Recent Progress of 2D Materials-Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications.

Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.

The Perovskite Optoelectronic Devices - A Look at the Future.

The perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near-infrared regions. This review presents the status and possible future development of the perovskite devices such as solar cells, photodetectors, and light-emitting diodes. The fundamental properties of perovskite materials related to their effective device applications are summarized. Since the development of the perovskite technology is mainly driven by the revolutionary evolution of the semiconductor perovskite solar cell as a robust candidate for next-generation solar energy harvesting, this topic is considered first. The device engineering of various perovskite photodetector structures, including perovskite quantum dot photodetectors, is then discussed in detail. Their performance is compared with the current commercial photodetectors available on the global market together with their challenges. Finally, the considerable progress in the fabrication of the perovskite light-emitting diodes with external quantum efficiency exceeding 20% is presented. The paper is completed in an attempt to determine the development of perovskite optoelectronic devices in the future.

Self-Driven Graphene Photodetector Arrays Enabled by Plasmon-Induced Asymmetric Electric Field.

Gap surface plasmon (GSP) modes enhance graphene photodetectors (GPDs)' performance by confining the incident light within nanogaps, giving rise to strong light absorption. Here, we propose an asymmetric plasmonic nanostructure array on planar graphene comprising stripe- and triangle-shaped sharp tip arrays. Upon light excitation, the noncentrosymmetric metallic nanostructures show strong light-matter interactions with localized field close to the surface of tips, causing an asymmetric electric field. These features can accelerate the hot electron generation in graphene, forming a directional diffusion current. Accordingly, the artificial GPDs exhibit a wavelength-dependence behavior covering the wavelength range from 0.8 to 1.6 µm, with three photoresponse maxima corresponding to the nanostructures' resonances. Additionally, the polarization-dependent GPDs can realize a responsivity of ∼25 mA/W and a noise equivalent power of ∼0.44 nW/Hz1/2 at zero bias when excited at the resonance of 1.4 µm. Overall, our study offers a new strategy for preparing compact and multifrequency infrared GPDs.

Synergistic Effect of Ionic Liquid and Embedded QDs on 2D Ferroelectric Perovskite Films with Narrow Phase Distribution for Self-Powered and Broad-Band Photodetectors.

2D layered metal halide perovskites (MHPs) are a potential material for fabricating self-powered photodetectors (PDs). Nevertheless, 2D MHPs produced via solution techniques frequently exhibit multiple quantum wells, leading to notable degradation in the device performance. Besides, the wide band gap in 2D perovskites limits their potential for broad-band photodetection. Integrating narrow-band gap materials with perovskite matrices is a viable strategy for broad-band PDs. In this study, the use of methylamine acetate (MAAc) as an additive in 2D perovskite precursors can effectively control the width of the quantum wells (QWs). The amount of MAAc greatly affects the phase purity. Subsequently, PbSe QDs were embedded into the 2D perovskite matrix with a broadened absorption spectrum and no negative effects on ferroelectric properties. PM6:Y6 was combined with the hybrid ferroelectric perovskite films to create a self-powered and broad-band PD with enhanced performance due to a ferro-pyro-phototronic effect, reaching a peak responsivity of 2.4 A W-1 at 940 nm.

Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors.

Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device's performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer's quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.

Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions.

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These materials are promising candidates for next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures, including quantum dots, nanosheets, nanorods, nanowires, and nanocrystals. Through a thorough analysis of recent literature, the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation. In addition, it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems. This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability, making it a valuable resource for researchers.

Balancing Carrier Dynamics in Oxygen-Vacancy-Tuned Amorphous Ga2O3 Thin-Film Self-Powered Photoelectrochemical-Type Solar-Blind Photodetector Arrays for Underwater Imaging.

Underwater imaging technology plays a pivotal role in marine exploration and reconnaissance, necessitating photodetectors (PDs) with high responsivity, fast response speed, and low preparation costs. This study presents the synergistic optimization of responsivity and response speed in self-powered photoelectrochemical (PEC)-type photodetector arrays based on oxygen-vacancy-tuned amorphous gallium oxide (a-Ga2O3) thin films, specifically designed for solar-blind underwater detection. Utilizing a low-cost one-step sputtering process with controlled oxygen flow, a-Ga2O3 thin films with varying oxygen vacancy (VO) concentrations are fabricated. By balancing the trade-offs among electrocatalytic reactions, charge transfer, carrier recombination, and trapping, both the responsivity and response speed of a-Ga2O3-based self-powered PEC-PDs are simultaneously improved. Consequently, the optimized PEC-PDs demonstrated exceptional performance, achieving a responsivity of 33.75 mA W-1 and response times of 12.8 ms (rise) and 31.3 ms (decay), outperforming the vast majority of similar devices. Furthermore, a pronounced positive correlation between anomalous transient photocurrent spikes and the concentration of VO defects is observed, offering compelling evidence for VO-mediated indirect recombination. Finally, the proof-of-concept solar-blind underwater imaging system, utilizing an array of self-powered PEC-PDs, demonstrated clear imaging capabilities in seawater. This work provides valuable insight into the potential for developing cost-effective, high-performance a-Ga2O3 thin-film-based PEC-PDs for advanced underwater imaging technology.

Highly Sensitive Perovskite Photoplethysmography Sensor for Blood Glucose Sensing Using Machine Learning Techniques.

Accurate non-invasive monitoring of blood glucose (BG) is a challenging issue in the therapy of diabetes. Here near-infrared (NIR) photoplethysmography (PPG) sensor based on a vapor-deposited mixed tin-lead hybrid perovskite photodetector is developed. The device shows a high detectivity of 5.32 × 1012 Jones and a large linear dynamic range (LDR) of 204 dB under NIR light, guaranteeing accurate extraction of eleven features from the PPG signal. By a combination of machine learning, accurate prediction of blood glucose level with mean absolute relative difference (MARD) as small as 2.48% is realized. The self-powered PPG sensor also works for real-time outdoor healthcare monitors using sunlight as a light source. The potential for early diabetes diagnoses by the perovskite PPG sensor is demonstrated.

High-Sensitivity and Fast-Response Photomultiplication Type Photodetectors Based on Quasi-2D Perovskite Films for Weak-Light Detection.

Photovoltaic photodiodes often face challenges in effectively harvesting electrical signals, especially when detecting faint light. In contrast, photomultiplication type photodetectors (PM-PDs) are renowned for their exceptional sensitivity to weak signals. Here, an advanced PM-PD is introduced based on quasi 2D Ruddlesden-Popper (Q-2D RP) perovskites, optimized for weak light detection at minimal operating voltages. The abundant traps at the Q-2D RP surface capture charge carriers, inducing a trap-assisted tunneling mechanism that leads to the photomultiplication (PM) effect. Deep-lying trap states within the Q-2D RP bulk accelerate charge carrier recombination, resulting in an outstanding rise/fall time of 1.14/1.72 µs for the PM-PDs. The PM-PD achieves a remarkable response level of up to 45.89 A W-1 and an extraordinary external quantum efficiency of 14400% at -1 V under an illumination of 1 µW cm- 2. The intrinsic high resistance of the Q-2D perovskite results in a low dark current, enabling an impressive detectivity of 4.23 × 1012 Jones based on noise current at -1 V. Furthermore, the practical application of PM-PDs has been demonstrated in weak-light, high-rate communication systems. These findings confirm the significant potential of PM-PDs based on Q-2D perovskites for weak light detection and suggest new directions for developing low-power, high-performance PM-PDs for future applications.

Performance of Low-Dimensional Solid Room-Temperature Photodetectors-Critical View.

In the last twenty years, nanofabrication progress has allowed for the emergence of a new photodetector family, generally called low-dimensional solids (LDSs), among which the most important are two-dimensional (2D) materials, perovskites, and nanowires/quantum dots. They operate in a wide wavelength range from ultraviolet to far-infrared. Current research indicates remarkable advances in increasing the performance of this new generation of photodetectors. The published performance at room temperature is even better than reported for typical photodetectors. Several articles demonstrate detectivity outperforming physical boundaries driven by background radiation and signal fluctuations. This study attempts to explain these peculiarities. In order to achieve this goal, we first clarify the fundamental differences in the photoelectric effects of the new generation of photodetectors compared to the standard designs dominating the commercial market. Photodetectors made of 2D transition metal dichalcogenides (TMDs), quantum dots, topological insulators, and perovskites are mainly considered. Their performance is compared with the fundamental limits estimated by the signal fluctuation limit (in the ultraviolet region) and the background radiation limit (in the infrared region). In the latter case, Law 19 dedicated to HgCdTe photodiodes is used as a standard reference benchmark. The causes for the performance overestimate of the different types of LDS detectors are also explained. Finally, an attempt is made to determine their place in the global market in the long term.

Perovskite versus Standard Photodetectors.

Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (R), detectivity (D*) and response time (τ), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated R and D*, which may be due to two reasons: immature device technology and erroneous D* estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost D* for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a D* close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future.

Wavelength Modulation and Fast Response of Mixed-Phase ß-Ga2O3:Zn/SnO2 in-Plane Heterojunction Ultraviolet Photodetectors.

Ultraviolet photodetectors based on wide bandgap mixed-phase ß-Ga2O3:Zn/SnO2 thin films formed through doping on the c-sapphire substrate (c-Al2O3) are prepared to construct in-plane heterojunctions employing a low-cost and simple preparation method. The mixed-phase thin film photodetectors have a low dark current of 0.74 nA, and the photo-to-dark current ratio ranges from 36.43 to 642.38 at 10 V. The photodetectors also have wavelength modulation, with response peaks ranging from 260 nm (4 mA/W) to 295 nm (1.63 A/W). Furthermore, the photodetectors have a fast response time with a rise time of 0.07 s/0.22 s and a decay time of 0.04 s/0.22 s at 1 V. The excellent performance of the devices is attributed to the reduction of VO and the establishment of multiple electric fields in the mixed-phase films, which indicates the feasibility of implementing wavelength-modulated and fast-response ß-Ga2O3 photodetectors using the sol-gel method.

Nanosecond laser annealing processed surface-structured hyperdoped silicon for efficient near-infrared detection.

Surface-structured engineering of hyperdoped silicon can effectively facilitate the absorption of sub-bandgap photons in pristine single-crystal silicon (sc-Si). Here, we conducted different annealing approaches of ordinary thermal annealing (OTA) and nanosecond laser annealing (NLA) on modification of titanium-hyperdoped silicon (Si:Ti) surface structure, to achieve efficient near-infrared detection. It is presented that both OTA and NLA processes can improve the crystallinity of Si:Ti samples. In detail, atomic-resolved STEM characterization illustrates that NLA treatment will further eliminate the amorphous phase on Si:Ti surface to varying degrees. While one-dimensional periodic stacking fault structure of 9R-Si phase is formed at the surface of sc-Si and embedded in the Si matrix during the OTA process, which reveals the seamless interface of 9R-Si/sc-Si along with [11¯0] direction. Due to the high sub-bandgap light absorption and good crystal structure, the Si:Ti photodetector after NLA treatment with an energy density of 2.6 J cm-2exhibited the highest responsivity, reaching 151 mA W-1at 1550 nm even at a low operating voltage of 1 V. We assume the performance enhancement of NLA processed Si:Ti photodetectors can be attributed to two aspects, the one is NLA can reduce the recombination of photo-generated charge carriers in amorphous surface layer by improving crystallization, and the other is that NLA process can weaken the diffusion of titanium impurities due to the extremely rapid heating and cooling rates. This study presents prospects towards surface-structured silicon in infrared light detection.

High-Performance Photodetectors Based on Suspended Ultralong Carbon Nanotubes.

Photodetectors are in huge demand in multiple fields, such as remote sensing, chemical detection, security, and medical imaging. Carbon nanotubes (CNTs) are promising candidates for high-performance photodetectors due to their extraordinary optical and electrical properties. However, the performance of previously reported CNT-based photodetectors is far from the intrinsic photoelectrical properties of CNTs because of the noncontinuous lengths, structural defects, and unsatisfactory structural design of the previously used short CNTs. The key to improving the performance of CNT-based photodetectors is to increase the length and structural quality of the CNTs. Herein, high-performance photodetectors were fabricated by using high-density suspended ultralong CNTs (SUCNTs). The suspended structures of ultralong CNTs not only reduced the electron-phonon interactions generated by substrates but also largely avoided bolometric effects through efficient heat dissipation. Moreover, the characteristics of high areal density and defect-free structures of SUCNTs could increase the effective absorption areas and improve their carrier mobility, resulting in enhanced photoconductive responses. Consequently, compared with the nonsuspended short CNTs, the SUCNT-based photodetectors achieved significantly improved photodetection performance, such as high responsivity (0.181 A W-1), detectivity (1.20 × 109 cm Hz1/2 W-1), ultrafast response (0.13 ms), and broad detection range (405-850 nm).

Individually Tunable Energy Levels of Oligomers Based on N-B←N Units.

