Crystallization of piezoceramic films on glass via flash lamp annealing.

Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for the growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. The functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 °C. A surface haptic device was fabricated with a 1 µm-thick film (piezoelectric e33,f of -5 C m-2). Its ultrasonic surface deflection reached 1.5 µm at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass.

Impact of Strain Engineering on Antiferroelectricity in NaNbO3 Thin Films.

Thin films of NaNbO3 were grown on various substrates to investigate the effect of epitaxial strain on their structural and electrical properties. Reciprocal space maps confirmed the presence of epitaxial strain from +0.8% to -1.2%. A bulk-like antipolar ground state was detected via structural characterization for NaNbO3 thin films grown with strains ranging from a compressive strain of 0.8% to small tensile strains, up to -0.2%. For larger tensile strains on the other hand, no indication of antipolar displacements can be detected, even beyond the relaxation of the film at larger thicknesses. Electrical characterization revealed a ferroelectric hysteresis loop for thin films under a strain of +0.8% to -0.2%, while the films under larger tensile strain showed no out-of-plane polarization component. However, the films with a compressive strain of 0.8% present a saturation polarization of up to 55 µC·cm-2, more than twice as large for films grown under conditions with small strain, which is also larger than the highest values reported for bulk materials. Our results indicate the high potential for strain engineering in antiferroelectric materials, as the antipolar ground state could be retained with compressive strain. The observed enhancement of the saturation polarization by strain allows for substantial increase of energy density of the capacitors with antiferroelectric materials.