Chemochromism and Tunable Acoustic Phonons in Intercalated MoO3: Ag-, Bi-, In-, Mo-, Os-, Pd-, Pt-, Rh-, Ru-, Sb-, and W-MoO3.

Intercalation of several elements (Ag, Bi, In, Mo, Os, Pd, Pt, Rh, Ru, Sb, and W) is used to chemically alter a wide range of properties of two-dimensional layered α-MoO3. Intercalation modifies acoustic phonons and elastic constants, as measured with Brillouin scattering. Intercalation alters electronic bandgaps, color, structure, Raman shifts, and electron binding energies. Optical chemochromism is demonstrated with intercalants changing the color of MoO3 from transparent to brilliant blue (In, Mo, Os, and Ru) and orange (Ag). Correlations are investigated among material properties. There is evidence that in-plane longitudinal stiffness c11 correlates with changes in the bandgap, while various Raman modes appear to be connected to a variety of properties, including shear modulus c55, Mo binding energies, lattice constants, and the preferred crystal structure of the intercalant. The results indicate a surprising degree of complexity, suggesting competition among multiple distinct mechanisms and interactions involving specific intercalant species.

Machine Learning for Predicting Ultralow Thermal Conductivity and High ZT in Complex Thermoelectric Materials.

Efficient and precise calculations of thermal transport properties and figures of merit, alongside a deep comprehension of thermal transport mechanisms, are essential for the practical utilization of advanced thermoelectric materials. In this study, we explore the microscopic processes governing thermal transport in the distinguished crystalline material Tl9SbTe6 by integrating a unified thermal transport theory with machine learning-assisted self-consistent phonon calculations. Leveraging machine learning potentials, we expedite the analysis of phonon energy shifts, higher-order scattering mechanisms, and thermal conductivity arising from various contributing factors, such as population and coherence channels. Our finding unveils an exceptionally low thermal conductivity of 0.31 W m-1 K-1 at room temperature, a result that closely correlates with experimental observations. Notably, we observe that the off-diagonal terms of heat flux operators play a significant role in shaping the overall lattice thermal conductivity of Tl9SbTe6, where the ultralow thermal conductivity resembles that of glass due to limited group velocities. Furthermore, we achieve a maximum ZT value of 3.17 in the c-axis orientation for p-type Tl9SbTe6 at 600 K and an optimal ZT value of 2.26 in the a-axis and b-axis direction for n-type Tl9SbTe6 at 500 K. The crystalline Tl9SbTe6 not only showcases remarkable thermal insulation but also demonstrates impressive electrical properties owing to the dual-degeneracy phenomenon within its valence band. These results not only elucidate the underlying reasons for the exceptional thermoelectric performance of Tl9SbTe6 but also suggest potential avenues for further experimental exploration.

Making Patterned Single Defects in MoS2 Thermally with the MoS2/Au Moiré Interface.

Normally, it is hard to regulate thermal defects precisely in their host lattice due to the stochastic nature of thermal activation. Here, we demonstrate a thermal annealing way to create patterned single sulfur vacancy (VS) defects in monolayer molybdenum disulfide (MoS2) with about 2 nm separations at subnanometer accuracy. Theoretically, we reveal that the S-Au interface coupling reduces the energy barriers in forming VS defects and that explains the overwhelming formation of interface VS defects. We also discover a phonon regulation mechanism by the moiré interface that effectively condenses the Γ-point out-of-plane acoustic phonons of monolayer MoS2 to its TOP moiré sites, which has been proposed to trigger moiré-patterned thermal VS formation. The high-throughput nanoscale patterned defects presented here may contribute to building scalable defect-based quantum systems.

Thermal Relaxation in Janus Transition Metal Dichalcogenide Bilayers.

In this work, we employ molecular dynamics simulations with semi-empirical interatomic potentials to explore heat dissipation in Janus transition metal dichalcogenides (JTMDs). The middle atomic layer is composed of either molybdenum (Mo) or tungsten (W) atoms, and the top and bottom atomic layers consist of sulfur (S) and selenium (Se) atoms, respectively. Various nanomaterials have been investigated, including both pristine JTMDs and nanostructures incorporating inner triangular regions with a composition distinct from the outer bulk material. At the beginning of our simulations, a temperature gradient across the system is imposed by heating the central region to a high temperature while the surrounding area remains at room temperature. Once a steady state is reached, characterized by a constant energy flux, the temperature control in the central region is switched off. The heat attenuation is investigated by monitoring the characteristic relaxation time (τav) of the local temperature at the central region toward thermal equilibrium. We find that SMoSe JTMDs exhibit thermal attenuation similar to conventional TMDs (τav~10-15 ps). On the contrary, SWSe JTMDs feature relaxation times up to two times as high (τav~14-28 ps). Forming triangular lateral heterostructures in their surfaces leads to a significant slowdown in heat attenuation by up to about an order of magnitude (τav~100 ps).

