Organelle-dependent polyprotein designs enable stoichiometric expression of nitrogen fixation components targeted to mitochondria.

Introducing nitrogen fixation (nif  ) genes into eukaryotic genomes and targeting Nif components to mitochondria or chloroplasts is a promising strategy for engineering nitrogen-fixing plants. A prerequisite for achieving nitrogen fixation in crops is stable and stoichiometric expression of each component in organelles. Previously, we designed a polyprotein-based nitrogenase system depending on Tobacco Etch Virus protease (TEVp) to release functional Nif components from five polyproteins. Although this system satisfies the demand for specific expression ratios of Nif components in Escherichia coli, we encountered issues with TEVp cleavage of polyproteins targeted to yeast mitochondria. To overcome this obstacle, a version of the Nif polyprotein system was constructed by replacing TEVp cleavage sites with minimal peptide sequences, identified by knowledge-based engineering, that are susceptible to cleavage by the endogenous mitochondrial-processing peptidase. This replacement not only further reduces the number of genes required, but also prevents potential precleavage of polyproteins outside the target organelle. This version of the polyprotein-based nitrogenase system achieved levels of nitrogenase activity in E. coli, comparable to those observed with the TEVp-based polyprotein nitrogenase system. When applied to yeast mitochondria, stable and balanced expression of Nif components was realized. This strategy has potential advantages, not only for transferring nitrogen fixation to eukaryotic cells, but also for the engineering of other metabolic pathways that require mitochondrial compartmentalization.

Reshaping the murine immunoglobulin heavy chain repertoire with bovine DH genes.

Having a limited number of VH segments, cattle rely on uniquely long DH gene segments to generate CDRH3 length variation (3-70 aa) far greater than that in humans or mice. Bovine antibodies with ultralong CDRH3s (>50 aa) possess unusual structures and abilities to bind to special antigens. In this study, we replaced most murine endogenous DH segments with bovine DH genes, generating a mouse line termed B-DH. The use of bovine DH genes significantly increased the length variation of CDRH3 and consequently the Ig heavy chain repertoire in B-DH mice. However, no ultralong CDRH3 was observed in B-DH mice, suggesting that other factors, in addition to long DH genes, are also involved in the formation of ultralong CDRH3. The B-DH mice mounted a normal humoral immune response to various antigens, although the B-cell developmental paradigm was obviously altered compared with wild-type mice. Additionally, B-DH mice are not predisposed to the generation of autoantibodies despite the interspecies DH gene replacement. The B-DH mice reported in this study provide a unique model to answer basic questions regarding the synergistic evolution of DH and VH genes, VDJ recombination and BCR selection in B-cell development.

Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film.

Optical memories are vitally important for the future development of high speed and low cost information technologies. Current optical memory devices still suffer from difficulties such as scaling-down of size, short-life expectancy, and non-volatility without the control of a gate electrode. To resolve these obstacles, a robust photoelectronic memory device is designed and demonstrated based on the integration of amorphous InGaZnO (a-IGZO), GNSs, and nitride multiple-quantum-wells light-emitting diode (MQWs LED). Utilizing the inherent nature of the band alignment between a-IGZO and graphene nanosheets (GNSs), electrons can transfer from a-IGZO to GNSs causing a persistent photoconductivity (PPC). With the long-lasting lifetime of PPC, the signal can be written optically and the encoded signal can be read both electrically and optically. The read and write processes reveal little current degradation for more than 10,000 sec, even repeated for more than hundred times. The device can convert invisible information to visible signal, and the encoded information can be simply erased under a reversed bias without a gate electrode. In addition, the memory device possesses a simple vertically stacked structure for 3D integration, and it is compatible with established technologies.

Hybrid Optical/Electric Memristor for Light-Based Logic and Communication.

Light-based information processing has the potential to increase speed, security, and scalability of electronic devices if issues in the device complexity could be resolved. We here demonstrate an integrated nanoelectronic device that can combine, store, and manipulate optical and electronic information. Employing a mechanically flexible and multilayered structure, a device is realized that shows memristive behavior. Illumination is shown to control the device operation in several unique ways. First, the device produces photocurrent that allows us to read out the device state in a self-powered manner. More importantly, a varying light intensity modulates the switching transition in a proportional manner that is akin to a neuron with variable plasticity and which can be taught and queried using either light or electrical inputs. This behavior enables a multilevel light-controlled logic and teaching schemes that can be applied to light-based communication devices and provides a route toward ubiquitous and low-cost sensors for future internet of things applications.

