Growth Dynamics of Ultrathin Films of Benzo[1,2-b:4,5-b']dithiophene Derivatives on Au(111): A Photoelectron Spectroscopy Investigation.

Ultrathin films of a stereoisomeric mixture of benzo[1,2-b:4,5-b']dithiophene derivatives were grown by thermal evaporation in vacuum on Au(111), and they were studied in situ by photoelectron spectroscopy. X-ray photons from a non-monochromatic Mg Kα conventional X-ray source and UV photons from a He I discharge lamp equipped with a linear polarizer were used. He I photoemission results were compared with density functional theory (DFT) calculations: density of states (DOS) and 3D molecular orbital density distribution. Au 4f, C 1s, O 1s, and S 2p core-level components suggest a surface rearrangement as a function of film nominal thickness, with the variation of the molecular orientation, from flat-laying at the initial deposition to tilted toward the surface normal at coverages exceeding 2 nm. Eventually, the DFT results were exploited in assigning of the valence band experimental structures. Moreover, polarization-dependent photoemission confirmed the tilted arrangement of the molecules, starting at 2 nm. A variation of the work function of 1.4 eV with respect to the clean substrate was measured, together with a valence band offset of 1.3 eV between the organic layer and gold.

Electrical conduction and noise spectroscopy of sodium-alginate gold-covered ultrathin films for flexible green electronics.

Green electronics is an emerging topic that requires the exploration of new methodologies for the integration of green components into electronic devices. Therefore, the development of alternative and eco-friendly raw materials, biocompatible and biodegradable, is of great importance. Among these, sodium-alginate is a natural biopolymer extracted from marine algae having a great potential in terms of transparency, flexibility, and conductivity, when functionalized with a thin gold (Au) layer. The electrical transport of these flexible and conducting substrates has been studied, by DC measurements, from 300 to 10 K, to understand the interplay between the organic substrate and the metallic layer. The results were compared to reference bilayers based on polymethyl-methacrylate, a well-known polymer used in electronics. In addition, a detailed investigation of the electric noise properties was also performed. This analysis allows to study the effect of charge carriers fluctuations, providing important information to quantify the minimum metallic thickness required for electronic applications. In particular, the typical noise behavior of metallic compounds was observed in samples covered with 5 nm of Au, while noise levels related to a non-metallic conduction were found for a thickness of 4.5 nm, despite of the relatively good DC conductance of the bilayer.

Production Strategies of TiNx Coatings via Reactive High Power Impulse Magnetron Sputtering for Selective H2 Separation.

This scientific work aims to optimize the preparation of titanium nitride coatings for selective H2 separation using the Reactive High Power Impulse Magnetron Sputtering technology (RHiPIMS). Currently, nitride-based thin films are considered promising membranes for hydrogen. The first series of TiNx/Si test samples were developed while changing the reactive gas percentage (N2%) during the process. Obtained coatings were extensively characterized in terms of morphology, composition, and microstructure. A 500 nm thick, dense TiNx coating was then deposited on a porous alumina substrate and widely investigated. Moreover, the as-prepared TiNx films were heat-treated in an atmosphere containing hydrogen in order to prove their chemical and structural stability; which revealed to be promising. This study highlighted how the RHiPIMS method permits fine control of the grown layer's stoichiometry and microstructure. Moreover, it pointed out the need for a protective layer to prevent surface oxidation of the nitride membrane by air and the necessity to deepen the study of TiNx/alumina interface in order to improve film/substrate adhesion.

Electric Transport in Gold-Covered Sodium-Alginate Free-Standing Foils.

The electric transport properties of flexible and transparent conducting bilayers, realized by sputtering ultrathin gold nanometric layers on sodium-alginate free-standing films, were studied. The reported results cover a range of temperatures from 3 to 300 K. In the case of gold layer thicknesses larger than 5 nm, a typical metallic behavior was observed. Conversely, for a gold thickness of 4.5 nm, an unusual resistance temperature dependence was found. The dominant transport mechanism below 70 K was identified as a fluctuation-induced tunneling process. This indicates that the conductive region is not continuous but is formed by gold clusters embedded in the polymeric matrix. Above 70 K, instead, the data can be interpreted using a phenomenological model, which assumes an anomalous expansion of the conductive region upon decreasing the temperature, in the range from 300 to 200 K. The approach herein adopted, complemented with other characterizations, can provide useful information for the development of innovative and green optoelectronics.

