ABSTRACT
Nanostructured hydrogenated carbon nitride (CNx:H) thin films were synthesized on a crystal silicon substrate at low deposition temperature by radio-frequency plasma-enhanced chemical vapor deposition (PECVD). Methane and nitrogen were the precursor gases used in this deposition process. The effects of N2 to the total gas flow rate ratio on the formation of CNx:H nanostructures were investigated. Field-emission scanning electron microscopy (FESEM), Auger electron spectroscopy (AES), Raman scattering, and Fourier transform of infrared spectroscopies (FTIR) were used to characterize the films. The atomic nitrogen to carbon ratio and sp² bonds in the film structure showed a strong influence on its growth rate, and its overall structure is strongly influenced by even small changes in the N2:(N2 + CH4) ratio. The formation of fibrous CNx:H nanorod structures occurs at ratios of 0.7 and 0.75, which also shows improved surface hydrophobic characteristic. Analysis showed that significant presence of isonitrile bonds in a more ordered film structure were important criteria contributing to the formation of vertically-aligned nanorods. The hydrophobicity of the CNx:H surface improved with the enhancement in the vertical alignment and uniformity in the distribution of the fibrous nanorod structures.
ABSTRACT
Studying the effect of a magnetic field on oligonucleotide DNA can provide a novel DNA manipulation technique for potential application in bioengineering and medicine. In this work, the optical and electrochemical response of a 100 bases oligonucleotides DNA, cytosine-guanine (CG100), is investigated via exposure to different magnetic fields (250, 500, 750, and 1000 mT). As a result of the optical response of CG100 to the magnetic field, the ultra-violet-visible spectrum indicated a slight variation in the band gap of CG100 of about 0.3 eV. Raman spectroscopy showed a significant deviation in hydrogen and phosphate bonds' vibration after exposure to the magnetic field. Oligonucleotide DNA mobility was investigated in the external electric field using the gel electrophoresis technique, which revealed a small decrease in the migration of CG100 after exposure to the magnetic field.
Subject(s)
DNA/isolation & purification , Electrophoresis/methods , Magnetics , Spectrophotometry, Ultraviolet/methods , Spectrum Analysis, Raman/methodsABSTRACT
In this work, the piezoresistive effects of defective graphene used on a flexible pressure sensor are demonstrated. The graphene used was deposited at substrate temperatures of 750, 850 and 1000 °C using the hot-filament thermal chemical vapor deposition method in which the resultant graphene had different defect densities. Incorporation of the graphene as the sensing materials in sensor device showed that a linear variation in the resistance change with the applied gas pressure was obtained in the range of 0 to 50 kPa. The deposition temperature of the graphene deposited on copper foil using this technique was shown to be capable of tuning the sensitivity of the flexible graphene-based pressure sensor. We found that the sensor performance is strongly dominated by the defect density in the graphene, where graphene with the highest defect density deposited at 750 °C exhibited an almost four-fold sensitivity as compared to that deposited at 1000 °C. This effect is believed to have been contributed by the scattering of charge carriers in the graphene networks through various forms such as from the defects in the graphene lattice itself, tunneling between graphene islands, and tunneling between defect-like structures.
ABSTRACT
Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.