Low-Temperature Cross-Linkable Hole Transport Materials for Solution-Processed Quantum Dot and Organic Light-Emitting Diodes with High Efficiency and Color Purity.

Cross-linkable hole transport materials (HTMs) are ideal for improving the performance of solution-processed quantum dot light-emitting diodes (QLEDs) and phosphorescent light-emitting diodes (OLEDs). However, previously developed cross-linkable HTMs possessed poor hole transport properties, high cross-linking temperatures, and long curing times. To achieve efficient cross-linkable HTMs with high mobility, low cross-linking temperature, and short curing time, we designed and synthesized a series of low-temperature cross-linkable HTMs comprising dibenzofuran (DBF) and 4-divinyltriphenylamine (TPA) segments for highly efficient solution-processed QLEDs and OLEDs. The introduction of divinyl-functionalized TPA in various positions of the DBF core remarkably affected their chemical, physical, and electrochemical properties. In particular, cross-linked 4-(dibenzo[b,d]furan-3-yl)-N,N-bis(4-vinylphenyl)aniline (3-CDTPA) exhibited a deep highest occupied molecular orbital energy level (5.50 eV), high hole mobility (2.44 × 10-4 cm2 V-1 s-1), low cross-linking temperature (150 °C), and short curing time (30 min). Furthermore, a green QLED with 3-CDTPA as the hole transport layer (HTL) exhibited a notable maximum external quantum efficiency (EQEmax) of 18.59% with a remarkable maximum current efficiency (CEmax) of 78.48 cd A-1. In addition, solution-processed green OLEDs with 3-CDTPA showed excellent device performance with an EQEmax of 15.61%, a CEmax of 52.51 cd A-1, and outstanding CIE(x, y) color coordinates of (0.29, 0.61). This is one of the highest reported EQEs and CEs with high color purity for green solution-processed QLEDs and OLEDs using a divinyl-functionalized cross-linked HTM as the HTL. We believe that this study provides a new strategy for designing and synthesizing practical cross-linakable HTMs with enhanced performance for highly efficient solution-processed QLEDs and OLEDs.

Simple, Fast, and Scalable Reverse-Offset Printing of Micropatterned Copper Nanowire Electrodes with Sub-10 µm Resolution.

Copper nanowires (CuNWs) possess key characteristics for realizing flexible transparent electronics. High-quality CuNW micropatterns with high resolution and uniform thickness are required to realize integrated transparent electronic devices. However, patterning high-aspect-ratio CuNWs is challenging because of their long length, exceeding the target pattern dimension. This work reports a novel reverse-offset printing technology that enables the sub-10 µm high-resolution micropatterning of CuNW transparent conducting electrodes (TCEs). The CuNW ink for reverse-offset printing was formulated to control viscoelasticity, cohesive force, and adhesion by adjusting the ligands, solvents, surface energy modifiers, and leveling additives. An inexpensive commercial adhesive handroller achieved a simple, fast, and scalable micropatterning of CuNW TCEs. Easy production of high-quality CuNW micropatterns with various curvatures and shapes was possible, regardless of the printing direction. The reverse-offset-printed CuNW micropatterns exhibited a minimum of 7 µm line width and excellent pattern qualities such as fine line spacing, sharp edge definition, and outstanding pattern uniformity. In addition, they exhibited excellent sheet resistance, high optical transparency, outstanding mechanical durability, and long-term stability. Flexible light-emitting diode (LED) circuits, transparent heaters, and organic LEDs (OLEDs) can be fabricated using high-resolution reverse-offset-printed CuNW micropatterns for applications in flexible transparent electronic devices.