Integrated polarization mode interferometer in 220-nm silicon-on-insulator technology.

A compact integrated and high-efficiency polarization mode interferometer in the 220-nm silicon-on-insulator platform is presented. Due to the operation with two polarization modes in a single waveguide, low propagation losses and high sensitivities combined with a small footprint are achieved. The designed and fabricated system with a 5-mm-long sensing region shows a measured excess loss of only 1.5 dB with an extinction ratio up to 30 dB, while its simulated homogeneous bulk sensitivity can exceed 8000 rad/RIU. The combination with a 90° hybrid readout system offers single wavelength operation with unambiguousness for phase shifts up to 2π and constant sensitivity.

Push-pull thiophene chromophores for electro-optic applications: from 1D linear to ß-branched structures.

We report the synthesis and characterization of a novel series of push-pull chromophores bearing 1D linear and ß-branched thiophenes as π-conjugated spacers between a 2,2,4,7-tetramethyl-1,2,3,4-tetrahydroquinoline electron donor unit and dicyano- and tricyanovinylene electron acceptor groups. The effect of the introduction of ß-thiophenes on the linear and nonlinear (NLO) optical properties as well as electrochemical and thermal data is studied in detail by performing a comparative study between the branched and 1D linear systems. In addition, a parallel DFT computational study is used to evaluate structure-property relationships. The non-linear optical behavior of the molecules both in solution and in solid state as electro-optic (EO) films using a guest-host approach shows very promising performance for electro-optic applications with high molecular first hyperpolarizabilities (µß) of 4840 × 10-48 esu and electro-optic coefficients r33 reaching 650 pm V-1. One highlight is that the electro-optic films of the ß-branched chromophores are superior in terms of thermal stability in device operation as measured by a transmissive modified reflective Teng-Man method. This work provides guidelines for the design of improved electro-optic materials including ß-branched chromophores which could be useful for practical EO applications, where both enhanced ß and r33 values together with chemical and thermal stability are necessary.

Silicon Integrated Dual-Mode Interferometer with Differential Outputs.

The dual-mode interferometer (DMI) is an attractive alternative to Mach-Zehnder interferometers for sensor purposes, achieving sensitivities to refractive index changes close to state-of-the-art. Modern designs on silicon-on-insulator (SOI) platforms offer thermally stable and compact devices with insertion losses of less than 1 dB and high extinction ratios. Compact arrays of multiple DMIs in parallel are easy to fabricate due to the simple structure of the DMI. In this work, the principle of operation of an integrated DMI with differential outputs is presented which allows the unambiguous phase shift detection with a single wavelength measurement, rather than using a wavelength sweep and evaluating the optical output power spectrum. Fluctuating optical input power or varying attenuation due to different analyte concentrations can be compensated by observing the sum of the optical powers at the differential outputs. DMIs with two differential single-mode outputs are fabricated in a 250 nm SOI platform, and corresponding measurements are shown to explain the principle of operation in detail. A comparison of DMIs with the conventional Mach-Zehnder interferometer using the same technology concludes this work.

Bridging the gap between optical fibers and silicon photonic integrated circuits.

We present a rigorous approach for designing a highly efficient coupling between single mode optical fibers and silicon nanophotonic waveguides based on diffractive gratings. The structures are fabricated on standard SOI wafers in a cost-effective CMOS process flow. The measured coupling efficiency reaches -1.08 dB and a record value of -0.62 dB in the 1550 nm telecommunication window using a uniform and a nonuniform grating, respectively, with a 1 dB-bandwidth larger than 40 nm.

Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69% coupling efficiency.

A highly efficient grating structure for the coupling between standard optical fibers and single-mode waveguides in the silicon-on-insulator platform realized in a CMOS fabrication process is presented. The cost-effective method introduces a backside metal mirror to the grating coupler without need of an extensive wafer-to-wafer bonding. A coupling efficiency of -1.6 dB (around 69%) near the telecommunication wavelength 1550 nm and a large 1 dB-bandwidth of 48 nm are achieved.