Highly Sensitive, Visible Blind, Wearable, and Omnidirectional Near-Infrared Photodetectors.

Visible blind near-infrared (NIR) photodetection is essential when it comes to weapons used by military personnel, narrow band detectors used in space navigation systems, medicine, and research studies. The technological field of filterless visible blind, NIR omnidirectional photodetection and wearability is at a preliminary stage. Here, we present a filterless and lightweight design for a visible blind and wearable NIR photodetector capable of harvesting light omnidirectionally. The filterless NIR photodetector comprises the integration of distinct features of lanthanide-doped upconversion nanoparticles (UCNPs), graphene, and micropyramidal poly(dimethylsiloxane) (PDMS) film. The lanthanide-doped UCNPs are designed such that the maximum narrow band detection of NIR is easily accomplished by the photodetector even in the presence of visible light sources. Especially, the 4f n electronic configuration of lanthanide dopant ions provides for a multilevel hierarchical energy system that provides for longer lifetime of the excited states for photogenerated charge carriers to transfer to the graphene layer. The graphene layer can serve as an outstanding conduction path for photogenerated charge carrier transfer from UCNPs, and the flexible micropyramidal PDMS substrate provides an excellent platform for omnidirectional NIR light detection. Owing to these advantages, a photoresponsivity of ∼800 AW-1 is achieved by the NIR photodetector, which is higher than the values ever reported by UCNPs-based photodetectors. In addition, the photodetector is stretchable, durable, and transparent, making it suitable for next-generation wearable optoelectronic devices.

Ultrahigh Sensitive and Flexible Magnetoelectronics with Magnetic Nanocomposites: Toward an Additional Perception of Artificial Intelligence.

In recent years, flexible magnetoelectronics has attracted a great attention for its intriguing functionalities and potential applications, such as healthcare, memory, soft robots, navigation, and touchless human-machine interaction systems. Here, we provide the first attempt to demonstrate a new type of magneto-piezoresistance device, which possesses an ultrahigh sensitivity with several orders of resistance change under an external magnetic field (100 mT). In our device, Fe-Ni alloy powders are embedded in the silver nanowire-coated micropyramid polydimethylsiloxane films. Our devices can not only serve as an on/off switch but also act as a sensor that can detect different magnetic fields because of its ultrahigh sensitivity, which is very useful for the application in analog signal communication. Moreover, our devices contain several key features, including large-area and easy fabrication processes, fast response time, low working voltage, low power consumption, excellent flexibility, and admirable compatibility onto a freeform surface, which are the critical criteria for the future development of touchless human-machine interaction systems. On the basis of all of these unique characteristics, we have demonstrated a nontouch piano keyboard, instantaneous magnetic field visualization, and autonomous power system, making our new devices be integrable with magnetic field and enable to be implemented into our daily life applications with unfamiliar human senses. Our approach therefore paves a useful route for the development of wearable electronics and intelligent systems.

Dirac point induced ultralow-threshold laser and giant optoelectronic quantum oscillations in graphene-based heterojunctions.

The occurrence of zero effective mass of electrons at the vicinity of the Dirac point is expected to create new paradigms for scientific research and technological applications, but the related discoveries are rather limited. Here, we demonstrate that a simple architecture composed of graphene quantum dots sandwiched by graphene layers can exhibit several intriguing features, including the Dirac point induced ultralow-threshold laser, giant peak-to-valley ratio (PVR) with ultra-narrow spectra of negative differential resistance and quantum oscillations of current as well as light emission intensity. In particular, the threshold of only 12.4 nA cm-2 is the lowest value ever reported on electrically driven lasers, and the PVR value of more than 100 also sets the highest record compared with all available reports on graphene-based devices. We show that all these intriguing phenomena can be interpreted based on the unique band structures of graphene quantum dots and graphene as well as resonant quantum tunneling.In graphene, electrons possess zero effective mass in proximity to the Dirac point, an unusual feature that could trigger the development of novel photonic devices. Here, the authors combine graphene quantum dots with two graphene layers and observe laser action with ultralow threshold.

The dual functions of the extreme N-terminus of TDP-43 in regulating its biological activity and inclusion formation.

