Resolidified Chalcogen-Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders.

Bilayer semiconductors have attracted much attention due to their stacking-order-dependent properties. However, as both 3R- and 2H-stacking are energetically stable at high temperatures, most of the high-temperature grown bilayer materials have random 3R- or 2H-stacking orders, leading to non-uniformity in optical and electrical properties. Here, a chemical vapor deposition method is developed to grow bilayer semiconductors with controlled stacking order by modulating the resolidified chalcogen precursors supply kinetics. Taking tungsten disulfide (WS2 ) as an example, pure 3R-stacking (100%) and 2H-stacking dominated (87.6%) bilayer WS2 are grown by using this method and both show high structural and optical quality and good uniformity. Importantly, the bilayer 3R-stacking WS2 shows higher field effect mobility than 2H-stacking samples, due to the difference in stacking order-dependent surface potentials. This method is universal for growing other bilayer semiconductors with controlled stacking orders including molybdenum disulfide and tungsten diselenide, paving the way to exploit stacking-order-dependent properties of these family of emerging bilayer materials.

Eosinophilic granulomatosis with polyangiitis, asthma as the first symptom, and subsequent Loeffler endocarditis: A case report.

BACKGROUND: Eosinophilic granulomatosis with polyangiitis (EGPA), formerly known as Churg-Strauss syndrome, is a rare form of anti-neutrophil cytoplasmic antibody-associated vasculitis characterized by asthma, vasculitis, and eosinophilia. CASE SUMMARY: We report an atypical case of EGPA in a 20-year-old female patient. Unlike previously reported cases of EGPA, this patient's initial symptom was asthma associated with a respiratory infection. This was followed by Loeffler endocarditis and cardiac insufficiency. She received treatment with methylprednisolone sodium succinate, low molecular weight heparin, recombinant human brain natriuretic peptide, furosemide, cefoperazone sodium/sulbactam sodium, and acyclovir. Despite prophylactic anticoagulation, she developed a large right ventricular thrombus. EGPA diagnosis was confirmed based on ancillary test results and specialty consultations. Subsequent treatment included mycophenolate mofetil. Her overall condition improved significantly after treatment, as evidenced by decreased peripheral blood eosinophils and cardiac markers. She was discharged after 17 d. Her most recent follow-up showed normal peripheral blood eosinophil levels, restored cardiac function, and a reduced cardiac mural thrombus size. CONCLUSION: This case illustrates the swift progression of EGPA and underscores the significance of early detection and immediate intervention to ensure a favorable prognosis.

High-Responsivity and Broadband MoS2 Photodetector Using Interfacial Engineering.

Combining MoS2 with mature silicon technology is an effective method for preparing high-performance photodetectors. However, the previously studied MoS2/silicon-based heterojunction photodetectors cannot simultaneously demonstrate high responsivity, a fast response time, and broad spectral detection. We constructed a broad spectral n-type MoS2/p-type silicon-based heterojunction photodetector. The SiO2 dielectric layer on the silicon substrate was pretreated with soft plasma to change its thickness and surface state. The pretreated SiO2 dielectric layer and the silicon substrate constitute a multilayer heterostructure with a high carrier concentration and responsiveness. Taking silicon-based and n-type MoS2 heterojunction photodetectors as examples, its responsivity can reach 4.05 × 104 A W1- at 637 nm wavelength with a power density of 2 µW mm-2, and the detectable spectral range is measured from 447 to 1600 nm. This pretreated substrate was proven applicable to other n-type TMDCs, such as MoTe2, ReS2, etc., with certain versatility.

Novel 3D local feature descriptor of point clouds based on spatial voxel homogenization for feature matching.

Obtaining a 3D feature description with high descriptiveness and robustness under complicated nuisances is a significant and challenging task in 3D feature matching. This paper proposes a novel feature description consisting of a stable local reference frame (LRF) and a feature descriptor based on local spatial voxels. First, an improved LRF was designed by incorporating distance weights into Z- and X-axis calculations. Subsequently, based on the LRF and voxel segmentation, a feature descriptor based on voxel homogenization was proposed. Moreover, uniform segmentation of cube voxels was performed, considering the eigenvalues of each voxel and its neighboring voxels, thereby enhancing the stability of the description. The performance of the descriptor was strictly tested and evaluated on three public datasets, which exhibited high descriptiveness, robustness, and superior performance compared with other current methods. Furthermore, the descriptor was applied to a 3D registration trial, and the results demonstrated the reliability of our approach.

High-performance multilayer WSe2/SnS2p-n heterojunction photodetectors by two step confined space chemical vapor deposition.