Real Topological Phonons in 3D Carbon Allotropes.

There has been a significant focus on real topological systems that enjoy space-time inversion symmetry and lack spin-orbit coupling. While the theoretical classification of the real topology has been established, more progress has yet to be made in the materials realization of real topological phononic states in 3D. To address this crucial issue, high-throughput computing is performed to inspect the real topology in the phonon spectrums of the 3D carbon allotropes. Among 1661 carbon allotropes listed in the Samara Carbon Allotrope Database (SACADA), 79 candidates host a phononic real Chern insulating (PRCI) state, 2 candidates host a phononic real nodal line (PRNL) state, 12 candidates host a phononic real Dirac point (PRDP) state, and 10 candidates host a phononic real triple-point pair (PRTPP) state. The PRCI, PRNL, PRTPP, and PRDP states of 27-SG. 166-pcu-h, 1081-SG. 194-42T13-CA, 52-SG. 141-gis, and 132-SG. 191-3,4T157 are exhibited as illustrative examples, and the second-order phononic hinge modes are explored. This study broadens the understanding of 3D topological phonons and expands the material candidates with phononic hinge modes and phononic real topology.

Novel Superhard Boron Nitrides, B2N3 and B3N3: Crystal Chemistry and First-Principles Studies.

Tetragonal and hexagonal hybrid sp3/sp2 carbon allotropes C5 were proposed based on crystal chemistry and subsequently used as template structures to identify new binary phases of the B-N system, specifically tetragonal and hexagonal boron nitrides, B2N3 and B3N3. The ground structures and energy-dependent quantities of the new phases were computed within the framework of quantum density functional theory (DFT). All four new boron nitrides were found to be cohesive and mechanically (elastic constants) stable. Vickers hardness (HV), evaluated by various models, qualified all new phases as superhard (HV > 40 GPa). Dynamically, all new boron nitrides were found to be stable from positive phonon frequencies. The electronic band structures revealed mainly conductive behavior due to the presence of π electrons of sp2-like hybrid atoms.

Polarized Raman Study of First-Order Phonons in Self-Flux Grown Single-Crystalline WTe2.

Bulk single crystals of WTe2 were grown by the self-flux method and characterized by X-ray diffraction, polarized micro-Raman spectroscopy, and optical microscopy. All methods revealed a high crystalline quality, thus demonstrating the advantages of the growth method used as a starting base for the synthesis of high-quality 2D materials. In each main scattering configuration, we recorded a series of Raman spectra in different sample orientations achieved by rotating the sample around the incident laser beam. In addition to the well-established case of excitation along the c crystal axis, we also applied laser excitation along the a and b axes. Thus, scattering configurations were also realized in the XZ and YZ polarization planes, for which no comparative literature data have yet been established. In these experiments, two new Raman-active phonons with B2 symmetry and frequencies of 89 cm-1 and 122 cm-1 were identified. The obtained experimental data enabled us to derive the magnitude ratios of all three tensor elements of the A1 modes and to find their phase differences.

Ultrafast Polarization-Resolved Phonon Dynamics in Monolayer Semiconductors.

Monolayer transition metal dichalcogenide semiconductors exhibit unique valleytronic properties interacting strongly with chiral phonons that break time-reversal symmetry. Here, we observed the ultrafast dynamics of linearly and circularly polarized E'(Γ) phonons at the Brillouin zone center in single-crystalline monolayer WS2, excited by intense, resonant, and polarization-tunable terahertz pulses and probed by time-resolved anti-Stokes Raman spectroscopy. We separated the coherent phonons producing directional sum-frequency generation from the incoherent phonon population emitting scattered photons. The longer incoherent population lifetime than what was expected from coherence lifetime indicates that inhomogeneous broadening and momentum scattering play important roles in phonon decoherence at room temperature. Meanwhile, the faster depolarization rate in circular bases than in linear bases suggests that the eigenstates are linearly polarized due to lattice anisotropy. Our results provide crucial information for improving the lifetime of chiral phonons in two-dimensional materials and potentially facilitate dynamic control of spin-orbital polarizations in quantum materials.