Mapping of charge distribution in organic field-effect transistors by confocal photoluminescence electromodulation microscopy.

A novel method for mapping the charge density spatial distribution in organic field-effect transistors based on the electromodulation of the photoluminescence is demonstrated. In field-effect transistors exciton quenching is dominated by exciton-charge carrier interaction so that it can be used to map the charge distribution in different operating conditions. From a quantitative analysis of the photoluminescence quenching, the thickness of the charge carrier accumulation layer is derived. The injection of minority charge carriers in unipolar conditions is unexpectedly evidenced, which is not displayed by the electrical characteristics.

A time-temperature integrator based on fluorescent and polymorphic compounds.

Despite the variety of functional properties of molecular materials, which make them of interest for a number of technologies, their tendency to form inhomogeneous aggregates in thin films and to self-organize in polymorphs are considered drawbacks for practical applications. Here, we report on the use of polymorphic molecular fluorescent thin films as time temperature integrators, a class of devices that monitor the thermal history of a product. The device is fabricated by patterning the fluorescent model compound thieno(bis)imide-oligothiophene. The fluorescence colour of the pattern changes as a consequence of an irreversible phase variation driven by temperature, and reveals the temperature at which the pattern was exposed. The experimental results are quantitatively analysed in the range 20-200°C and interpreted considering a polymorph recrystallization in the thin film. Noteworthy, the reported method is of general validity and can be extended to every compound featuring irreversible temperature-dependent change of fluorescence.

π-Core tailoring for new high performance thieno(bis)imide based n-type molecular semiconductors.

The synthesis and characterization of two thieno(bis)imide based n-type semiconductors with electron mobilities of up to 0.3 cm(2) V(-1) s(-1) are described. The relationships between the electronic features of the π-inner core and the functional properties of the new materials are also discussed.

Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors.

The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.

A silk platform that enables electrophysiology and targeted drug delivery in brain astroglial cells.

Astroglial cell survival and ion channel activity are relevant molecular targets for the mechanistic study of neural cell interactions with biomaterials and/or electronic interfaces. Astrogliosis is the most typical reaction to in vivo brain implants and needs to be avoided by developing biomaterials that preserve astroglial cell physiological function. This cellular phenomenon is characterized by a proliferative state and altered expression of astroglial potassium (K(+)) channels. Silk is a natural polymer with potential for new biomedical applications due to its ability to support in vitro growth and differentiation of many cell types. We report on silk interactions with cultured neocortical astroglial cells. Astrocytes survival is similar when plated on silk-coated glass and on poly-D-lysine (PDL), a well known polyionic substrate used to promote astroglial cell adhesion to glass surfaces. Comparative analyses of whole-cell patch-clamp experiments reveal that silk- and PDL-coated cells display depolarized resting membrane potentials (-40 mV), very high input resistance, and low specific conductance, with values similar to those of undifferentiated glial cells. Analysis of K(+) channel conductance reveals that silk-astrocytes express large outwardly delayed rectifying K(+) current (K(DR)). The magnitude of K(DR) in PDL- and silk-coated astrocytes is similar, indicating that silk does not alter the resting K(+) current. We also demonstrate that guanosine- (GUO) embedded silk enables the direct modulation of astroglial K(+) conductance in vitro. Astrocytes plated on GUO-embedded silk are more hyperpolarized and express inward rectifying K(+) conductance (K(ir)). The K(+) inward current increases and this is paralleled by upregulation and membrane polarization of K(ir)4.1 protein signal. Collectively these results indicate that silk is a suitable biomaterial platform for the in vitro studies of astroglial ion channel responses and related physiology.

Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes.

The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton-charge annihilation and electrode photon losses are prevented. Our devices are >100 times more efficient than the equivalent OLED, >2x more efficient than the optimized OLED with the same emitting layer and >10 times more efficient than any other reported OLETs.

Molecular host-guest energy-transfer system with an ultralow amplified spontaneous emission threshold employing an ambipolar semiconducting host matrix.

