Assessing the Role of Yarn Placement in Plated Knit Strain Sensors: A Detailed Study of Their Electromechanical Properties and Applicability in Bending Cycle Monitoring.

In this study, we explore how the strategic positioning of conductive yarns influences the performance of plated knit strain sensors fabricated using commercial knitting machines with both conductive and non-conductive yarns. Our study reveals that sensors with conductive yarns located at the rear, referred to as 'purl plated sensors', exhibit superior performance in comparison to those with conductive yarns at the front, or 'knit plated sensors'. Specifically, purl plated sensors demonstrate a higher sensitivity, evidenced by a gauge factor ranging from 3 to 18, and a minimized strain delay, indicated by a 1% strain in their electromechanical response. To elucidate the mechanisms behind these observations, we developed an equivalent circuit model. This model examines the role of contact resistance within varying yarn configurations on the sensors' sensitivity, highlighting the critical influence of contact resistance in conductive yarns subjected to wale-wise stretching on sensor responsiveness. Furthermore, our findings illustrate that the purl plated sensors benefit from the vertical movement of non-conductive yarns, which promotes enhanced contact between adjacent conductive yarns, thereby improving both the stability and sensitivity of the sensors. The practicality of these sensors is confirmed through bending cycle tests with an in situ monitoring system, showcasing the purl plated sensors' exceptional reproducibility, with a standard deviation of 0.015 across 1000 cycles, and their superior sensitivity, making them ideal for wearable devices designed for real-time joint movement monitoring. This research highlights the critical importance of conductive yarn placement in sensor efficacy, providing valuable guidance for crafting advanced textile-based strain sensors.

Selective Spin Dewetting for Perovskite Solar Modules Fabricated on Engineered Au/ITO Substrates.

We introduce a novel method for fabricating perovskite solar modules using selective spin-coating on various Au/ITO patterned substrates. These patterns were engineered for two purposes: (1) to enhance selectivity of monolayers primarily self-assembling on the Au electrode, and (2) to enable seamless interconnection between cells through direct contact of the top electrode and the hydrophobic Au connection electrode. Utilizing SAMs-treated Au/ITO, we achieved sequential selective deposition of the electron transport layer (ETL) and the perovskite layer on the hydrophilic amino-terminated ITO, while the hole transport layer (HTL) was deposited on the hydrophobic CH3-terminated Au connection electrodes. Importantly, our approach had a negligible impact on the series resistance of the solar cells, as evidenced by the measured specific contact resistivity of the multilayers. A significant outcome was the production of a six-cell series-connected solar module with a notable average PCE of 8.32%, providing a viable alternative to the conventional laser scribing technique.

Combined Ultraviolet Ozone and Thermally Activated Formamidinium Iodide Solution to Fabricate Large Grain FAPbI2.6Br0.3Cl0.1 Films.

In this report, we report the fabrication of a large grain and high crystallinity perovskite film by combined ultraviolet-ozone (UVO) and thermal treatment of formamidinium iodide solution during the fabrication of formamidinium lead halide (FAPbI2.6Br0.3Cl0.1) films by a two-step deposition method. In this process, lead halide films were treated with UVO-treated FAI at different times. In addition, we have observed that hot-casting of UVO-assisted FAI nucleates the α-FAPbI3 phase in as-prepared films. Again, we observed that the annealed hot-cast UVO-assisted FAI increased the grain size and crystallinity in the films. It was observed that the perovskite film fabricated using 10 min UVO-treated FAI solution shows the highest power conversion efficiency (PCE) up to 17.74%. Furthermore, the perovskite film fabricated with the hot-cast at 120 °C with the 10 min UVO-treated FAI solution improved the PCE to 19.22%. This finding would help with fabrication of large grain, smooth, uniform, and pinhole perovskite films by combining UVO and thermally assisted FAI solution.

Effects of the PbBr2:PbI2 Molar Ratio on the Formation of Lead Halide Thin Films, and the Ratio's Application for High Performance and Wide Bandgap Solar Cells.

We investigate the effects of the molar ratio (x) of PbBr2 on the phases, microstructure, surface morphology, optical properties, and structural defects of mixed lead halides PbI2(1-x)Br2x for use in solar cell devices. Results indicate that as x increased to 0.3, the surface morphology continued to improve, accompanied by the growth of PbI2 grains. This resulted in lead halide films with a very smooth and continuous morphology, including large grains when the film was formed at x = 0.3. In addition, the microstructure changed from (001)-oriented pure PbI2 to a highly (001)-oriented ß (PbI2-rich) phase. The plausible mechanism for the enhanced morphology of the lead halide films by the addition of PbBr2 is proposed based on the growth of a Br-saturated lead iodide solid solution. Furthermore, iodine vacancies, identified by X-ray photoelectron spectroscopy, decreased as the ratio of PbBr2 increased. Finally, an electrical analysis of the solar cells was performed by using a PN heterojunction model, revealing that structural defects, such as iodine vacancies and grain boundaries, are the main contributors to the degradation of the performance of pure PbI2-based solar cells (including high leakage, low stability, and high hysteresis), which was significantly improved by the addition of PbBr2. The solar cell fabricated at x = 0.3 in air showed excellent stability and performance. The device lost merely 20% of the initial efficiency of 4.11% after 1500 h without encapsulation. This may be due to the dense microstructure and the reduced structural defects of lead halides formed at x = 0.3.

An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals.

In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe) chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO) and tri-n-octylphosphine (TOP) and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene) polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern-Volmer quenching constant (K SV) and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor-acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe). Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications.