ABSTRACT
Operational stability, such as long-term ambient durability and bias stress stability, is one of the most significant parameters in organic thin-film transistors (OTFTs). The understanding of such stabilities has been mainly devoted to energy levels of frontier orbitals, thin-film morphologies, and device configuration involving gate dielectrics and electrodes, whereas the roles of molecular and aggregated structural features in device stability are seldom discussed. In this Letter, we report a remarkable enhancement of operational stability, especially bias stress, of n-channel single-crystal OTFTs derived from a replacement of phenyl with perfluorophenyl groups in the side chain. Because of the several-molecule-thick single-crystal nature employed for the OTFTs, the crystal-surface properties are thought to be critical, where the surface structure composed of perfluorophenyl moieties could suppress interactions between environmental species and field-induced carriers owing to increased hydrophobicity and steric protection of π-conjugated units.
ABSTRACT
Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.
