Propagation of surface plasma waves in metal films perforated with n × n lattices of holes (n = 2 to 72).

The propagation of surface plasma waves (SPWs) in 90 nm-thick Au films perforated with n × n square lattices of circular holes, referred to as n-metal photonic crystals (n-MPCs), is investigated. The hole period was set to 3 µm with n = 2, 4, 6, 8, 12, 18, 24, 36, and 72. For each n-MPC, the total number of holes was conserved to 5184 (= 72 × 72), which were grouped to form an Mn × Mn (Mn = 72/n) array of lattices, evenly spaced on 384 × 384 µm2. The n-MPCs were individually integrated on semi-insulating GaAs substrates. In the transmission through them, the primary peak by the SPW excited at the n-MPC/GaAs interface exhibits clear variation with n in its wavelength and intensity. It begins to appear for n ∼ 4 and its intensity is increased with n but saturated for n∼ x> 36 with Fano lineshape. These imply the SPW excitation is significantly affected by the boundary and number of holes in each lattice. Such lattice size-dependent transmission is compared with the absorption of the quantum dot infrared photodetectors identically coupled to the n-MPCs. In the absorption, the saturation of the peak intensity is observed for n∼ x> 24, lower than the ∼36 in the transmission. Their difference is characterized with the SPW propagation and decay that critically depend on the dielectric properties of devices as well as the number of holes and boundaries of each lattice in plasmonic excitation.

Visible (400- to 700-nm) chirped-grating-coupled waveguide spectrometer.

An integrable on-chip spectrometer, based on a transversely-chirped-grating waveguide-coupler for the 400- to 700-nm visible spectral range is demonstrated. For a fixed angle of incidence, the coupling wavelength is dependent on the local grating period and the waveguide structure. The transversely-chirped-input grating is fabricated on a SiO2-Si3N4-SiO2 waveguide atop a Si substrate by interferometric lithography in two sections on a single silicon substrate. A uniform period grating, separated from the input coupler by a propagation region, is provided for out-coupling to a 2048 element CMOS detector array. The incident light with wavelength spanning 400- to 700-nm is coupled into waveguide at 33.5° through the chirped grating coupler. A resolution of ∼ 1.2 nm is demonstrated without any signal processing reconstruction.

Analysis of Fano lineshape in extraordinary optical transmission.

We analyze the lineshape of the extraordinary optical transmission (EOT) associated with surface plasma waves (SPWs) excited with a metal photonic crystal (MPC), an Au film perforated with a 2.6 µm period, two-dimensional array of holes, integrated atop a GaAs substrate. From its asymmetry by Fano interference between transmission mediated by SPWs and direct transmission through individual holes, the resonance energy of the fundamental SPW propagating along the MPC/GaAs interface is extracted as 138.8 meV. This energy, the reference of the analysis, is slightly higher than the energy of the apparent peak of the EOT but lower than that of the Rayleigh anomaly closely related to the direct transmission. Its accuracy is verified with an identical MPC integrated on a quantum dot infrared photodetector coupled to the same SPW. Additional lineshape parameters, including relative strength of the two pathways to the transmission and SPW broadening, are determined from experiments. A condition of the Fano interference for EOT, critical to the intensity of its peak transmission, is established with their relations.

Image quality improvement for optical imaging interferometric microscopy.

Imaging interferometric microscopy (IIM) is an optical microscopy resolution enhancement technique involving combining multiple sub-images to increase resolution. Several image reconstruction challenges can degrade the image quality including the frequency, phase deviations between sub-images, and maintenance of a uniform frequency response across the entire space. This work proposes methods to address these issues. The methods are first compared in simulation using a Manhattan structure of 260-nm critical dimension with 2-µm-pitch calibration grating on the sides. The proposed correction methods are then applied to the experimental results and found to be effective in improving the image quality of IIM.

Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics.

A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photonics is reported. The detector is designed to provide a broadband absorption [full width at half maximum (FWHM) ≳ 2 µm] peaked at ∼5.5 µm, corresponding to transitions from the ground state of the quantum dot to the quasi-continuum resonance state above the quantum well. From the coupling of this transition to the surface plasma wave (SPW) excited by an Au film atop the detector, fabricated with a 1.5 µm-period, 2-dimensional array of square holes, a narrowband SPW enhancement peaked at 4.8 µm with an FWHM less than 0.5 µm is achieved. At ∼90 K, a peak responsivity enhanced ∼5× by the plasmonic coupling is observed. Simulation reveals that this enhancement corresponds to collecting ∼6% of the incident light; ∼40% of the total absorption by the SPW excitation at the peak wavelength.

Chirped-grating spectrometer-on-a-chip.

