Carbon Dots for Multiuse Platform: Intracellular pH Sensing and Complementary Intensified T1-T2 Dual Imaging Contrast Nanoprobes.

Measurement of pH in living cells is a great and decisive factor for providing an early and accurate diagnosis factor. Along with this, the multimodal transverse and longitudinal relaxivity enhancement potentiality over single modality within a single platform in the magnetic resonance imaging (MRI) field is a very challenging issue for diagnostic purposes in the biomedical field of application. Therefore, this work aims to design a versatile platform by fabricating a novel nanoprobe through holmium- and manganese-ion doping in carbon quantum dots (Ho-Mn-CQDs), which can show nearly neutral intracellular pH sensing and MRI imaging at the same time. These manufactured Ho-Mn-CQDs acted as excellent pH sensors in the near-neutral range (4.01-8.01) with the linearity between 6.01 and 8.01, which could be useful for the intracellular pH-sensing capability. An innumerable number of carboxyl and amino groups are present on the surface of the prepared nanoprobe, making it an excellent candidate for pH sensing through fluorescence intensity quenching phenomena. Cellular uptake and cell viability experiments were also executed to affirm the intracellular accepting ability of Ho-Mn-CQDs. Furthermore, with this pH-sensing quality, these Ho-Mn-CQDs are also capable of acting as T1-T2 dual modal imaging contrast agents in comparison with pristine Ho-doped and Mn-doped CQDs. The Ho-Mn-CQDs showed an increment of r1 and r2 relaxivity values simultaneously compared with only the negative contrast agent, holmium in holmium-doped CQDs, and the positive contrast agent, manganese in manganese-doped CQDs. The above-mentioned observations elucidate that its tiny size, excitation dependence of fluorescence behavior, low cytotoxicity, and dual modal contrast imaging capability make it an ideal candidate for pH monitoring in the near-neutral range and also as a dual modal MRI imaging contrast enhancement nanoprobe at the same time.

Assessment of fish adulteration using SnO2 nanopetal-based gas sensor and machine learning.

The work presents the identification of fish adulteration and quality assessment by incorporating a chemiresistive gas sensor and machine learning (ML) techniques. Highly sensitive SnO2 nanopetals were synthesized chemically and integrated with interdigitated electrodes to fabricate a sensor device. The sensor was calibrated with formaldehyde (37 %) with a theoretical detection limit of 75 ppb and further utilized to detect the vapors emitted from fresh and formalin-adulterated fish. An extensive sensing investigation was conducted with freshly caught Rohu fish samples. The sensing behavior was examined for all the samples at different time intervals to estimate the spoilage level. The classification between fresh and adulterated fish samples was obtained with 100 % accuracy by employing ML tools. Moreover, the storage duration and spoilage level of fish samples were quantified using regression models. This work emphasizes the potential of nanomaterials combined with machine learning for the accurate detection of adulteration in food systems.

A simple chemical reduction approach to dope ß-FeSi2 with boron and its comprehensive characterization.

ß-FeSi2 has been doped with Boron via a novel and cost-effective chemical reduction of the glassy phase of [(Fe2O3 + 4SiO2 + B2O3 + FeBO3 + Fe2SiO4)] using Mg metal at 800 °C. Doped ß-FeSi2 has been investigated via extensive characterization and detailed analysis using first-principles calculations. The reduction in the d-spacing as can be observed from the XRD peak shift as well as the blue shift of the ß-Raman line along with the right shift of Si and Fe 2p peaks indicate the B doping. The Hall investigation basically demonstrates p-type conductivity. Hall parameters were also analyzed using thermal mobility and dual-band model. The temperature profile of RH demonstrates the contribution of shallow acceptor levels at low temperatures, whereas the deep acceptor level contributes at high temperatures. Dual-band investigation reveals a substantial increase in the Hall concentration with B doping due to the cumulative contribution of both deep and shallow acceptor levels. The low-temperature mobility profile exhibits phonon and ionized impurity scattering just above and below 75 K, respectively. Moreover, it demonstrates that holes in low-doped samples can be transported more easily than at higher B doping. From density functional theory (DFT) calculations, the origin of the dual-band model has been validated from the electronic structure of ß-FeSi2. Further, the effects of Si and Fe vacancies and B doping on the electronic structure of ß-FeSi2 have also been demonstrated. The charge transfer to the system due to B doping has indicated that an increase in doping leads to higher p-type characteristics.