Opto-electronic properties and device performance of organic semiconductors are mainly determined by energy levels of their frontier molecular orbitals, e.g. lowest unoccupied molecular orbital (ELUMO) and highest occupied molecular orbital (EHOMO) in the ground state, first singlet state (ES1) and first triplet state (ET1) in the excited state. These energy levels are always intricately intertwined. Herein, we report a series of monodisperse oligomers based on double B←N bridged bipyridine (BNBP) units. With the increasing number of repeating units, the oligomers exhibit gradually downshifted ELUMO and nearly unchanged EHOMO due to the different distribution of the frontier molecular orbitals of the oligomers. Moreover, the oligomers exhibit gradually decreasing ES1 and nearly unchanged ET1 because of the different contributions of the charge transfer component in the excited state. This work provides new insight into energy level tuning of organic semiconductors, which is important for high-performance organic opto-electronic devices.

Van Hove Singularity-Enhanced Raman Scattering and Photocurrent Generation in Twisted Monolayer-Bilayer Graphene.

Twisted monolayer-bilayer graphene (TMBG) has recently emerged as an exciting platform for exploring correlated physics and topological states with rich tunability. Strong light-matter interaction was realized in twisted bilayer graphene, boosting the development of broadband graphene photodetectors from the visible to infrared spectrum with high responsivity. Extending this approach to the case of TMBG will help design advanced quantum nano-optoelectronic devices because of the reduced symmetry of the system. Here, we observe the formation of van Hove singularities (VHSs) in TMBG by monitoring the significant enhancement of the Raman intensity of the G peak and the intensity ratio of G and 2D peaks. The strong interlayer coupling also leads to the appearance of twist-angle-dependent Raman R and R' peaks in TMBG. Furthermore, the constructed graphene photodetectors from 13.5°-TMBG show significantly enhanced photoresponsivity (∼31 folds of monolayer graphene and ∼15 folds of trilayer graphene) when the energy of incident photons matches the interval energy between the two VHSs in the conduction and valence bands. Our findings establish TMBG as a tunable platform for investigating the light-matter interaction and designing high-performance graphene photodetectors with combined high responsivity and high selectivity.

Self-Anchored Van-Der-Waals Stacking Growth of Transition-Metal Dichalcogenide Nanoplates.

Transition-metal dichalcogenide (TMDs) nanoplates exhibit unique properties different from their monolayer counterparts. Controllable nucleation and growth are prerequisite and highly desirable for their practical applications. Here, a self-anchored van-der-Waals stacking growth method is developed, by which the substrate pit induced by precursor etching anchors the source material, impedes the lateral spreading of source droplets and facilitates the in situ stacking growth of high-quality TMD nanoplates with a thickness of tens to hundreds of nanometers at well-defined locations. As such, an array of TMD nanoplates with controlled lateral dimensions are produced and applied in arrayed photodetectors. This study solves the problem of controllable preparation of TMD nanoplates, holding promise for applications in electronics and optoelectronics.

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection.

Although enhanced performances of photovoltaic devices by embedding metal nanoparticals in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performances were investigated. The results showed that compared with reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception for light with wavelengths fall in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light.

Rolling up 2D WSe2 Nanosheets to 1D Anisotropic Nanoscrolls for Polarization-Sensitive Photodetectors.

The intrinsic low-symmetry crystal structures or external geometries of low-dimensional materials are crucial for polarization-sensitive photodetection. However, these inherently anisotropic materials are limited in variety, and their anisotropy is confined to specific crystal directions. Transforming 2D semiconductors, such as WSe2, from isotropic 2D nanosheets into anisotropic 1D nanoscrolls expands their application in polarization photodetection. Despite this considerable potential, research on polarization photodetection based on nanoscrolls remains scarce. Here, the uniform crystalline orientation of WSe2 nanoscrolls is achieved conveniently and efficiently by applying ethanol droplets to vapor deposition-grown bilayer WSe2 nanosheets. Angle-resolved polarized Raman spectroscopy of WSe2 nanoscrolls demonstrates vibrational anisotropy. Photodetectors based on these nanoscrolls show competitive overall performance with a broadband detection range from 405 to 808 nm, a competitive on/off ratio of ≈900, a high detectivity of 3.4 × 108 Jones, and a fast response speed of ≈30 ms. Additionally, WSe2 nanoscroll-based photodetectors exhibit strong polarization-sensitive detection with a maximum dichroic ratio of 1.5. More interestingly, due to high photosensitivity, the WSe2 nanoscroll detectors can easily record sequential puppy images. This work reveals the potential of WSe2 nanoscrolls as excellent polarization-sensitive photodetectors and provides new insights into the development of high-performance optoelectronic devices.

Recent Advances in Antimony Selenide Photodetectors.

Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth-abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive-type and photodiode-type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic-integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.