Ti2Au2C and Ti3Au2C2 formed by solid state reaction of gold with Ti2AlC and Ti3AlC2.

Incorporation of layers of noble metals in non-van der Waals layered materials may be used to form novel layered compounds. Recently, we demonstrated a high-temperature-induced exchange process of Au with Si in the layered phase Ti3SiC2, resulting in the formation of Ti3AuC2 and Ti3Au2C2. Here, we generalize this technique showing that Au/Ti2AlC and Au/Ti3AlC2 undergo an exchange reaction at 650 °C to form Ti2Au2C and Ti3Au2C2 and determine their structures by electron microscopy, X-ray diffraction, and ab initio calculations. These results imply that noble-metal-containing layered phases should be possible to synthesize in many systems. The metal to be introduced should be inert to the transition-metal carbide layers, and exhibit negative heat of mixing with the initial A element in a liquid phase or two-phase liquid/solid region at the annealing temperature.

Novel material concepts of transducers for chemical and biosensors.

The objectives of this work are to contribute to the knowledge about physical and chemical properties of WBG semiconductors, such as ZnO and GaN towards development of advanced bio- and chemical sensors. For the semiconductors, growth techniques typically yielding single crystal material are applied. Thin epitaxial quality films of ZnO and GaN are fabricated on SiC or sapphire substrates. An emphasis is given to ZnO due to the interesting combination of the semiconductor and oxide properties. Surface bio-functionalization of ZnO is performed by APTES, MPA or MP-TMS molecules. We have compared some of the results to (hydroxylated) GaN surfaces functionalized by MP-TMS. The covalent attachment of the self-assembled biomolecular layers has been proven by XPS analysis. For complementary electrical characterization impedance spectroscopy measurements were performed. The results are intended to serve the realization of bioelectronic transducer devices based on SiC or GaN transistors with a ZnO gate layer. To take advantage of the catalytic properties of ZnO, initial prototypes of chemical sensors for gas sensing are processed on ZnO deposited either on SiC or on sapphire and they are further tested for the response to reducing or oxidizing gas ambient. The sensor devices show sensitivity to oxygen in the surface resistivity mode while a Pt Schottky contact ZnO/SiC device responds to reducing gases. These results are compared to published results on Pt/GaN Schottky diodes.