TAR DNA-binding protein-43 (TDP-43) is the principal component of ubiquitinated inclusions in amyotrophic lateral sclerosis (ALS) and the most common pathological subtype of frontotemporal dementia-frontotemporal lobar degeneration with TDP-43-positive inclusions (FTLD-TDP). To date, the C-terminus of TDP-43, which is aggregation-prone and contains almost all ALS-associated mutations, has garnered much attention while the functions of the N-terminus of TDP-43 remain largely unknown. To bridge this gap in our knowledge, we utilized novel cell culture and computer-assisted models to evaluate which region(s) of TDP-43 regulate its folding, self-interaction, biological activity and aggregation. We determined that the extreme N-terminus of TDP-43, specifically the first 10 residues, regulates folding of TDP-43 monomers necessary for proper homodimerization and TDP-43-regulated splicing. Despite such beneficial functions, we discovered an interesting dichotomy: full-length TDP-43 aggregation, which is believed to be a pathogenic process, also requires the extreme N-terminus of TDP-43. As such, we provide new insight into the structural basis for TDP-43 function and aggregation, and we suggest that stabilization of TDP-43 homodimers, the physiologically active form of TDP-43, may be a promising therapeutic strategy for ALS and FTLD-TDP.

Syntheses and structures of heterometallic clusters by the reaction of o-carboranyl cobaltadichalcogenolato complexes.

Metalladichalcogenolate cluster complexes [Cp'Co{E(2)C(2)(B(10)H(10))}]{Co2(CO)5} [Cp' = eta5-C5H5, E = S(3a), E = Se(3b); Cp' = eta5-C5(CH3)5, E = S(4a), E = Se(4b)], {CpCo[E(2)C(2)(B(10)H(10))]}(2)Mo(CO)2] [E = S(5a), Se(5b)], Cp*Co(micro2-CO)Mo(CO)(py)2[E(2)C(2)(B(10)H(10))] [E = S(6a), Se(6b)], Cp*Co[E(2)C(2)(B(10)H(10))]Mo(CO)2[E(2)C(2)(B(10)H(10))] [E = S(7a), Se(7b)], (Cp'Co[E(2)C(2)(B(10)H(10))]W(CO)2 [E(2)C(2)(B(10)H(10))] [Cp' = eta5-C5H5, E = S(8a), E = Se(8b); Cp' = eta5-C5(CH3)5, E = S(9a), E = Se(9b)], {CpCo[E(2)C(2)(B(10)H(10))]}(2)Ni [E = S(10a), Se(10b)] and 3,4-(PhCN(4)S)-3,1,2-[PhCN(4)SCo(Cp)S(2)]-3,1,2-CoC(2)B(9)H(8) 12 were synthesized by the reaction of [Cp'CoE(2)C(2)(B(10)H(10))] [Cp' = eta5-C5H5, E = S(1a), E = Se(1b); Cp' = eta5-C5(CH3)5, E = S(2a), E = Se(2b)] with Co2(CO)8, M(CO)3(py)3 (M = Mo, W), Ni(COD)2, [Rh(COD)Cl]2, and LiSCN4Ph respectively. Their spectrum analyses and crystal structures were investigated. In this series of multinuclear complexes, 3a,b and 4a,b contain a closed Co3 triangular geometry, while in complexes 5a-7b three different structures were obtained, the tungsten-cobalt mixed-metal complexes have only the binuclear structure, and the nickel-cobalt complexes were obtained in the trinuclear form. A novel structure was found in metallacarborane complex 12, with a B-S bond formed at the B(7) site. The molecular structures of 4a, 5a, 6a, 7b, 9a, 9b, 10a and 12 have been determined by X-ray crystallography.

Synthesis and structure of heterometallic complexes (RhFe, CoFe) containing bridging 1,2-dicarba-closo-dodecarborane-1,2-dichalcogenolato ligands.

The prototype hetero-binuclear complexes containing metal-metal bonds, {CpRh[E2C2(B10H10)]}[Fe(CO)3] (Cp = Cp* = eta 5-Me5C5, E = S(5a), Se(5b); Cp = Cp = eta 5-1,3-tBu2C5H3, E = S(6a), Se(6b)) and {CpCo[E2C2(B10H10)]}[Fe(CO)3] (Cp = Cp* = eta 5-Me5C5, E = S(7a), Se(7b); Cp = Cp = eta 5-C5H5, E = S(8a), Se(8b)) were obtained from the reactions of 16-electron complexes CpRh[E2C2(B10H10)] (Cp = Cp*, E = S(1a), Se(1b); Cp = Cp, E = S(2a), Se(2b)), CpCo[E2C2(B10H10)] (Cp = Cp*, E = S(3a), Se(3b); Cp = Cp, E = S(4a), Se(4b)) with Fe(CO)5 in the presence of Me3NO. The molecular structures of {Cp*Rh[E2C2(B10H10)]}[Fe(CO)3] (E = S(5a), Se(5b)), {CpRh[S2C2(B10H10)]}[Fe(CO)3] (6a) {Cp*Co[S2C2(B10H10)]}[Fe(CO)3] (7a) and {CpCo[S2C2(B10H10)]}[Fe(CO)3] (8a) have been determined by X-ray crystallography. All these complexes were characterized by elemental analysis and IR and NMR spectra.

