulse, the ionic-to-neutral transition is driven and simultaneously a strong terahertz radiation is produced. By analyzing the terahertz electric-field waveforms and their dependence on the polarization direction of the incident laser pulse, we demonstrate that the terahertz radiation originates from the ultrafast decrease of the spontaneous polarization in the photoinduced ionic-to-neutral transition. The efficiency of the observed terahertz radiation via the photoinduced phase transition mechanism is found to be much higher than that via the optical rectification in the same material and in a typical terahertz emitter, ZnTe.
ABSTRACT
High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, which can induce strong electromagnetic fields in ferromagnetic films within an extremely short time of less than ~1 ps, is promising for damping-free high-speed coherent control of the magnetization. Here, we successfully observe a terahertz response in a ferromagnetic-semiconductor thin film. In addition, we find that a similar terahertz response is observed even in a non-magnetic semiconductor and reveal that the electric-field component of the terahertz pulse plays a crucial role in the magnetization response through the spin-carrier interactions in a ferromagnetic-semiconductor thin film. Our findings will provide new guidelines for designing materials suitable for ultrafast magnetization reversal.
ABSTRACT
Multiferroics with coexistent ferroelectric and magnetic orders can provide an interesting laboratory to test unprecedented magnetoelectric (ME) responses and their possible applications. One such example is the dynamical and/or resonant coupling between magnetic and electric dipoles in a solid. As examples of such dynamical ME effects, (i) the multiferroic domain wall dynamics and (ii) the electric dipole active magnetic responses are discussed with an overview of recent experimental observations.
Subject(s)
Ferric Compounds/chemistry , Magnetics , Calcium Compounds/chemistry , Electricity , Electromagnetic Fields , Electronics , Magnetic Resonance Spectroscopy , Manganese Compounds/chemistry , Models, Statistical , Oxides/chemistry , Titanium/chemistryABSTRACT
Terahertz (THz) radiation has been observed from multiferroic BiFeO3 thin films via ultrafast modulation of spontaneous polarization upon carrier excitation with illumination of femtosecond laser pulses. The radiated THz pulses from BiFeO3 thin films were clarified to directly reflect the spontaneous polarization state, giving rise to a memory effect in a unique style and enabling THz radiation even at zero-bias electric field. On the basis of our findings, we demonstrate potential approaches to ferroelectric nonvolatile random access memory with nondestructive readability and ferroelectric domain imaging microscopy using THz radiation as a sensitive probe.
ABSTRACT
Terahertz (THz) radiation from voltage-biased photoswitching devices made on magnetoresistive manganite Pr0.7Ca0.3MnO3 have been investigated for thin films grown under different conditions. We find that the temperature dependence of THz radiation near the charge-ordering temperature strongly depends on the growth condition of Pr0.7Ca0.3MnO3, whereas THz radiation shows no such temperature dependence near the spin-ordering temperature.
