ABSTRACT
Electron beam-induced current (EBIC) can be used to detect electronic irregularities in solar cells, such as shunts and precipitates, and to perform physical characterization of defects by, e.g. measuring the temperature dependence of their recombination activity. Recently also luminescence methods such as electroluminescence (EL) and photoluminescence (PL) have been shown to provide useful information on crystal defects in solar cells. In this contribution it will be shown that the combined application of EBIC, EL and PL may deliver useful information on the presence and on the physical properties of crystal defects in silicon solar cells. Also pre-breakdown sites in multicrystalline cells can be investigated by reverse-bias EL and by microplasma-type EBIC, in comparison with lock-in thermography investigations.
ABSTRACT
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