Phonon Directionality Impacts Electron-Phonon Coupling and Polarization of the Band-Edge Emission in Two-Dimensional Metal Halide Perovskites.

Two-dimensional metal halide perovskites are highly versatile for light-driven applications due to their exceptional variety in material composition, which can be exploited for the tunability of mechanical and optoelectronic properties. The band-edge emission is defined by the structure and composition of both organic and inorganic layers, and electron-phonon coupling plays a crucial role in the recombination dynamics. However, the nature of the electron-phonon coupling and what kind of phonons are involved are still under debate. Here we investigate the emission, reflectance, and phonon response from single two-dimensional lead iodide microcrystals with angle-resolved polarized spectroscopy. We find an intricate dependence of the emission polarization with the vibrational directionality in the materials, which reveals that several bands of low-frequency phonons with nonorthogonal directionality contribute to the band-edge emission. Such complex electron-phonon coupling requires adequate models to predict the thermal broadening of the emission and provides opportunities to design polarization properties.

Ultralow Thermal Conductivity in Vacancy-Ordered Halide Perovskite Cs3Bi2Br9 with Strong Anharmonicity and Wave-Like Tunneling of Low-Energy Phonons.

Halide perovskites are of great interest due to their exceptional optical and optoelectronic properties. However, thermal conductivity of many halide perovskites remains unexplored. In this study, an ultralow lattice thermal conductivity κL (0.24 W m-1 K-1 at 300 K) is reported and its weak temperature dependence (≈T-0.27) in an all-inorganic vacancy-ordered halide perovskite, Cs3Bi2Br9. The intrinsically ultralow κL can be attributed to the soft low-lying phonon modes with strong anharmonicity, which have been revealed by combining experimental heat capacity and Raman spectroscopy measurements, and first-principles calculations. It is shown that the highly anharmonic phonons originate from the Bi 6s2 lone pair expression with antibonding states of Bi 6s and Br 4p orbitals driven by the dynamic BiBr6 octahedral distortion. Theoretical calculations reveal that these low-energy phonons are mostly contributed by large Br motions induced dynamic distortion of BiBr6 octahedra and large Cs rattling motions, verified by the synchrotron X-ray pair distribution function analysis. In addition, the weak temperature dependence of κL can be traced to the wave-like tunneling of phonons, induced by the low-lying phonon modes. This work reveals the strong anharmonicity and wave-like tunneling of low-energy phonons for designing efficient vacancy-ordered halide perovskites with intrinsically low κL.

Phonon mode at interface and its impact on interfacial thermal transport.

Due to the minimization and integration of micro/nano-devices, the high density of interfaces becomes a significant challenge in various applications. Phonon modes at interface resulting from the mismatch between inhomogeneous functional counterparts are crucial for interfacial thermal transport and overall thermal management of micro/nano-devices, making it a topic of great research interest recently. Here, we comprehensively review the recent advances on the theoretical and experimental investigations of interfacial phonon mode and its impact on interfacial thermal transport. Firstly, we summarize the recent progresses of the theoretical and experimental characterization of interfacial phonon modes at various interfaces, along with the overview of the development of diverse methodologies. Then, the impact of interfacial phonon modes on interfacial thermal transport process are discussed from the normal modal decomposition and inelastic scattering mechanisms. Meanwhile, we examine various factors influencing the interfacial phonon modes and interfacial thermal transport, including temperature, interface roughness, interfacial mass gradient, interfacial disorder, and so on. Finally, an outlook is provided for future studies. This review provides a fundamental understanding of interfacial phonon modes and their impact on interfacial thermal transport, which would be beneficial for the exploration and optimization of thermal management in various micro/nano-devices with high density interfaces.

A theory of phonon-induced friction on molecular adsorbates.

In this manuscript, we provide a general theory for how surface phonons couple to molecular adsorbates. Our theory maps the extended dynamics of a surface's atomic vibrational motions to a generalized Langevin equation, and by doing so captures these dynamics in a single quantity: the non-Markovian friction. The different frequency components of this friction are the phonon modes of the surface slab weighted by their coupling to the adsorbate degrees of freedom. Using this formalism, we demonstrate that physisorbed species couple primarily to acoustic phonons while chemisorbed species couple to dispersionless local vibrations. We subsequently derive equations for phonon-adjusted reaction rates using transition state theory and demonstrate that these corrections improve agreement with experimental results for CO desorption rates from Pt(111).