We report on the characteristics of a host-guest lasing system obtained by coevaporation of an oligo(9,9-diarylfluorene) derivative named T3 with the red-emitter 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran dye (DCM). We demonstrate that the ambipolar semiconductor T3 can be implemented as an active matrix in the realization of a host-guest system in which an efficient energy transfer takes place from the T3 matrix to the lasing DCM molecules. We performed a detailed spectroscopic study on the system by systematically varying the DCM concentration in the T3 matrix. Measurements of steady-state photoluminescence (PL), PL quantum yield (PLQY), time-resolved picosecond PL, and amplified spontaneous emission (ASE) threshold are used to optimize the acceptor concentration at which the ASE from DCM molecules takes place with the lowest threshold. The sample with a DCM relative deposition ratio of 2% shows an ASE threshold as low as 0.6 kW/cm(2) and a net optical gain measured by femtosecond time-resolved pump-and-probe spectroscopy as high as 77 cm(-1). The reference model system Alq(3):DCM sample measured in exactly the same experimental conditions presents an one-order-of-magnitude higher ASE threshold. The ASE threshold of T3:DCM is the lowest reported to date for a molecular host-guest energy-transfer system, which makes the investigated blend an appealing system for use as an active layer in lasing devices. In particular, the ambipolar charge transport properties of the T3 matrix and its field-effect characteristics make the host-guest system presented here an ideal candidate for the realization of electrically pumped organic lasers.

Luminescent ethynyl-pyrene liquid crystals and gels for optoelectronic devices.

Two functional ethynyl-pyrene derivatives have been designed and synthesized by di- and tetra-substitutions of bromo pyrene derivatives with N-(4-ethynylphenyl)-3,4,5-tris(hexadecyloxy)benzamide fragments. The photoluminescence wavelength of the pyrene core can be tuned by the substitution pattern and the state of matter (solid, solution, gel, or liquid crystal). The disubstituted pyrene derivative 1 is not mesomorphic but produces robust and highly fluorescent gels in DMF, toluene, and cyclohexane. The well-defined fibers and ropes of the gel states were characterized by SEM and laser scanning confocal microscopy, and extended over several micrometers. The gels were integrated as active layers in field-effect transistors, which provided good bulk electron and hole charge mobilities as well as light emission generation. The tetra-substituted pyrene derivative is not a gelator but displays a stable liquid crystalline phase with 2D hexagonal symmetry between 20 and 200 degrees C. The pronounced luminescence properties of the mesophase allow one to observe original mesophase textures with flower-like patterns directly by fluorescence microscopy without crossed-polarizers.

Molecular packing effects on the optical spectra and triplet dynamics in oligofluorene films.

We report on the triplet spectra and dynamics in two types of oligomeric films deposited by two different techniques: thermal evaporation and spin coating. The different molecular arrangement in both films is manifested in a red shift of the absorption, PL, and T1-Tn absorption spectra of the sublimated film relative to the spin-coated one. Triplet recombination dynamics studied with steady-state photoinduced absorption (PA) spectroscopy follow a dispersive bimolecular recombination model away from the trap filling regime. We obtained values for the triplet bimolecular recombination ratio (beta) of 3.4 x 10 (-14) and 1.1 x 10 (-15) cm3 s (-1) for evaporated and spin-coated film, respectively, the difference being attributed to diverse molecular arrangement in both films.

Correlation between dielectric/organic interface properties and key electrical parameters in PPV-based OFETs.

We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on polyphenylenevinylene derivatives. Through a systematic investigation of the most common dielectric surface treatments, a direct correlation of their effect on the field-effect electrical parameters, such as charge carrier mobility, On/Off current ratio, threshold voltage, and current hysteresis, has been established. It is found that the presence of OH groups at the dielectric surface, already known to act as carrier traps for electrons, decreases the hole mobility whereas it does not substantially affect the other electrical characteristics. The treatment of silicon dioxide surfaces with gas phase molecules such as octadecyltrichlorosilane and hexamethyldisilazane leads to an improvement in hole mobility as well as to a decrease in current hysteresis. The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related not only to the OH groups density but also to the interaction between the dielectric and the semiconductor molecules. Specifically, the elimination of the OH groups produces the same effect observed with hexamethyldisilazane. The hole mobility values obtained with hexamethyldisilazane and polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.