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1.
Sci Rep ; 7: 42044, 2017 02 14.
Article in English | MEDLINE | ID: mdl-28195193

ABSTRACT

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.

2.
Article in English | MEDLINE | ID: mdl-25768477

ABSTRACT

We extend the quantum jump method to nearly adiabatically driven open quantum systems in a way that allows for an accurate account of the external driving in the system-environment interaction. Using this framework, we construct the corresponding trajectory-dependent work performed on the system and derive the integral fluctuation theorem and the Jarzynski equality for nearly adiabatic driving. We show that such identities hold as long as the stochastic dynamics and work variable are consistently defined. We numerically study the emerging work statistics for a two-level quantum system and find that the conventional diabatic approximation is unable to capture some prominent features arising from driving, such as the continuity of the probability density of work. Our results reveal the necessity of using accurate expressions for the drive-dressed heat exchange in future experiments probing jump time distributions.

3.
Article in English | MEDLINE | ID: mdl-25353760

ABSTRACT

As quantum systems become more experimentally accessible, we are forced to reconsider the notions of control and work to fully account for quantum effects. To this end, we identify the work injected into a quantum system during a general quantum-mechanical driving protocol and quantify the relevant heat flows. The known results that are applicable in the limit of a classical drive are shown to emerge from our equations as a special case. Using the established framework, we show that the Bochkov-Kuzovlev identity for the exclusive work distribution is modified in a nontrivial way by the accumulation of system-drive correlations resulting from quantum back action. Our results accentuate the conceptual and discernible differences between a fully quantum-mechanical and classical driving protocols of quantum systems.

4.
Sci Rep ; 3: 1987, 2013.
Article in English | MEDLINE | ID: mdl-23759710

ABSTRACT

We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in a well defined manner in order to provide a hot or cold environment for the qubit, as desired. Furthermore, introducing superconducting quantum interference devices (SQUIDs) into the cavity containing the resistor, provides control of the coupling strength between this artificial environment and the qubit. We demonstrate that our scheme allows us to couple strongly to the environment enabling rapid initialization of the system, and by subsequent tuning of the magnetic flux of the SQUIDs we may greatly reduce the resistor-qubit coupling, allowing the qubit to evolve unhindered.

5.
Phys Rev Lett ; 100(19): 196802, 2008 May 16.
Article in English | MEDLINE | ID: mdl-18518472

ABSTRACT

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2-30 K at low frequency (f=600-850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F ~ 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

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