Thermal Rectification in Graphene-Boron Nitride Nanotube Hybrid Structures: An Independent Control Mechanism for Forward and Backward Heat Flux.

The weak van der Waals interactions in the out-of-plane direction result in markedly low thermal conductivity in one-dimensional (1D) and two-dimensional (2D) materials, which substantially restricts their applications. Developing three-dimensional (3D) columnar hybrid structures, featuring high thermal conductivity both within and beyond the plane, effectively addresses this challenge. This study investigated a 3D hybrid structure composed of graphene and boron nitride nanotubes (GR-BNNTs) using non-equilibrium molecular dynamics simulations. This approach allowed the examination of the formation mechanisms and key factors influencing thermal rectification (TR) in these materials. Our findings reveal a novel mechanism for independently regulating forward and backward heat fluxes in GR-BNNTs. By manipulating the thermal properties of the BNNTs and the graphene layer, the TR ratio can be controlled flexibly. Additionally, we identify specific strategies for independently adjusting the heat flux, such as altering the intercolumn distance of BNNTs, which impacts the backward flux merely, while applying strain to affect the forward flux merely. This research introduces a novel concept of independent regulation of forward and backward heat fluxes, providing significant insights into phonon thermal transport in 3D hybrid structures.

Lattice dynamics and free energies of Fe-V alloys with thermal and chemical disorder.

Molecular dynamics simulations of Fe-V binary alloys with body-centered cubic as the underlying lattice were performed using a classical potential for chemically ordered and disordered states at finite temperatures for a common set of volumes. The equation of state was fitted to the computational data to obtain temperature- and chemical-order-dependent state functions via the Moruzzi-Janak-Schwarz approximation. Additionally, vibrational entropies that account for both thermal and chemical disorder were calculated for the equiatomic compositions from phonon density-of-states curves computed using effective force constants obtained from fits to the simulations. The latter predicts that the vibrational entropy at room temperature at equiatomicity is higher for the ordered phase than for the solid solution, a peculiar behavior previously observed experimentally. The internal energy of mixing favors ordering at all compositions, with a maximum at equiatomicity that decreases as the solute concentration decreases. The configurational entropy contribution to the free energy of mixing is almost entirely responsible for the stability of the high-temperature disordered phase.

Phonon screening and dissociation of excitons at finite temperatures from first principles.

The properties of excitons, or correlated electron-hole pairs, are of paramount importance to optoelectronic applications of materials. A central component of exciton physics is the electron-hole interaction, which is commonly treated as screened solely by electrons within a material. However, nuclear motion can screen this Coulomb interaction as well, with several recent studies developing model approaches for approximating the phonon screening of excitonic properties. While these model approaches tend to improve agreement with experiment, they rely on several approximations that restrict their applicability to a wide range of materials, and thus far they have neglected the effect of finite temperatures. Here, we develop a fully first-principles, parameter-free approach to compute the temperature-dependent effects of phonon screening within the ab initio [Formula: see text]-Bethe-Salpeter equation framework. We recover previously proposed models of phonon screening as well-defined limits of our general framework, and discuss their validity by comparing them against our first-principles results. We develop an efficient computational workflow and apply it to a diverse set of semiconductors, specifically AlN, CdS, GaN, MgO, and [Formula: see text]. We demonstrate under different physical scenarios how excitons may be screened by multiple polar optical or acoustic phonons, how their binding energies can exhibit strong temperature dependence, and the ultrafast timescales on which they dissociate into free electron-hole pairs.

Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance.

The coupling of charge and phonon transport in solids is a long-standing issue for thermoelectric performance enhancement. Herein, two new narrow-gap semiconductors with the same chemical formula of GeSe0.65Te0.35 (GST) are rationally designed and synthesized: one with a layered hexagonal structure (H-GST) and the other with a non-layered rhombohedral structure (R-GST). Thanks to the three-dimensional (3D) network structure, R-GST possesses a significantly larger weighted mobility than H-GST. Surprisingly, 3D-structured R-GST displays an extremely low lattice thermal conductivity of ∼0.5 W m-1 K-1 at 523 K, which is comparable to that of layered H-GST. The two-dimensional (2D)-like phonon transport in R-GST stems from the unique off-centering Ge atoms that induce ferroelectric instability, yielding soft polar phonons, as demonstrated by the Boson peak detected by the low-temperature specific heat and calculated phonon spectra. Furthermore, 1 mol % doping of Sb is utilized to successfully suppress the undesired phase transition of R-GST toward H-GST at elevated temperatures. Consequently, a peak ZT of 1.1 at 623 K is attained in the rhombohedral Ge0.99Sb0.01Se0.65Te0.35 sample, which is 1 order of magnitude larger than that of GeSe. This work demonstrates the feasibility of exploring high-performance thermoelectric materials with decoupled charge and phonon transport in off-centering compounds.

