Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry.

We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary metal-oxide-semiconductor (CMOS) readout circuitry. The device is fabricated using the back end of line (BEOL) layers of the AMS 0.35 µm commercial CMOS technology, interconnecting two metal layers with a contact layer. The fabricated device has a 6 fL capacity and has one of the smallest embedded channels so far. It is able to attain a mass sensitivity of 25 ag/Hz using a fully integrable electrical transduction.

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.