ABSTRACT
The challenge faced in optoelectronic applications of halide perovskites is their degradation. Minimizing material imperfections is critical to averting cascade degradation processes. Identifying causes of such imperfections is, however, hindered by mystified growth processes and is particularly urgent for mixed-halide perovskites because of inhomogeneity in growth and phase segregation under stresses. To unravel two-step solution growth of MAPbBr x I3-x , we monitored the evolution of Br composition and found that the construction of perovskite lattice is contributed by iodine from PbI2 substrate and Br from MABr solution with a 1:1 ratio rather than a 2:1 ratio originally thought. Kinetic analysis based on a derived three-stage model extracted activation energies of perovskite construction and anion exchange. This model is applicable to the growth of PbI2 reacting with a mixed solution of MABr and MAI. Two guidelines of fabricating single-phase MAPbBr x I3-x with predictable stoichiometry thus developed help strategizing protocols to reproducibly fabricate mixed-halide perovskite films tailored to specific optoelectronic applications.
ABSTRACT
A multifunctional ion-sensitive floating gate Fin field-effect transistor (ISFGFinFET) for hydrogen and sodium detection is demonstrated. The ISFGFinFET comprises a FGFET and a sensing film, both of which are used to detect and improve sensitivity. The sensitivity of the ISFGFinFET can be adjusted by modulating the coupling effect of the FG. A nanoseaweed structure is fabricated via glancing angle deposition (GLAD) technology to obtain a large sensing area to enhance the sensitivity for hydrogen ion detection. A sensitivity of 266 mV per pH can be obtained using a surface area of 3.28 mm2 . In terms of sodium ion detection, a calix[4]arene sensing film to monitor sodium ions, obtaining a Na+ sensitivity of 432.7 mV per pNa, is used. In addition, the ISFGFinFET demonstrates the functionality of multiple ions detection simultaneously. The sensor arrays composed of 3 × 3 pixels are demonstrated, each of which comprise of an FGFET sensor and a transistor. Furthermore, 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated. The performance of the proposed ISFGFinFET is competitive with that of other state-of-the-art ion sensors.
Subject(s)
Biosensing Techniques , Transistors, Electronic , Biosensing Techniques/methods , Ions , TechnologyABSTRACT
This paper proposes the design of a vertical slot waveguide-based optical ring resonator on a silicon photonic platform with minimized polarization mode dispersion (PMD) in the presence of waveguide dispersion over a wide band. Slot waveguides provide more degrees of freedom in the design, thereby achieving the minimum PMD over the communication wavelengths. The minimum PMD leads to nearly identical accumulated phase in the optical ring resonator for quasi-TE and TM modes, and thus the resonant wavelength mismatch between the quasi-TE and TM modes can be minimized from 1510 to 1590 nm.
ABSTRACT
UNLABELLED: The successful application of a Ni/Au transparent electrode for fabricating efficient perovskite-based solar cells is demonstrated. Through interdiffusion of the Ni/Au bilayer, Au forms an interconnected metallic network structure as the transparent electrode. Ni diffuses to the bilayer surface and oxidizes into NiOx becoming an appropriate electrode interlayer. These ITO- and PEDOT: PSS-free devices have potential applications in the design of future cost-effective, low-weight, and stable solar cells.
ABSTRACT
Thermal curing of the styrene-functionalized 9,9-diarylfluorene-based triaryldiamine monomer (VB-DAAF) forms an ideal p-type organic electrode interlayer capable of resisting solvation of the polar precursor solution in fabricating methylammonium lead iodide (CH3NH3PbI3) perovskite/fullerene (C60) planar heterojunction hybrid solar cells. The polymerized VB-DAAF film exhibits a good energy level alignment with the valence-band-edge level of the CH3NH3PbI3 perovskite to facilitate the transport of holes. The large energy barrier to the conduction-band-edge level of the CH3NH3PbI3 perovskite effectively blocks electrons from reaching the positive electrode and reduces the photon energy loss due to recombination. The best-performing cell with the configuration of glass/indium-tin oxide/polymerized VB-DAAF/CH3NH3PbI3 perovskite/C60/bathocuproine/aluminum is free of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT: PSS) layer to achieve an open-circuit voltage (VOC) = 1.02 V, a short-circuit current (JSC) = 18.92 mA/cm(2), and a fill factor (FF) = 0.78, corresponding to a power conversion efficiency (PCE) of 15.17% under standard 1 sun AM 1.5G simulated solar irradiation. The performance is much superior to the device applying the PEDOT: PSS interlayer with photovoltaic parameters of VOC = 0.85 V, JSC = 16.37 mA/cm(2), and FF = 0.74, corresponding to a PCE of 10.27%. Additionally, we had applied a UV-assisted process to polymerize the VB-DAAF film at relatively lower temperature and fabricate decent perovskite-based solar cells on the flexible substrate for real applications.
ABSTRACT
This study successfully demonstrates the application of inorganic p-type nickel oxide (NiOx ) as electrode interlayer for the fabrication of NiOx /CH3 NH3 PbI3 perovskite/PCBM PHJ hybrid solar cells with a respectable solar-to-electrical PCE of 7.8%. The better energy level alignment and improved wetting of the NiOx electrode interlayer significantly enhance the overall photovoltaic performance.