Two-dimensional (2D) p-n heterojunctions have attracted great attention due to their outstanding properties in electronic and optoelectronic devices, especially in photodetectors. Various types of heterojunctions have been constituted by mechanical exfoliation and stacking. However, achieving controlled growth of heterojunction structures remains a tremendous challenge. Here, we employed a two-step KI-assisted confined-space chemical vapor deposition method to prepare multilayer WSe2/SnS2p-n heterojunctions. Optical characterization results revealed that the prepared WSe2/SnS2vertical heterostructures have clear interfaces as well as vertical heterostructures. The electrical and optoelectronic properties were investigated by constructing the corresponding heterojunction devices, which exhibited good rectification characteristics and obtained a high detectivity of 7.85 × 1012Jones and a photoresponse of 227.3 A W-1under visible light irradiation, as well as a fast rise/fall time of 166/440µs. These remarkable performances are likely attributed to the ultra-low dark current generated in the depletion region at the junction and the high direct tunneling current during illumination. This work demonstrates the value of multilayer WSe2/SnS2heterojunctions for applications in high-performance photodetectors.

Ultralow-iridium content NiIr alloy derivative nanochain arrays as bifunctional electrocatalysts for overall water splitting.

The development of low-cost and high-durability bifunctional electrocatalysts is of considerable importance for overall water splitting (OWS). This work reports the controlled synthesis of nickel-iridium alloy derivative nanochain array electrodes (NiIrx NCs) with fully exposed active sites that facilitated mass transfer for efficient OWS. The nanochains have a self-supported three-dimensional core-shell structure, composed of a metallic NiIrx core and a thin (5-10 nm) amorphous (hydr)oxide film as the shell (e.g., IrO2/NiIrx and Ni(OH)2/NiIrx). Interestingly, NiIrx NCs have bifunctional properties. Particularly, the oxygen evolution reaction (OER) current density (electrode geometrical area) of NiIr1 NCs is four times higher than that of IrO2 at 1.6 V vs. RHE. Meanwhile, its hydrogen evolution reaction (HER) overpotential at 10 mA cm-2 (η10 = 63 mV) is comparable to that of 10 wt% Pt/C. These performances may originate from the interfacial effect between the surface (hydr)oxide shell and metallic NiIrx core, which facilitates the charge transfer, along with the synergistic effect between Ni2+ and Ir4+ in the (hydr)oxide shell. Furthermore, NiIr1 NCs exhibits excellent OER durability (100 h @ 200 mA cm-2) and OWS durability (100 h @ 500 mA cm-2) with the nanochain array structure well preserved. This work provides a promising route for developing effective bifunctional electrocatalysts for OWS applications.

Multiple regulation towards an all-in-one NiCuMo/MoOx heterostructure for improving alkaline hydrogen oxidation.

Herein, we report a multiple regulation strategy towards an all-in-one NiCuMo/MoOx heterostructure for the HOR, which exhibits ultrahigh HOR activity (j@0.05V = 4.63 mA cm-2) and excellent durability for almost 24 h for the synergistic regulation of Mo and Cu on the Ni electrode. This study provides a new strategy for designing efficient non-noble metal-based HOR catalysts.

Worm-like porous and defect-structured cadmium stannate photoanodes for enhanced solar water oxidation.

The work aims to elucidate the importance of hybrid microwave annealing technology (HMA) in ultrafast fabrication of deficient cadmium stannate (Cd2SnO4) photoanodes with a worm-like porous structure and significant enhancement of solar water oxidation performance and stability. Comparison of three synthetic routes and experimental characterization revealed that relative to conventional thermal annealing (CTA) or even with extra HMA for 5 min (optimal), direct HMA for only 8 min can form cubic Cd2SnO4 thin films of unique worm-like and highly porous nanostrucures with a large interfacial surface area, high degree of phase crystallinity and high-concentration defects. The obtained results from the photoluminescence spectra and the charge efficiency measurements collaboratively verified that compared to using CTA treatment solely, the HMA treatment is effective in significantly improving charge separation, recombination and transfer processes, mainly by an over 13.5-fold increase in the bulk charge separation efficiency. Benefiting from these merits, under optimized conditions the HMA treated Cd2SnO4 film exhibited a remarkable 6-fold and 2-fold solar photocurrent enhancement compared with those of the CTA treated one and the combined CTA-HMA treated one, respectively, and an IPCE of 39% at 300 nm and 18% at 350 nm at 1.7 V versus RHE. Despite a high external bias required in this case, the study provides a simple route for synthesis of ideal Cd2SnO4 photoanodes which can be further extended to doping engineering and non-noble metal cocatalyst deposition.