Heterometallic cluster complexes (RhMo, RhW) containing bridging 1,2-dicarba-closo-dodecaborane-1,2-dichalocogenolato ligands.

The 16-electron half-sandwich rhodium complex [Cp*Rh{E2C2(B10H10)}] [Cp* = eta5-C5Me5, E = S (1a), Se (1b)] [Cp*Rh{E2C2(B10H10)} = eta5-pentamethylcyclopentadienyl[1,2-dicarba-closo-dodecaborane(12)-dichalcogenolato]rhodium] reacted with Mo(CO)3(py)3 in the presence of BF3.Et2O in THF solution to afford the {Cp*Rh[E2C2(B10H10)]}2Mo(CO)2 (E = S (3a); Se (3b)), {Cp*Rh[S2C2(B10H10)]}{Mo(CO)2[S2C2(B10H10)]} (4). The voluminous di-tert-butyl substituted Cp half-sandwich rhodium complex [Cp'Rh{E2C2(B10H10)}] [E = S (2a), Se (2b)] [CpRh{E2C2(B10H10)} = eta5-(1,3-di(tert-butyl)cyclopentadienyl-[1,2-dicarba-closo-dodecaborane(12)-dichalcogenolato]rhodium) reacted with W(CO)3(py)3 in the presence of BF3.Et2O in THF solution to give the {Cp'Rh[S2C2(B10H10)]}{W(CO)2[S2C2(B10H10)]} (5) and {Cp'Rh[Se2C2(B10H10)]}(mu-CO)[W(CO)3] (6), respectively. The complexes have been fully characterized by IR and NMR spectroscopy as well as by elemental analyses. The X-ray crystal structures of the complexes 3-6 are reported.

Synthesis and characterization of heterometallic clusters (Ir2Rh, Ir2W, Rh3) Containing 1,2-dicarba-closo-dodecaborane(12)-1,2-dithiolate chelate ligands, [(B10H10)C2S2]2-.

The 16-electron half-sandwich complex [Cp*Ir[S2C2(B10H10)]] (Cp* = eta5-C5Me5) (1a) reacts with [[Rh(cod)(mu-Cl)]2] (cod = cycloocta-1,5-diene, C8H12) in different molar ratios to give three products, [[Cp*Ir[S2C2(B10H9)]]Rh(cod)] (2), trans-[[Cp*Ir[S2C2(B10H9)]]Rh[[S2C2(B10H10)]IrCp*]] (3), and [Rh2(cod)2[(mu-SH)(mu-SC)(CH)(B10H10)]] (4). Complex 3 contains an Ir2Rh backbone with two different Ir-Rh bonds (3.003(3) and 2.685(3) angstroms). The dinuclear complex 2 reacts with the mononuclear 16-electron complex 1a to give 3 in refluxing toluene. Reaction of 1a with [W(CO)3(py)3] (py = C5H5N) in the presence of BF3.EtO2 leads to the trinuclear cluster [[Cp*Ir[S2C2(B10H10)]]2W(CO)2] (5) together with [[Cp*Ir(CO)[S2C2(B10H10)]]W(CO)5] (6), and [Cp*Ir(CO)[S2C2(B10H10)]] (7). Analogous reactions of [Cp*Rh[S2C2(B10H10)]] (1 b) with [[Rh(cod)(mu-Cl)]2] were investigated and two complexes cis-[[Cp*Rh[S2C2(B10H10)]]2Rh] (8) and trans-[[Cp*Rh[S2C2(B10H10)]]2Rh] (9) were obtained. In refluxing THF solution, the cisoid 8 is converted in more than 95 % yield to the transoid 9. All new complexes 2-9 were characterized by NMR spectroscopy (1H, 11B NMR) and X-ray diffraction structural analyses are reported for complexes 2-5, 8, and 9.