Mapping of Long-Wavelength Phonon Contribution in the Thermal Transport of Alloyed Semiconductor Superlattices.

The mapping of long-wavelength phonons is important to understand and manipulate the thermal transport in multilayered structures, but it remains a long-standing challenge due to the collective behaviors of phonons. In this study, an experimental demonstration of mapping the long-wavelength phonons in an alloyed Al0.1Ga0.9As/Al0.9Ga0.1As superlattice system is reported. Multiple strategies to filter out the short- to mid-wavelength phonons are used. The phonon mean-free-path-dependent thermal transport properties directly demonstrate both the suppression effect of the ErAs nanoislands and the contribution of long-wavelength phonons. The contribution from phonons with mean free path longer than 1 µm is clearly demonstrated. A model based on the Boltzmann transport equation is proposed to calculate and describe the thermal transport properties, which depicts a clear physical picture of the transport mechanisms. This method can be extended to map different wavelength phonons and become a universal strategy to explore their thermal transport in various application scenarios.

Understanding the depolarization phenomena in (1-x) Na0.5Bi0.5TiO3. (x) Ba0.85Ca0.15Ti0.90Zr0.10O3solid solutions usingin-situtemperature dependent Raman spectroscopy.

A decrease in depolarization temperature (Td) from 456 K to 352 K was observed with an increase in BCZT substitution in the NBT for the (1-x) Na0.5Bi0.5TiO3. (x) Ba0.85Ca0.15Ti0.90Zr0.10O3solid solutions. A transition towards a higher ergodic state was elucidated with an increase in BCZT content that helped to reduce the free energy barrier, hence lesser thermal energy was required to depolarize the modified systems. Furthermore, a decrease in remnant polarization and coercive field, coupled with an increase in energy storage (Wstored) and efficiency (η%) with higher BCZT content.In-situtemperature-dependent Raman spectra provide additional insights, highlighting the faster changes in phonon shifts and lifetimes corresponding to the A-O, B-O, and BO6vibrations around the depolarization temperature (Td). The observed phase transformation to aP4bm phase at temperatures significantly higher thanTdis substantiated by Raman shift and phonon lifetime variations in the modes associated with the A-O and B-O vibrations. The transitions can be understood as: atT∼Tdthe polar nano regions (PNRs) start to appear due to weakening of bonds,T>Tdall the long-range ferroelectric domains transform to PNRs converting the material to a fully ergodic state, and at much higher temperatures (T≫Td) theR3c PNRs vanish andP4bm PNRs appear.

High Q-Factor Diamond Optomechanical Resonators with Silicon Vacancy Centers at Millikelvin Temperatures.

Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices, such as optomechanical crystals (OMCs), provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong for interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a line width of 13 kHz (Q-factor of ∼4.4 × 105) for a 6 GHz acoustic mode, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art line widths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path toward a coherent spin-phonon interface.

Circular Polarization-Resolved Raman Optical Activity: A Perspective on Chiral Spectroscopies of Vibrational States.

Circular polarization-resolved Raman scattering methods include Raman optical activity (ROA) and its derivative─surface-enhanced Raman optical activity (SEROA). These spectroscopic modalities are rapidly developing due to their high information content, stand-off capabilities, and rapid development of Raman-active chiral nanostructures. These methods enable a direct readout of the vibrational energy levels of chiral molecules, crystals, and nanostructured materials, making it possible to study complex interactions and the dynamic interfaces between them. They were shown to be particularly valuable for nano- and biotechnological fields encompassing complex particles with nanoscale chirality that combine strong scattering and intense polarization rotation. This perspective dives into recent advancements in ROA and SEROA, their distinction from surface-enhanced Raman scattering, and the potential of these information-rich label-free spectroscopies for the detection of chiral biomolecules.