Space-Confined One-Step Growth of 2D MoO2 /MoS2 Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline Electrolytes.

2D material-based heterostructures are constructed by stacking or spicing individual 2D layers to create an interface between them, which have exotic properties. Here, a new strategy for the in situ growth of large numbers of 2D heterostructures on the centimeter-scale substrate is developed. In the method, large numbers of 2D MoS2 , MoO2 , or their heterostructures of MoO2 /MoS2 are controllably grown in the same setup by simply tuning the gap distance between metal precursor and growth substrate, which changes the concentration of metal precursors feed. A lateral force microscope is used first to identify the locations of each material in the heterostructures, which have MoO2 on the top of MoS2 . Noteworthy, the creation of a clean interface between atomic thin MoO2 (metallic) and MoS2 (semiconducting) results in a different electronic structure compared with pure MoO2 and MoS2 . Theoretical calculations show that the charge redistribution at such an interface results in an improved HER performance on the MoO2 /MoS2 heterostructures, showing an overpotential of 60 mV at 10 mA cm-2 and a Tafel slope of 47 mV dec-1 . This work reports a new strategy for the in situ growth of heterostructures on large-scale substrates and provides platforms to exploit their applications.

Reinforced Layered Double Hydroxide Oxygen-Evolution Electrocatalysts: A Polyoxometallic Acid Wet-Etching Approach and Synergistic Mechanism.

Nickel-iron-based layered double hydroxides (NiFe LDHs) have attracted tremendous research and industrial interests for oxygen evolution reaction (OER) electrocatalysis. However, methodologies on simultaneous regulation of performance-influencing factors remain scarce and their real synergistic effects are not clear enough. Herein, a versatile polyoxometallic acids (POMs) etching approach is reported to ingeniously reconstruct NiFe LDH, including 3D morphological nanotailoring, Fe3+ and α-Ni(OH)2 active species reconfiguration, creation of multiple Ni, Fe, and O vacancies, and intercalation of POM polyanionic clusters. The experimental and theoretical data collaboratively unveil that control of the key performance-influencing factors and their multiple synergistic mechanisms dominantly contribute to the step-like OER performance enhancement. The reinforced electrocatalyst is further produced with low cost and high performance up to Ф180 mm in diameter, showing its feasibility and advancement of the promising configuration of NiFe LDH-PMo12(+) II Ni@NiFe LDH(-) for alkaline anion-exchange-membrane electrode stack cells. Furthermore, to mathematically evaluate the evolution, a novel empirical formula is proposed for quantitative identification of structure-activity correlations, which offers an opportunity for first and fast reliability on materials screening.

Lithography-free and high-efficiency preparation of black phosphorous devices by direct evaporation through shadow mask.

Two-dimensional (2D) materials including black phosphorus (BP) have been extensively investigated because of their exotic physical properties and potential applications in nanoelectronics and optoelectronics. Fabricating BP based devices is challenging because BP is extremely sensitive to the external environment, especially to the chemical contamination during the lithography process. The direct evaporation through shadow mask technique is a clean method for lithography-free electrode patterning of 2D materials. Herein, we employ the lithography-free evaporation method for the construction of BP based field-effect transistors and photodetectors and systematically compare their performances with those of BP counterparts fabricated by conventional lithography and transfer electrode methods. The results show that BP devices fabricated by direct evaporation method possess higher mobility, faster response time, and smaller hysteresis than those prepared by the latter two methods. This can be attributed to the clean interface between BP and evaporated-electrodes as well as the lower Schottky barrier height of 20.2 meV, which is given by the temperature-dependent electrical results. Furthermore, the BP photodetectors exhibit a broad-spectrum response and polarization sensitivity. Our work elucidates a universal, low-cost and high-efficiency method to fabricate BP devices for optoelectronic applications.

Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides.

Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called 'dissolution-precipitation' (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

Air-Stable Mn doped CuCl/CuO Hybrid Triquetrous Nanoarrays as Bifunctional Electrocatalysts for Overall Water Splitting.

The development of highly efficient non-precious metal catalysts for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) is key for large-scale hydrogen evolution through water splitting technology. Here, we report an air-stable Cu-based nanostructure consisting of Mn doped CuCl and CuO (CuCl/CuO(Mn)-NF) as a dual functional electrocatalyst for water splitting. CuCl is identified as the main active component, together with Mn doping and the synergistic effect between CuCl and CuO are found to make responsibility for the excellent OER and HER catalytic activity and stability. The assembled electrolyzes also exhibit decent water splitting performance. This work not only provides a simple method for preparing Cu-based composite catalyst, but also demonstrates the great potential of Cu-based non-noble metal electrocatalysts for water splitting and other renewable energy conversion technologies.

