ABSTRACT
A solid-state approach for quantum networks is advantageous, as it allows the integration of nanophotonics to enhance the photon emission and the utilization of weakly coupled nuclear spins for long-lived storage. Silicon carbide, specifically point defects within it, shows great promise in this regard due to the easy of availability and well-established nanofabrication techniques. Despite of remarkable progresses made, achieving spin-photon entanglement remains a crucial aspect to be realized. In this Letter, we experimentally generate entanglement between a silicon vacancy defect in silicon carbide and a scattered single photon in the zero-phonon line. The spin state is measured by detecting photons scattered in the phonon sideband. The photonic qubit is encoded in the time-bin degree of freedom and measured using an unbalanced Mach-Zehnder interferometer. Photonic correlations not only reveal the quality of the entanglement but also verify the deterministic nature of the entanglement creation process. By harnessing two pairs of such spin-photon entanglement, it becomes straightforward to entangle remote quantum nodes at long distance.
ABSTRACT
Quantum non-Gaussianity, a more potent and highly useful form of nonclassicality, excludes all convex mixtures of Gaussian states and Gaussian parametric processes generating them. Here, for the first time, we conclusively test quantum non-Gaussian coincidences of entangled photon pairs with the Clauser-Horne-Shimony-Holt-Bell factor S=2.328±0.004 from a single quantum dot with a depth up to 0.94±0.02 dB. Such deterministically generated photon pairs fundamentally overcome parametric processes by reducing crucial multiphoton errors. For the quantum non-Gaussian depth of the unheralded (heralded) single-photon state, we achieve the value of 8.08±0.05 dB (19.06±0.29 dB). Our Letter experimentally certifies the exclusive quantum non-Gaussianity properties highly relevant for optical sensing, communication, and computation.
ABSTRACT
The refractive index is a critical parameter in optical and photonic device design. However, due to the lack of available data, precise designs of devices working in low temperatures are still frequently limited. In this work, we have built a homemade spectroscopic ellipsometer (SE) and measured the refractive index of GaAs at a matrix of temperatures (4 K < T < 295 K) and photon wavelengths (700 nm < λ < 1000 nm) with a system error of â¼0.04. We verified the credibility of the SE results by comparing them with afore-reported data at room temperature and with higher precision values measured by vertical GaAs cavity at cryogenic temperatures. This work makes up for the lack of the near-infrared refractive index of GaAs at cryogenic temperatures and provides accurate reference data for semiconductor device design and fabrication.
Subject(s)
Photons , Refractometry , Temperature , SemiconductorsABSTRACT
The minimum-energy formation strategy for interconnected networks with distributed formation protocols is persented, where the impacts of the total energy restriction and the interaction silence are analyzed, respectively. The critical feature of this article is that the distributed formation and the minimum-energy restriction are realized simultaneously, and the total energy restriction is minimum in the sense of the linear matrix inequality. However, the guaranteed-cost formation strategy and the limited-budget formation strategy cannot guarantee that the energy restriction is minimum. Firstly, sufficient conditions for minimum-energy-restriction formation without the interaction silence are proposed, which can be solved by a specific optimization approach in terms of the linear matrix inequality, and the formation whole motion trajectory is determined, which is closely related to the average of the initial states of all agents and formation control vectors. Then, minimum-energy-restriction formation criteria for interconnected systems with the interaction silence are proposed by introducing two inhibition parameters and the interaction silence rate. Finally, two simulation examples are performed to illustrate the effectiveness of theoretical analyses.
ABSTRACT
Semiconductor quantum dots, as promising solid-state platform, have exhibited deterministic photon pair generation with high polarization entanglement fidelity for quantum information applications. However, due to temporal correlation from inherently cascaded emission, photon indistinguishability is limited, which restricts their potential scalability to multi-photon experiments. Here, by utilizing quantum interferences to decouple polarization entanglement from temporal correlation, we improve four-photon Greenberger-Horne-Zeilinger (GHZ) state entanglement fidelity from (58.7±2.2)% to (75.5±2.0)%. Our work paves the way to realize scalable and high-quality multi-photon states from quantum dots.
ABSTRACT
Dielectric materials with high refractive index have been widely studied to develop novel photonic devices for modulating optical signals. In this paper, the microfibers were modified by silicon nanoparticles (NPs) and silver NPs mixed in UV glue with ultra-low refractive index, respectively, whose corresponding optical and sensing properties have been studied and compared. The influence from either the morphological parameters of microfiber or the concentration of NPs on the refractive index sensing performance of microfiber has been investigated. The refractive index sensitivities for the microfiber tapers elaborated with silver NPs and silicon NPs were experimentally demonstrated to be 1382.3 nm/RIU and 1769.7 nm/RIU, respectively. Furthermore, the proposed microfiber was encapsulated in one cut of capillary to develop a miniature temperature probe, whose sensitivity was determined as 2.08 nm/°C, ranging from 28 °C to 43 °C.