We demonstrate an on-chip spectrometer readily integrable with CMOS electronics. The structure is comprised of a SiO2/Si3N4/SiO2 waveguide atop a silicon substrate. A transversely chirped grating is fabricated, in a single-step optical lithography process, on a portion of the waveguide to provide angle and wavelength dependent coupling to the guided mode. The spectral and angular information is encoded in the spatial dependence of the grating period. A uniform pitch grating area, separated from the collection area by an unpatterned propagation region, provides the out-coupling to a CMOS detector array. A resolution of 0.3 nm at 633 nm with a spectral coverage tunable across the visible and NIR (to ∼ 1 µm limited by the Si photodetector) by changing the angle of incidence, is demonstrated without the need for any signal processing deconvolution. This on-chip spectrometer concept will cost effectively enable a broad range of applications that are beyond the reach of current integrated spectroscopic technologies.

Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement.

We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In0.15Ga0.85As/GaAs dots-in-a-well (Dwell) quantum dot infrared photodetector (QDIP) having a single-color response at ∼10 µm. A gold film perforated with a square array of complex, non-circular apertures is employed to manipulate the near-fields of the fundamental SPW. The quantum efficiency is quantitatively divided into absorption efficiency strongly enhanced by the SPW, and collection efficiency mostly independent of it. In the absorption efficiency, the evanescent near-fields of the fundamental SPW critically enhances QDIP performance but undergoes the attenuation by the absorption in the Dwell that ultimately limits the quantum efficiency. For the highest quantum efficiency available with plasmonic coupling, an optimal overlap between Dwell and SPW near-fields is required. Based on experiment and simulation, the upper limit of the plasmonic enhancement in quantum efficiency for the present device is addressed.

Measuring Liquid Drop Properties on Nanoscale 1D Patterned Photoresist Structures.

This communication reports liquid wetting properties of DI-water on one-dimensional nano-patterned photoresist lines atop a silicon substrate as the pattern period is varied from 0.3- to 1.0-µm. Both constant photoresist height and constant width/height ratios are investigated. The line/period ratio was fixed at 0.3 (0.4) for different measurement sequences. The surface of the photoresist was treated with a short CHF3 reactive ion etch to ensure consistent hydrophobic photoresist: water surface energies. Average parallel contact angle (θ||), average perpendicular contact angle (θ⊥), drop width (W), and drop length (L) at constant volume were measured on nano-patterned surfaces fabricated with interferometric lithography. Both θ|| and θ⊥ contact angles increase as the period (0.3- to 1-µm) increases; the θ|| spreading rate is faster than θ⊥ due to pinning on the grooves resulting in an elongated drop shape. The traditional Wenzel and Cassie-Baxter models of drop contact angles were developed for isotropic random 2D roughness and do not account for the anisotropy induced by the 1D line patterns. The observed angular variations with period are not consistent with either model. Understanding liquid wetting properties and hydrophobicity on 1D silicon surfaces has many applications in lab-on-a-chip, micro/nano-fluidic devices, roll-to-roll nano-imprint fabrication, self-cleaning surfaces, and micro-reactors.

Smart Lighting Clinical Testbed Pilot Study on Circadian Phase Advancement.

OBJECTIVE: Lighting is a strong synchronizer for circadian rhythms, which in turn drives a wide range of biological functions. The objective of our work is a) to construct a clinical in-patient testbed with smartI lighting, and b) evaluate its feasibility for use in future clinical studies. METHODS: A feedback capable, variable spectrum lighting system was installed at the University of New Mexico Hospital. The system consists of variable spectrum lighting troffers, color sensors, occupancy sensors, and computing and communication infrastructure. We conducted a pilot study to demonstrate proof of principle, that 1) this new technology is capable of providing continuous lighting and sensing in an active clinical environment, 2) subject recruitment and retention is feasible for round-the-clock, multi-day studies, and 3) current techniques for circadian regulation can be deployed in this unique testbed. Unlike light box studies, only troffer-based lighting was used, and both lighting intensity and spectral content were varied. RESULTS: The hardware and software functioned seamlessly to gather biometric data and provide the desired lighting. Salivary samples that measure dim-light melatonin onset showed phase advancement for all three subjects. CONCLUSION: We executed a five-day circadian rhythm study that varied intensity, spectrum, and timing of lighting as proof-of-concept or future clinical studies with troffer-based, variable spectrum lighting. Clinical Impact: The ability to perform circadian rhythm experiments in more realistic environments that do not overly constrain the subject is important for translating lighting research into practice, as well as for further research on the health impacts of lighting.

Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy.