Nitrogen and sulphur doped carbon dot: An excellent biocompatible candidate for in-vitro cancer cell imaging and beyond.

Carbon dots (CDs) are an exquisite class of carbon allotrope that is already well nourished for their good biocompatibility, water-solubility, excellent photostability, and magnificent photoluminescence property. Doping strategy with heteroatoms is an efficacious way to modify the physicochemical and optical properties, making the carbon dots an exceedingly potential candidate. This work reports the fabrication and cancer cell imaging application of photoluminescent heteroatom-doped carbon dots by use of cysteine and urea as carbon, nitrogen, and sulphur sources through a straightforward and highly productive hydrothermal procedure. The fabricated luminescent carbon dots are spherical in shape, with an average diameter of 3.5 nm. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR) characterization revealed key facts about the surface functional groups and chemical compositions of carbon dots. The excitation-dependent photoluminescence (PL) peak appeared at around 445 nm against the excited wavelength of 350 nm. Moreover, under the provided experimental conditions, all the carbon dots are non-toxic and safe. The cytotoxicity and the safety profiles of the carbon dots were found to be in the bearable range under normal in-vitro experimental circumstances. Cellular uptake was observed by the green fluorescence of carbon dots inside cells. Likewise, the carbon dots did not alter the cell viability of the normal glial cell line. Again, when treated with the carbon dots, there was no notable increase of apoptotic cells in the G2/M phase of cell cycle analysis that confirmed the imaging-trackable ability of the carbon dots.

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory.

In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 108 V/m. The current transport mechanism was explained from the output characteristics using the Fowler-Nordheim tunneling theory. Capacitance-voltage (C-V) measurements have been employed to determine the value of the oxide capacitance and to examine the memory effect. The hysteresis behavior observed from the C-V characteristics show the suitability of the device for memory applications with a low operating voltage of 3 V. The charge trapping behavior of GO was explained by the energy band diagram. Frequency-dependent C-V measurements in the range 100 kHz to 1 MHz were also performed to account for the memory window obtained in the devices. The charge retention and endurance characteristics were evaluated under a constant voltage stress to check the reliability of device operation.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport.

The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductivity in the composite. Six sets of field effect transistors with pristine GO and GO-ZnO as the channel layer at varying ZnO concentrations were fabricated. From the transfer characteristics, it is observed that GO exhibited an insulating behavior and the transistors with low ZnO (5 wt %) concentration initially showed p-type conductivity that changes to n-type with increases in ZnO loading. This n-type dominance in conductivity is a consequence of the transfer of electrons from ZnO to the GO matrix. From X-ray photoelectron spectroscopic measurements, it is observed that the progressive reduction in the C-OH oxygen group took place with increases in ZnO loading. Thus, from insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO. The restoration of sp(2) electron network in the GO matrix with the anchoring of ZnO nanostructures was observed from Raman spectra. From UV-visible spectra, the band gap in pristine GO was found to be 3.98 eV and reduced to 2.8 eV with increase in ZnO attachment.

Impurity-band induced transport phenomenon and thermoelectric properties in Yb doped PbTe(1-x)I(x).

In the present investigation, we report the effect of ytterbium (Yb) impurity band on charge transport and thermoelectric properties in PbTe1-xIx. The temperature dependent interaction of Yb-states with charge carriers and host energy-bands is found to significantly affect the electrical transport parameters in all the investigated samples. Our result indicates that, in the presence of Yb band, the carrier concentration did not increase as effectively as it was found in pristine PbTe with increasing iodine content. An anomalous switching of positive thermopower into negative was found in the samples with lower iodine content. Such phenomena were explained by the redistribution of charge carriers within the different available bands and promotion of vacancy like defects via substitutional impurity. Due to the optimum doping levels, the sample with the highest iodine content showed a decent figure of merit with a peak value of 0.69 at 575 K in the sample with x = 0.007.