Scanning Plasmon-Enhanced Microscopy for Simultaneous Optoelectrical Characterization.

Scanning microscopy methods are crucial for the advancement of nanoelectronics. However, the vertical nanoprobes in such techniques suffer limitations such as the fragility at the tip-sample interface, complex instrumentation, and the lack of in operando functionality in several cases. Here, we introduce scanning plasmon-enhanced microscopy (SPEM) and demonstrate its capabilities on MoS2 and WSe2 nanosheets. SPEM combines a nanoparticle-on-mirror (NPoM) configuration with a portable conductive cantilever, enabling simultaneous optical and electrical characterization. This distinguishes it from other current techniques that cannot provide both characterizations simultaneously. It offers a competitive optical resolution of 600 nm with local enhancement of optical signal up to 20,000 times. A single gold nanoparticle with a 15 nm radius forms pristine, nondamaging van der Waals contact, which allows observation of unexpected p-type behavior of MoS2 at the nanoscale. SPEM reconstructs the NPoM method by eliminating the need for extensive statistical analysis and offering excellent nanoscale mapping resolution of any selected region. It surpasses other scanning techniques in combining precise optical and electrical characterization, interactive simplicity, tip durability, and reproducibility, positioning it as the optimal tool for advancing nanoelectronics.

Electrical and Optical Properties of Co75Si15B10 Metallic Glass Nanometric Thin Films.

Co-based (Co75Si15B10) thin-film metallic glass (TFMG) with nanometric thicknesses (100~300 nm) was investigated for its structural, electrical, and optical properties. The TFMG structure was examined using scanning electron microscopy and X-ray diffraction, while electrical properties were examined using inductance/capacitance/resistance spectroscopy, cyclic voltammetry, and Hall effect measurements. In addition, optical absorption/reflection/transmittance measurements were performed to examine optical properties. Results revealed that Co-based TFMGs, which have an amorphous structure without surface defects, behave like a dielectric material, with higher resistivity and much lower carrier concentration than pure cobalt (Co) thin films of the same thickness, despite its mobility being modestly larger than its Co counterparts. Meanwhile, the optical investigation of TFMG enabled us to determine the complex relative permittivity (complex relative dielectric constant) ϵr˜ at a visible wavelength (632.8 nm). Moreover, unlike normal metals, TFMGs exhibited a large positive value of the real part of ϵr˜, while exhibiting properties of substantial absorption of light (absorption coefficient α). It was also found that the Co-based TFMG gained optical transparency for thicknesses less than 5 nm. TFMGs demonstrated the nearly thickness-independent properties of the electrical and optical parameters probed, a feature of high-index, dielectric-like material with negligible size effects, which may have applications in micrometer-scaled optoelectronic and magneto-optical devices.