Designing artificial two-dimensional landscapes via atomic-layer substitution.

Technology advancements in history have often been propelled by material innovations. In recent years, two-dimensional (2D) materials have attracted substantial interest as an ideal platform to construct atomic-level material architectures. In this work, we design a reaction pathway steered in a very different energy landscape, in contrast to typical thermal chemical vapor deposition method in high temperature, to enable room-temperature atomic-layer substitution (RT-ALS). First-principle calculations elucidate how the RT-ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. As a result, a variety of Janus monolayer transition metal dichalcogenides with vertical dipole could be universally realized. In particular, the RT-ALS strategy can be combined with lithography and flip-transfer to enable programmable in-plane multiheterostructures with different out-of-plane crystal symmetry and electric polarization. Various characterizations have confirmed the fidelity of the precise single atomic layer conversion. Our approach for designing an artificial 2D landscape at selective locations of a single layer of atoms can lead to unique electronic, photonic, and mechanical properties previously not found in nature. This opens a new paradigm for future material design, enabling structures and properties for unexplored territories.

Ultralow contact resistance between semimetal and monolayer semiconductors.

Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices1,3. However, owing to metal-induced gap states (MIGS)4-7, energy barriers at the metal-semiconductor interface-which fundamentally lead to high contact resistance and poor current-delivery capability-have constrained the improvement of two-dimensional semiconductor transistors so far2,8,9. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore's law.

Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.

Double-Electromagnetically-Induced-Transparency Ground-State Cooling of Stationary Two-Dimensional Ion Crystals.

We theoretically and experimentally investigate double-electromagnetically-induced transparency (double-EIT) cooling of two-dimensional ion crystals confined in a Paul trap. The double-EIT ground-state cooling is observed for ^{171}Yb^{+} ions with a clock state, for which EIT cooling has not been realized like many other ions with a simple Λ scheme. A cooling rate of n[over ¯][over ˙]=34(±1.8) ms^{-1} and a cooling limit of n[over ¯]=0.06(±0.059) are observed for a single ion. The measured cooling rate and limit are consistent with theoretical predictions. We apply double-EIT cooling to the transverse modes of two-dimensional (2D) crystals with up to 12 ions. In our 2D crystals, the micromotion and the transverse mode directions are perpendicular, which makes them decoupled. Therefore, the cooling on transverse modes is not disturbed by micromotion, which is confirmed in our experiment. For the center of mass mode of a 12-ion crystal, we observe a cooling rate and a cooling limit that are consistent with those of a single ion, including heating rates proportional to the number of ions. This method can be extended to other hyperfine qubits, and near ground-state cooling of stationary 2D crystals with large numbers of ions may advance the field of quantum information sciences.

Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.

Unsaturated Single Atoms on Monolayer Transition Metal Dichalcogenides for Ultrafast Hydrogen Evolution.

Large-scale implementation of electrochemical water splitting for hydrogen evolution requires cheap and efficient catalysts to replace expensive platinum. However, catalysts that work well at high current densities with ultrafast intrinsic activities is still the central challenge for hydrogen evolution. An ideal case is to use single atoms on monolayer two-dimensional (2D) materials, which simplifies the system and in turn benefits the mechanism study, but is a grand challenge to synthesize. Here, we report a universal cold hydrogen plasma reduction method for synthesizing different single atoms sitting on 2D monolayers. In the case of molybdenum disulfide, we design and identify a type of active site, i.e., unsaturated Mo single atoms on cogenetic monolayer molybdenum disulfide. The catalyst shows exceptional intrinsic activity with a Tafel slope of 36.4 mV dec-1 in 0.5 M H2SO4 and superior performance at a high current density of 400 mA cm-2 with an overpotential of ∼260 mV, based on single flake microcell measurements. Theoretical studies indicate that coordinately unsaturated Mo single atoms sitting on molybdenum disulfide increase the bond strength between adsorbed hydrogen atoms and the substrates through hybridization, leading to fast hydrogen adsorption/desorption kinetics and superior hydrogen evolution activity. This work shines fresh light on preparing highly efficient electrocatalysts for water splitting and other electrochemical processes, as well as provides a general method to synthesize single atoms on two-dimensional monolayers.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties.

Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS2 is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS2 lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO2 additive to the MoS2 growth process reshapes the morphology and increases lateral size of Mn-doped MoS2 . Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS2 shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS2 electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.