The initial stages of the nucleation of cubic (c-) GaN in heterophase epitaxy on a Si v-groove are investigated. Growth of GaN on a nanoscale {111}-faceted v-groove fabricated into a Si(001) substrate proceeds in the hexagonal (h-) phase that induces a secondary v-groove replicating the substrate topography with two opposing {0001} facets. The secondary v-groove is then orientationally mismatched at the junction of the h-GaN facets (h -h junction) resulting in structural instability. This instability is relieved either by the formation of voids that reduce the actual junction area or by the transition to c-phase (h-c transition) suppressing further extension of the h-h junction. The distribution of voids that is locally affected by the island growth mode of h-GaN on Si(111) and the imperfection in the groove geometry impacts the initial stage of heterophase epitaxy. Primarily, The h-c transition is observed as a non-local phenomenon; it occurs homogeneously and simultaneously along the bottom of the entire secondary groove and forms a one-dimensional (1D) seed layer except for some interruptions where the h-h junction is defected by gaps or incomplete voids. Between these interruptions, epitaxy retains a single crystal but results in a series of c-GaN nanodots on the seed layer with large fluctuation in size and spacing. The adatom incorporation observed in this heterophase epitaxy is a 1D analog to the wetting of a substrate followed by the self-assembly in conventional quantum dot epitaxy. The surface morphology of the c-GaN nanodots is governed by the faceting mostly composed of (001)- and (11n)-orientations and the roughening between these facets that ultimately affect the morphology of the final top surface of the c-III-N. The interruptions interfere with the homogeneity of the h-c transition and can cause antiphase defects and mosaicity. Based on experimental results, a solution to improve these issues is proposed.

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1-2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density-voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of [Formula: see text]15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.

A novel smart lighting clinical testbed.

A real-time, feedback-capable, variable spectrum lighting system was recently installed at the University of New Mexico Hospital to facilitate biomedical research on the health impacts of lighting. The system consists of variable spectrum troffers, color sensors, occupancy sensors, and computing and communication infrastructure, and is the only such clinical facility in the US. The clinical environment posed special challenges for installation as well as for ongoing maintenance and operations. Pilot studies are currently underway to evaluate the effectiveness of the system to regulate circadian phase in subjects with delayed sleep-wake phase disorder.

Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets.

We established locally varying strain fields in unmodified MoS2 nanosheets. The approach relies on dry release in place of multilayer MoS2 on textured Si substrates. By this process we demonstrated intense photoluminescence, a ∼70 meV decrease of the transition energy, and exciton funneling in ∼4 nm-thick MoS2 films.

Solution nuclear magnetic resonance spectroscopy on a nanostructured diamond chip.

Sensors using nitrogen-vacancy centers in diamond are a promising tool for small-volume nuclear magnetic resonance (NMR) spectroscopy, but the limited sensitivity remains a challenge. Here we show nearly two orders of magnitude improvement in concentration sensitivity over previous nitrogen-vacancy and picoliter NMR studies. We demonstrate NMR spectroscopy of picoliter-volume solutions using a nanostructured diamond chip with dense, high-aspect-ratio nanogratings, enhancing the surface area by 15 times. The nanograting sidewalls are doped with nitrogen-vacancies located a few nanometers from the diamond surface to detect the NMR spectrum of roughly 1 pl of fluid lying within adjacent nanograting grooves. We perform 1H and 19F nuclear magnetic resonance spectroscopy at room temperature in magnetic fields below 50 mT. Using a solution of CsF in glycerol, we determine that 4 ± 2 × 1012 19F spins in a 1 pl volume can be detected with a signal-to-noise ratio of 3 in 1 s of integration.Nitrogen vacancy (NV) centres in diamond can be used for NMR spectroscopy, but increased sensitivity is needed to avoid long measurement times. Kehayias et al. present a nanostructured diamond grating with a high density of NV centres, enabling NMR spectroscopy of picoliter-volume solutions.

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation.

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 µm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the µm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 µS µm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

Cloaking of solar cell contacts at the onset of Rayleigh scattering.

Electrical contacts on the top surface of solar cells and light emitting diodes cause shadow losses. The phenomenon of extraordinary optical transmission through arrays of subwavelength holes suggests the possibility of engineering such contacts to reduce the shadow using plasmonics, but resonance effects occur only at specific wavelengths. Here we describe instead a broadband effect of enhanced light transmission through arrays of subwavelength metallic wires, due to the fact that, in the absence of resonances, metal wires asymptotically tend to invisibility in the small size limit regardless of the fraction of the device area taken up by the contacts. The effect occurs for wires more than an order of magnitude thicker than the transparency limit for metal thin films. Finite difference in time domain calculations predict that it is possible to have high cloaking efficiencies in a broadband wavelength range, and we experimentally demonstrate contact shadow losses less than half of the geometric shadow.

Oscillatory penetration of near-fields in plasmonic excitation at metal-dielectric interfaces.

The electric field immediately below an illuminated metal-film that is perforated with a hole array on a dielectric consists of direct transmission and scattering of the incident light through the holes and evanescent near-field from plasmonic excitations. Depending on the size and shape of the hole apertures, it exhibits an oscillatory decay in the propagation direction. This unusual field penetration is explained by the interference between these contributions, and is experimentally confirmed through an aperture which is engineered with four arms stretched out from a simple circle to manipulate a specific plasmonic excitation available in the metal film. A numerical simulation quantitatively supports the experiment. This fundamental characteristic will impact plasmonics with the near-fields designed by aperture engineering for practical applications.

Intrinsic polarization control in rectangular GaN nanowire lasers.

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm(-2) and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

CMOS-compatible plenoptic detector for LED lighting applications.

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.